Idenfication of vacancy charge states in diffusion of arsenic in germanium

E. Vainonen-Ahlgren; T. Ahlgren; Jari Likonen; S. Lehto; J. Keinonen; W. Li; J. Haapamaa

doi:10.1063/1.127087

Idenfication of vacancy charge states in diffusion of arsenic in germanium

E. Vainonen-Ahlgren
, T. Ahlgren^*
, Jari Likonen
, S. Lehto
, J. Keinonen
, W. Li
, J. Haapamaa

^*Corresponding author for this work

University of Helsinki
VTT (former employee or external)
Tampere University of Technology (TUT)

Research output: Contribution to journal › Article › Scientific › peer-review

27 Citations (Scopus)

Abstract

Diffusion of As into Ge from a GaAs overlayer deposited on p-type Ge substrates has been studied by means of secondary ion mass spectrometry. A concentration-dependent diffusion of As atoms was observed in addition to the concentration-independent diffusion of Ga and As atoms. The concentration dependence is explained by a Fermi-level-dependent diffusion model. Arsenic atoms are shown to diffuse through Ge vacancies with the charge states 2− and 0. No presence of the singly negatively charged vacancies was observed, indicating that Ge vacancy could be a negative U center.

Original language	English
Pages (from-to)	690 - 692
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	5
DOIs	https://doi.org/10.1063/1.127087
Publication status	Published - 2000
MoE publication type	A1 Journal article-refereed

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10.1063/1.127087

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title = "Idenfication of vacancy charge states in diffusion of arsenic in germanium",

abstract = "Diffusion of As into Ge from a GaAs overlayer deposited on p-type Ge substrates has been studied by means of secondary ion mass spectrometry. A concentration-dependent diffusion of As atoms was observed in addition to the concentration-independent diffusion of Ga and As atoms. The concentration dependence is explained by a Fermi-level-dependent diffusion model. Arsenic atoms are shown to diffuse through Ge vacancies with the charge states 2− and 0. No presence of the singly negatively charged vacancies was observed, indicating that Ge vacancy could be a negative U center.",

author = "E. Vainonen-Ahlgren and T. Ahlgren and Jari Likonen and S. Lehto and J. Keinonen and W. Li and J. Haapamaa",

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T1 - Idenfication of vacancy charge states in diffusion of arsenic in germanium

AU - Vainonen-Ahlgren, E.

AU - Ahlgren, T.

AU - Likonen, Jari

AU - Lehto, S.

AU - Keinonen, J.

AU - Li, W.

AU - Haapamaa, J.

PY - 2000

Y1 - 2000

N2 - Diffusion of As into Ge from a GaAs overlayer deposited on p-type Ge substrates has been studied by means of secondary ion mass spectrometry. A concentration-dependent diffusion of As atoms was observed in addition to the concentration-independent diffusion of Ga and As atoms. The concentration dependence is explained by a Fermi-level-dependent diffusion model. Arsenic atoms are shown to diffuse through Ge vacancies with the charge states 2− and 0. No presence of the singly negatively charged vacancies was observed, indicating that Ge vacancy could be a negative U center.

AB - Diffusion of As into Ge from a GaAs overlayer deposited on p-type Ge substrates has been studied by means of secondary ion mass spectrometry. A concentration-dependent diffusion of As atoms was observed in addition to the concentration-independent diffusion of Ga and As atoms. The concentration dependence is explained by a Fermi-level-dependent diffusion model. Arsenic atoms are shown to diffuse through Ge vacancies with the charge states 2− and 0. No presence of the singly negatively charged vacancies was observed, indicating that Ge vacancy could be a negative U center.

U2 - 10.1063/1.127087

DO - 10.1063/1.127087

M3 - Article

SN - 0003-6951

VL - 77

SP - 690

EP - 692

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Idenfication of vacancy charge states in diffusion of arsenic in germanium

Abstract

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