Abstract
Layers manufactured by the ALD technique have many interesting applications in microelectromechanical systems (MEMS), for example as protective layers for biocompatible coating, high-dielectric-constant layers, or low-temperature conformal insulating layers. Before an ALD process can be successfully implemented in MEMS processing, several practical issues have to be solved, starting from patterning the layers and characterizing their behaviour in various chemical and thermal environments. Stress issues may not be forgotten We have recently implemented two ALD processes, namely the trimethy laluminium/water process to deposit Al2O3 and the titanium tetrachloride/water process to deposit TiO2 in our MEMS processing line and carried out the necessary characterization, details of which are reported here. For us, ALD has been a truly enabling technology in the processing of a three-dimensional micromechanical compass based on the Lorentz force, where Al2O3 acted as a pinhole-free electrical insulation grown at low temperature
| Original language | English |
|---|---|
| Pages (from-to) | 3-14 |
| Number of pages | 12 |
| Journal | ECS Transactions |
| Volume | 11 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1 Dec 2007 |
| MoE publication type | Not Eligible |
| Event | 3rd Symposium on Atomic Layer Deposition Applications - 212th ECS Meeting - Washington, DC, United States Duration: 8 Oct 2007 → 9 Oct 2007 |
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Implementing ALD layers in MEMS processing. / Puurunen, R. L.; Saarilahti, J.; Kattelus, H.
In: ECS Transactions, Vol. 11, No. 7, 01.12.2007, p. 3-14.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Implementing ALD layers in MEMS processing
AU - Puurunen, R. L.
AU - Saarilahti, J.
AU - Kattelus, H.
PY - 2007/12/1
Y1 - 2007/12/1
N2 - Layers manufactured by the ALD technique have many interesting applications in microelectromechanical systems (MEMS), for example as protective layers for biocompatible coating, high-dielectric-constant layers, or low-temperature conformal insulating layers. Before an ALD process can be successfully implemented in MEMS processing, several practical issues have to be solved, starting from patterning the layers and characterizing their behaviour in various chemical and thermal environments. Stress issues may not be forgotten We have recently implemented two ALD processes, namely the trimethy laluminium/water process to deposit Al2O3 and the titanium tetrachloride/water process to deposit TiO2 in our MEMS processing line and carried out the necessary characterization, details of which are reported here. For us, ALD has been a truly enabling technology in the processing of a three-dimensional micromechanical compass based on the Lorentz force, where Al2O3 acted as a pinhole-free electrical insulation grown at low temperature
AB - Layers manufactured by the ALD technique have many interesting applications in microelectromechanical systems (MEMS), for example as protective layers for biocompatible coating, high-dielectric-constant layers, or low-temperature conformal insulating layers. Before an ALD process can be successfully implemented in MEMS processing, several practical issues have to be solved, starting from patterning the layers and characterizing their behaviour in various chemical and thermal environments. Stress issues may not be forgotten We have recently implemented two ALD processes, namely the trimethy laluminium/water process to deposit Al2O3 and the titanium tetrachloride/water process to deposit TiO2 in our MEMS processing line and carried out the necessary characterization, details of which are reported here. For us, ALD has been a truly enabling technology in the processing of a three-dimensional micromechanical compass based on the Lorentz force, where Al2O3 acted as a pinhole-free electrical insulation grown at low temperature
UR - http://www.scopus.com/inward/record.url?scp=45249115332&partnerID=8YFLogxK
U2 - 10.1149/1.2779063
DO - 10.1149/1.2779063
M3 - Article
VL - 11
SP - 3
EP - 14
JO - ECS Transactions
JF - ECS Transactions
SN - 1938-5862
IS - 7
ER -