IC compatible planar inductors on silicon

Hannu Ronkainen, Hannu Kattelus, Esa Tarvainen, Tarja Riihisaari, Mikael Andersson, Pekka Kuivalainen

    Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

    32 Citations (Scopus)

    Abstract

    The authors present a systematic study of the modelling, design, and fabrication of planar spiral inductors implemented in a high speed 0.8 μm BiCMOS technology, and characterised for use in portable VHF applications, Both a fully empirical distributed equivalent circuit model and a more accurate semiempirical model for the integrated inductors have been developed and tested. The latter broadband model is scalable and thus applicable also for inductor design. The IC compatible inductors on silicon were fabricated using a process featuring oxide isolation and two layers of metal. For comparison, some test inductors were also fabricated using nonstandard techniques such as 4 μm thick oxides and 4 μm thick Al metallisation. The rectangular spiral inductors showed larger Q values than the octagonal ones. The largest Q value measured was 16. As expected, this value was obtained by using a combination of thick oxide and thick metallisation. The results are encouraging for the use of integrated inductors in silicon RF ICs in the GHz frequency range.
    Original languageEnglish
    Pages (from-to)29-35
    JournalIEE Proceedings, Part G: Circuits, Devices and Systems
    Volume144
    Issue number1
    DOIs
    Publication statusPublished - Feb 1997
    MoE publication typeA4 Article in a conference publication

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  • Cite this

    Ronkainen, H., Kattelus, H., Tarvainen, E., Riihisaari, T., Andersson, M., & Kuivalainen, P. (1997). IC compatible planar inductors on silicon. IEE Proceedings, Part G: Circuits, Devices and Systems, 144(1), 29-35. https://doi.org/10.1049/ip-cds:19970748