Idenfication of vacancy charge states in diffusion of arsenic in germanium

E. Vainonen-Ahlgren, T. Ahlgren (Corresponding Author), Jari Likonen, S. Lehto, J. Keinonen, W. Li, J. Haapamaa

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    Abstract

    Diffusion of As into Ge from a GaAs overlayer deposited on p-type Ge substrates has been studied by means of secondary ion mass spectrometry. A concentration-dependent diffusion of As atoms was observed in addition to the concentration-independent diffusion of Ga and As atoms. The concentration dependence is explained by a Fermi-level-dependent diffusion model. Arsenic atoms are shown to diffuse through Ge vacancies with the charge states 2− and 0. No presence of the singly negatively charged vacancies was observed, indicating that Ge vacancy could be a negative U center.
    Original languageEnglish
    Pages (from-to)690 - 692
    Number of pages3
    JournalApplied Physics Letters
    Volume77
    Issue number5
    DOIs
    Publication statusPublished - 2000
    MoE publication typeA1 Journal article-refereed

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    Vainonen-Ahlgren, E., Ahlgren, T., Likonen, J., Lehto, S., Keinonen, J., Li, W., & Haapamaa, J. (2000). Idenfication of vacancy charge states in diffusion of arsenic in germanium. Applied Physics Letters, 77(5), 690 - 692. https://doi.org/10.1063/1.127087