Implementation experiments of analog nonvolatile memory with a standard 0.35 μm CMOS

Arto Rantala; Matti Sopanen; Markku Åberg

doi:10.1109/NORCHP.2004.1423825

Implementation experiments of analog nonvolatile memory with a standard 0.35 μm CMOS

Arto Rantala, Matti Sopanen, Markku Åberg

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

This paper presents a study upon implementation of a nonvolatile memory with a standard CMOS process. The main emphasis is to obtain an analog, continuous value, EEPROM module. The accuracy, reliability and reproducibility performance of the different memory cells have been investigated. Different types of programming method have been tested and compared EEPROM cells have been processed with two different 0.35 μm CMOS processes and two different process runs. Measurement results show that a reliable, medium accuracy, analog EEPROM can be implemented without any process Modifications.

Original language	English
Title of host publication	Proceedings of the 22nd Norchip Conference 2004
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	71-74
ISBN (Print)	978-0-7803-8510-8
DOIs	https://doi.org/10.1109/NORCHP.2004.1423825
Publication status	Published - 2004
MoE publication type	A4 Article in a conference publication
Event	22nd NORCHIP Conference - Oslo, Norway Duration: 8 Nov 2004 → 9 Nov 2004

Conference

Conference	22nd NORCHIP Conference
Country/Territory	Norway
City	Oslo
Period	8/11/04 → 9/11/04

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10.1109/NORCHP.2004.1423825

Cite this

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title = "Implementation experiments of analog nonvolatile memory with a standard 0.35 μm CMOS",

abstract = "This paper presents a study upon implementation of a nonvolatile memory with a standard CMOS process. The main emphasis is to obtain an analog, continuous value, EEPROM module. The accuracy, reliability and reproducibility performance of the different memory cells have been investigated. Different types of programming method have been tested and compared EEPROM cells have been processed with two different 0.35 μm CMOS processes and two different process runs. Measurement results show that a reliable, medium accuracy, analog EEPROM can be implemented without any process Modifications. ",

author = "Arto Rantala and Matti Sopanen and Markku {\AA}berg",

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doi = "10.1109/NORCHP.2004.1423825",

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pages = "71--74",

booktitle = "Proceedings of the 22nd Norchip Conference 2004",

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address = "United States",

note = "22nd NORCHIP Conference ; Conference date: 08-11-2004 Through 09-11-2004",

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Implementation experiments of analog nonvolatile memory with a standard 0.35 μm CMOS. / Rantala, Arto; Sopanen, Matti; Åberg, Markku.
Proceedings of the 22nd Norchip Conference 2004. IEEE Institute of Electrical and Electronic Engineers, 2004. p. 71-74.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Implementation experiments of analog nonvolatile memory with a standard 0.35 μm CMOS

AU - Rantala, Arto

AU - Sopanen, Matti

AU - Åberg, Markku

PY - 2004

Y1 - 2004

N2 - This paper presents a study upon implementation of a nonvolatile memory with a standard CMOS process. The main emphasis is to obtain an analog, continuous value, EEPROM module. The accuracy, reliability and reproducibility performance of the different memory cells have been investigated. Different types of programming method have been tested and compared EEPROM cells have been processed with two different 0.35 μm CMOS processes and two different process runs. Measurement results show that a reliable, medium accuracy, analog EEPROM can be implemented without any process Modifications.

AB - This paper presents a study upon implementation of a nonvolatile memory with a standard CMOS process. The main emphasis is to obtain an analog, continuous value, EEPROM module. The accuracy, reliability and reproducibility performance of the different memory cells have been investigated. Different types of programming method have been tested and compared EEPROM cells have been processed with two different 0.35 μm CMOS processes and two different process runs. Measurement results show that a reliable, medium accuracy, analog EEPROM can be implemented without any process Modifications.

U2 - 10.1109/NORCHP.2004.1423825

DO - 10.1109/NORCHP.2004.1423825

M3 - Conference article in proceedings

SN - 978-0-7803-8510-8

SP - 71

EP - 74

BT - Proceedings of the 22nd Norchip Conference 2004

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 22nd NORCHIP Conference

Y2 - 8 November 2004 through 9 November 2004

ER -

Implementation experiments of analog nonvolatile memory with a standard 0.35 μm CMOS

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