Ex situ tunnel junction process technique characterized by Coulomb blockade thermometry

Mika Prunnila, M. Meschke, David Gunnarsson, S. Enouz-Vedrenne, J.M. Kivioja, J.P. Pekola

    Research output: Contribution to journalArticleScientificpeer-review

    13 Citations (Scopus)

    Abstract

    The authors investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom Al electrode defines the tunnel junction area. The ex situ tunnel barrier is formed by oxidation of the bottom electrode in the junction area. Room temperature resistance mapping over a 150 mm wafer gives local deviation values of the tunnel junction resistance that fall below 7.5% with an average of 1.3%. The deviation is further investigated by sub-1 K measurements of a device, which has one tunnel junction connected to four arrays consisting of N junctions (N=41, junction diameter 700 nm). The differential conductance is measured in single-junction and array Coulomb blockade thermometer operation modes. By fitting the experimental data to the theoretical models, the authors found an upper limit for the local tunnel junction resistance deviation of ∼5% for the array of 2N+1 junctions. This value is of the same order as the minimum detectable deviation defined by the accuracy of the authors’ experimental setup.
    Original languageEnglish
    Pages (from-to)1026-1029
    Number of pages4
    JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
    Volume28
    Issue number5
    DOIs
    Publication statusPublished - 2010
    MoE publication typeA1 Journal article-refereed

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    Coulomb blockade
    Tunnel junctions
    Electrodes
    Thermometers
    Tunnels
    Plasmas
    Fabrication
    Oxidation

    Cite this

    Prunnila, Mika ; Meschke, M. ; Gunnarsson, David ; Enouz-Vedrenne, S. ; Kivioja, J.M. ; Pekola, J.P. / Ex situ tunnel junction process technique characterized by Coulomb blockade thermometry. In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 2010 ; Vol. 28, No. 5. pp. 1026-1029.
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    title = "Ex situ tunnel junction process technique characterized by Coulomb blockade thermometry",
    abstract = "The authors investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom Al electrode defines the tunnel junction area. The ex situ tunnel barrier is formed by oxidation of the bottom electrode in the junction area. Room temperature resistance mapping over a 150 mm wafer gives local deviation values of the tunnel junction resistance that fall below 7.5{\%} with an average of 1.3{\%}. The deviation is further investigated by sub-1 K measurements of a device, which has one tunnel junction connected to four arrays consisting of N junctions (N=41, junction diameter 700 nm). The differential conductance is measured in single-junction and array Coulomb blockade thermometer operation modes. By fitting the experimental data to the theoretical models, the authors found an upper limit for the local tunnel junction resistance deviation of ∼5{\%} for the array of 2N+1 junctions. This value is of the same order as the minimum detectable deviation defined by the accuracy of the authors’ experimental setup.",
    author = "Mika Prunnila and M. Meschke and David Gunnarsson and S. Enouz-Vedrenne and J.M. Kivioja and J.P. Pekola",
    year = "2010",
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    Ex situ tunnel junction process technique characterized by Coulomb blockade thermometry. / Prunnila, Mika; Meschke, M.; Gunnarsson, David; Enouz-Vedrenne, S.; Kivioja, J.M.; Pekola, J.P.

    In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 28, No. 5, 2010, p. 1026-1029.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Ex situ tunnel junction process technique characterized by Coulomb blockade thermometry

    AU - Prunnila, Mika

    AU - Meschke, M.

    AU - Gunnarsson, David

    AU - Enouz-Vedrenne, S.

    AU - Kivioja, J.M.

    AU - Pekola, J.P.

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    AB - The authors investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom Al electrode defines the tunnel junction area. The ex situ tunnel barrier is formed by oxidation of the bottom electrode in the junction area. Room temperature resistance mapping over a 150 mm wafer gives local deviation values of the tunnel junction resistance that fall below 7.5% with an average of 1.3%. The deviation is further investigated by sub-1 K measurements of a device, which has one tunnel junction connected to four arrays consisting of N junctions (N=41, junction diameter 700 nm). The differential conductance is measured in single-junction and array Coulomb blockade thermometer operation modes. By fitting the experimental data to the theoretical models, the authors found an upper limit for the local tunnel junction resistance deviation of ∼5% for the array of 2N+1 junctions. This value is of the same order as the minimum detectable deviation defined by the accuracy of the authors’ experimental setup.

    U2 - 10.1116/1.3490406

    DO - 10.1116/1.3490406

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    JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

    JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

    SN - 2166-2746

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    ER -