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Impact ionization in silicon at low charge-carrier energies
Mikhail Korpusenko
*
, Anna Vaskuri
, Farshid Manoocheri
, Erkki Ikonen
*
Corresponding author for this work
Aalto University
European Organization for Nuclear Research (CERN)
Research output
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Article
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Scientific
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peer-review
2
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INIS
energy
100%
silicon
100%
ionization
100%
charge carriers
100%
yields
80%
photons
80%
losses
40%
values
20%
comparative evaluations
20%
efficiency
20%
data
20%
electrons
20%
conversion
20%
asymptotic solutions
20%
wavelengths
20%
extrapolation
20%
crystals
20%
curves
20%
probability
20%
recombination
20%
junctions
20%
photodiodes
20%
photocurrents
20%
energy range
20%
electron holes
20%
Keyphrases
Charge Carriers
100%
Quantum Yield
100%
Low Charge
100%
Impact Ionization
100%
Recombination
25%
Predictable Quantum Efficient Detector
25%
Induced Junction
25%
Photodiode
25%
Photocurrent
25%
Yield Value
25%
Low Energy
25%
Energy Range
25%
Silicon Crystal
25%
Extrapolation Model
25%
Electron-hole Pair
25%
Carrier Loss
25%
Silicon Lattice
25%
Ionization Probability
25%
Free Charge Carriers
25%
Photon-to-electron Conversion Efficiency
25%
Ionization Yield
25%
Photon Loss
25%
Physics
Photodiode
100%
Photoelectric Emission
100%
Holes (Electron Deficiencies)
100%
Reflectance
100%
Engineering
Impact Ionization
100%
Charge Carrier
100%
Quantum Yield
80%
Conversion Efficiency
20%
Photodiode
20%
Photocurrent
20%
Hole Pair
20%
Reflectance
20%