Implementing ALD layers in MEMS processing

R. L. Puurunen; J. Saarilahti; H. Kattelus

doi:10.1149/1.2779063

Implementing ALD layers in MEMS processing

R. L. Puurunen, J. Saarilahti, H. Kattelus

Research output: Contribution to journal › Article › Scientific › peer-review

100 Citations (Scopus)

Abstract

Layers manufactured by the ALD technique have many interesting applications in microelectromechanical systems (MEMS), for example as protective layers for biocompatible coating, high-dielectric-constant layers, or low-temperature conformal insulating layers. Before an ALD process can be successfully implemented in MEMS processing, several practical issues have to be solved, starting from patterning the layers and characterizing their behaviour in various chemical and thermal environments. Stress issues may not be forgotten We have recently implemented two ALD processes, namely the trimethy laluminium/water process to deposit Al₂O₃ and the titanium tetrachloride/water process to deposit TiO₂ in our MEMS processing line and carried out the necessary characterization, details of which are reported here. For us, ALD has been a truly enabling technology in the processing of a three-dimensional micromechanical compass based on the Lorentz force, where Al₂O₃ acted as a pinhole-free electrical insulation grown at low temperature

Original language	English
Pages (from-to)	3-14
Number of pages	12
Journal	ECS Transactions
Volume	11
Issue number	7
DOIs	https://doi.org/10.1149/1.2779063
Publication status	Published - 1 Dec 2007
MoE publication type	Not Eligible
Event	3rd Symposium on Atomic Layer Deposition Applications - 212th ECS Meeting - Washington, DC, United States Duration: 8 Oct 2007 → 9 Oct 2007

Access to Document

10.1149/1.2779063

Fingerprint Dive into the research topics of 'Implementing ALD layers in MEMS processing'. Together they form a unique fingerprint.

Cite this

@article{a246d4a3633f4399aaa98b88b2b1e658,

title = "Implementing ALD layers in MEMS processing",

abstract = "Layers manufactured by the ALD technique have many interesting applications in microelectromechanical systems (MEMS), for example as protective layers for biocompatible coating, high-dielectric-constant layers, or low-temperature conformal insulating layers. Before an ALD process can be successfully implemented in MEMS processing, several practical issues have to be solved, starting from patterning the layers and characterizing their behaviour in various chemical and thermal environments. Stress issues may not be forgotten We have recently implemented two ALD processes, namely the trimethy laluminium/water process to deposit Al2O3 and the titanium tetrachloride/water process to deposit TiO2 in our MEMS processing line and carried out the necessary characterization, details of which are reported here. For us, ALD has been a truly enabling technology in the processing of a three-dimensional micromechanical compass based on the Lorentz force, where Al2O3 acted as a pinhole-free electrical insulation grown at low temperature",

author = "Puurunen, {R. L.} and J. Saarilahti and H. Kattelus",

year = "2007",

month = dec,

day = "1",

doi = "10.1149/1.2779063",

language = "English",

volume = "11",

pages = "3--14",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society ECS",

number = "7",

note = "3rd Symposium on Atomic Layer Deposition Applications - 212th ECS Meeting ; Conference date: 08-10-2007 Through 09-10-2007",

}

TY - JOUR

T1 - Implementing ALD layers in MEMS processing

AU - Puurunen, R. L.

AU - Saarilahti, J.

AU - Kattelus, H.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Layers manufactured by the ALD technique have many interesting applications in microelectromechanical systems (MEMS), for example as protective layers for biocompatible coating, high-dielectric-constant layers, or low-temperature conformal insulating layers. Before an ALD process can be successfully implemented in MEMS processing, several practical issues have to be solved, starting from patterning the layers and characterizing their behaviour in various chemical and thermal environments. Stress issues may not be forgotten We have recently implemented two ALD processes, namely the trimethy laluminium/water process to deposit Al2O3 and the titanium tetrachloride/water process to deposit TiO2 in our MEMS processing line and carried out the necessary characterization, details of which are reported here. For us, ALD has been a truly enabling technology in the processing of a three-dimensional micromechanical compass based on the Lorentz force, where Al2O3 acted as a pinhole-free electrical insulation grown at low temperature

AB - Layers manufactured by the ALD technique have many interesting applications in microelectromechanical systems (MEMS), for example as protective layers for biocompatible coating, high-dielectric-constant layers, or low-temperature conformal insulating layers. Before an ALD process can be successfully implemented in MEMS processing, several practical issues have to be solved, starting from patterning the layers and characterizing their behaviour in various chemical and thermal environments. Stress issues may not be forgotten We have recently implemented two ALD processes, namely the trimethy laluminium/water process to deposit Al2O3 and the titanium tetrachloride/water process to deposit TiO2 in our MEMS processing line and carried out the necessary characterization, details of which are reported here. For us, ALD has been a truly enabling technology in the processing of a three-dimensional micromechanical compass based on the Lorentz force, where Al2O3 acted as a pinhole-free electrical insulation grown at low temperature

UR - http://www.scopus.com/inward/record.url?scp=45249115332&partnerID=8YFLogxK

U2 - 10.1149/1.2779063

DO - 10.1149/1.2779063

M3 - Article

C2 - 25246403

AN - SCOPUS:84912554793

VL - 11

SP - 3

EP - 14

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 7

T2 - 3rd Symposium on Atomic Layer Deposition Applications - 212th ECS Meeting

Y2 - 8 October 2007 through 9 October 2007

ER -

Implementing ALD layers in MEMS processing

Abstract

Access to Document

Other files and links

Cite this