Implementation of a Memristor-Based Solid-State Memcapacitive Device

Jacek Flak; Arto Rantala; Tomi Haatainen; Mika Prunnila; Mika Laiho

doi:10.1109/CNNA.2014.6888633

Implementation of a Memristor-Based Solid-State Memcapacitive Device

Jacek Flak, Arto Rantala, Tomi Haatainen, Mika Prunnila, Mika Laiho

University of Turku

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Memcapacitor is a new type of circiut element which can be useful in a wide range of applications including memory, tunable analog circuits, and analog neural networks. It can be realized as a micro- or nanoscale solid-state device, possibly implemented within (or post-processed on top of) a CMOS chip. The approach based on combination of a memristor and a typical MIM capacitor is promising as it can benefit from the fabrication techniques being developed and used for memristors. These techniques are rapidly maturing, enabling large capacity resistive memory (ReRAM) chips. However, the memristor-based memcapacitors will require more complex techniques for their programming than memristors, because their impedance is frequency dependent and the parasitics induced by direct access to the middle electrode may potentially disable some applications

Original language	English
Title of host publication	14th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA 2014)
Publisher	IEEE Institute of Electrical and Electronic Engineers
Number of pages	2
ISBN (Electronic)	978-1-4799-6007-1
DOIs	https://doi.org/10.1109/CNNA.2014.6888633
Publication status	Published - 2014
MoE publication type	A4 Article in a conference publication
Event	14th International Workshop on Cellular Nanoscale Networks and their Applications, CNNA 2014 - Notre Dame, IN, United States Duration: 29 Jul 2014 → 31 Jul 2014 Conference number: 14th

Workshop

Workshop	14th International Workshop on Cellular Nanoscale Networks and their Applications, CNNA 2014
Abbreviated title	CNNA 2014
Country/Territory	United States
City	Notre Dame, IN
Period	29/07/14 → 31/07/14

Keywords

capacitance
memristors
electrodes
resistance
fabrication
MIM capacitors
nonvolatile memory

Access to Document

10.1109/CNNA.2014.6888633

Cite this

@inproceedings{bf9f9b825ee547efad5c0a0a992a4682,

title = "Implementation of a Memristor-Based Solid-State Memcapacitive Device",

abstract = "Memcapacitor is a new type of circiut element which can be useful in a wide range of applications including memory, tunable analog circuits, and analog neural networks. It can be realized as a micro- or nanoscale solid-state device, possibly implemented within (or post-processed on top of) a CMOS chip. The approach based on combination of a memristor and a typical MIM capacitor is promising as it can benefit from the fabrication techniques being developed and used for memristors. These techniques are rapidly maturing, enabling large capacity resistive memory (ReRAM) chips. However, the memristor-based memcapacitors will require more complex techniques for their programming than memristors, because their impedance is frequency dependent and the parasitics induced by direct access to the middle electrode may potentially disable some applications",

keywords = "capacitance, memristors, electrodes, resistance, fabrication, MIM capacitors, nonvolatile memory",

author = "Jacek Flak and Arto Rantala and Tomi Haatainen and Mika Prunnila and Mika Laiho",

note = "Project code: 70824; 14th International Workshop on Cellular Nanoscale Networks and their Applications, CNNA 2014, CNNA 2014 ; Conference date: 29-07-2014 Through 31-07-2014",

year = "2014",

doi = "10.1109/CNNA.2014.6888633",

language = "English",

booktitle = "14th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA 2014)",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Flak, J , Rantala, A , Haatainen, T , Prunnila, M & Laiho, M 2014, Implementation of a Memristor-Based Solid-State Memcapacitive Device. in 14th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA 2014). IEEE Institute of Electrical and Electronic Engineers, 14th International Workshop on Cellular Nanoscale Networks and their Applications, CNNA 2014, Notre Dame, IN, United States, 29/07/14. https://doi.org/10.1109/CNNA.2014.6888633

Implementation of a Memristor-Based Solid-State Memcapacitive Device. / Flak, Jacek ; Rantala, Arto ; Haatainen, Tomi et al.
14th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA 2014). IEEE Institute of Electrical and Electronic Engineers, 2014.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Implementation of a Memristor-Based Solid-State Memcapacitive Device

AU - Flak, Jacek

AU - Rantala, Arto

AU - Haatainen, Tomi

AU - Prunnila, Mika

AU - Laiho, Mika

N1 - Conference code: 14th

PY - 2014

Y1 - 2014

N2 - Memcapacitor is a new type of circiut element which can be useful in a wide range of applications including memory, tunable analog circuits, and analog neural networks. It can be realized as a micro- or nanoscale solid-state device, possibly implemented within (or post-processed on top of) a CMOS chip. The approach based on combination of a memristor and a typical MIM capacitor is promising as it can benefit from the fabrication techniques being developed and used for memristors. These techniques are rapidly maturing, enabling large capacity resistive memory (ReRAM) chips. However, the memristor-based memcapacitors will require more complex techniques for their programming than memristors, because their impedance is frequency dependent and the parasitics induced by direct access to the middle electrode may potentially disable some applications

AB - Memcapacitor is a new type of circiut element which can be useful in a wide range of applications including memory, tunable analog circuits, and analog neural networks. It can be realized as a micro- or nanoscale solid-state device, possibly implemented within (or post-processed on top of) a CMOS chip. The approach based on combination of a memristor and a typical MIM capacitor is promising as it can benefit from the fabrication techniques being developed and used for memristors. These techniques are rapidly maturing, enabling large capacity resistive memory (ReRAM) chips. However, the memristor-based memcapacitors will require more complex techniques for their programming than memristors, because their impedance is frequency dependent and the parasitics induced by direct access to the middle electrode may potentially disable some applications

KW - capacitance

KW - memristors

KW - electrodes

KW - resistance

KW - fabrication

KW - MIM capacitors

KW - nonvolatile memory

U2 - 10.1109/CNNA.2014.6888633

DO - 10.1109/CNNA.2014.6888633

M3 - Conference article in proceedings

BT - 14th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA 2014)

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 14th International Workshop on Cellular Nanoscale Networks and their Applications, CNNA 2014

Y2 - 29 July 2014 through 31 July 2014

ER -

Implementation of a Memristor-Based Solid-State Memcapacitive Device

Abstract

Workshop

Keywords

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Cite this