Implementing ALD layers in MEMS processing

R. L. Puurunen; J. Saarilahti; H. Kattelus

doi:10.1149/1.2779063

Implementing ALD layers in MEMS processing

R. L. Puurunen, J. Saarilahti, H. Kattelus

Research output: Contribution to journal › Article › Scientific › peer-review

104 Citations (Scopus)

Abstract

Layers manufactured by the ALD technique have many interesting applications in microelectromechanical systems (MEMS), for example as protective layers for biocompatible coating, high-dielectric-constant layers, or low-temperature conformal insulating layers. Before an ALD process can be successfully implemented in MEMS processing, several practical issues have to be solved, starting from patterning the layers and characterizing their behaviour in various chemical and thermal environments. Stress issues may not be forgotten We have recently implemented two ALD processes, namely the trimethy laluminium/water process to deposit Al₂O₃ and the titanium tetrachloride/water process to deposit TiO₂ in our MEMS processing line and carried out the necessary characterization, details of which are reported here. For us, ALD has been a truly enabling technology in the processing of a three-dimensional micromechanical compass based on the Lorentz force, where Al₂O₃ acted as a pinhole-free electrical insulation grown at low temperature

Original language	English
Pages (from-to)	3-14
Number of pages	12
Journal	ECS Transactions
Volume	11
Issue number	7
DOIs	https://doi.org/10.1149/1.2779063
Publication status	Published - 1 Dec 2007
MoE publication type	Not Eligible
Event	3rd Symposium on Atomic Layer Deposition Applications - 212th ECS Meeting - Washington, DC, United States Duration: 8 Oct 2007 → 9 Oct 2007

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Implementing ALD layers in MEMS processing

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