Idenfication of vacancy charge states in diffusion of arsenic in germanium

E. Vainonen-Ahlgren, T. Ahlgren (Corresponding Author), Jari Likonen, S. Lehto, J. Keinonen, W. Li, J. Haapamaa

Research output: Contribution to journalArticleScientificpeer-review

21 Citations (Scopus)

Abstract

Diffusion of As into Ge from a GaAs overlayer deposited on p-type Ge substrates has been studied by means of secondary ion mass spectrometry. A concentration-dependent diffusion of As atoms was observed in addition to the concentration-independent diffusion of Ga and As atoms. The concentration dependence is explained by a Fermi-level-dependent diffusion model. Arsenic atoms are shown to diffuse through Ge vacancies with the charge states 2− and 0. No presence of the singly negatively charged vacancies was observed, indicating that Ge vacancy could be a negative U center.
Original languageEnglish
Pages (from-to)690 - 692
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number5
DOIs
Publication statusPublished - 2000
MoE publication typeA1 Journal article-refereed

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arsenic
germanium
atoms
secondary ion mass spectrometry

Cite this

Vainonen-Ahlgren, E., Ahlgren, T., Likonen, J., Lehto, S., Keinonen, J., Li, W., & Haapamaa, J. (2000). Idenfication of vacancy charge states in diffusion of arsenic in germanium. Applied Physics Letters, 77(5), 690 - 692. https://doi.org/10.1063/1.127087
Vainonen-Ahlgren, E. ; Ahlgren, T. ; Likonen, Jari ; Lehto, S. ; Keinonen, J. ; Li, W. ; Haapamaa, J. / Idenfication of vacancy charge states in diffusion of arsenic in germanium. In: Applied Physics Letters. 2000 ; Vol. 77, No. 5. pp. 690 - 692.
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abstract = "Diffusion of As into Ge from a GaAs overlayer deposited on p-type Ge substrates has been studied by means of secondary ion mass spectrometry. A concentration-dependent diffusion of As atoms was observed in addition to the concentration-independent diffusion of Ga and As atoms. The concentration dependence is explained by a Fermi-level-dependent diffusion model. Arsenic atoms are shown to diffuse through Ge vacancies with the charge states 2− and 0. No presence of the singly negatively charged vacancies was observed, indicating that Ge vacancy could be a negative U center.",
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Vainonen-Ahlgren, E, Ahlgren, T, Likonen, J, Lehto, S, Keinonen, J, Li, W & Haapamaa, J 2000, 'Idenfication of vacancy charge states in diffusion of arsenic in germanium', Applied Physics Letters, vol. 77, no. 5, pp. 690 - 692. https://doi.org/10.1063/1.127087

Idenfication of vacancy charge states in diffusion of arsenic in germanium. / Vainonen-Ahlgren, E.; Ahlgren, T. (Corresponding Author); Likonen, Jari; Lehto, S.; Keinonen, J.; Li, W.; Haapamaa, J.

In: Applied Physics Letters, Vol. 77, No. 5, 2000, p. 690 - 692.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Vainonen-Ahlgren, E.

AU - Ahlgren, T.

AU - Likonen, Jari

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AU - Keinonen, J.

AU - Li, W.

AU - Haapamaa, J.

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AB - Diffusion of As into Ge from a GaAs overlayer deposited on p-type Ge substrates has been studied by means of secondary ion mass spectrometry. A concentration-dependent diffusion of As atoms was observed in addition to the concentration-independent diffusion of Ga and As atoms. The concentration dependence is explained by a Fermi-level-dependent diffusion model. Arsenic atoms are shown to diffuse through Ge vacancies with the charge states 2− and 0. No presence of the singly negatively charged vacancies was observed, indicating that Ge vacancy could be a negative U center.

U2 - 10.1063/1.127087

DO - 10.1063/1.127087

M3 - Article

VL - 77

SP - 690

EP - 692

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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