Imprinted electrically conductive patterns from a polyaniline blend

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Abstract

Imprinting three-dimensional patterns directly into electrically conductive polymer blends is investigated. Silicon substrates are spin-coated by a polymethylmethacrylate/polyaniline-camphor sulfonic acid mixture dissolved in m-cresol. The patterns are imprinted using a silicon stamp having a 500 nm deep grating with 5 μm wide lines and spaces. The imprinting temperature was 140 °C, pressure 150 bar, and time 10 min. The conductivity of the blend was 1 S/cm prior to imprinting and decreased by a factor of about 2 in the process. Removing the residual film from the grooves by etching in argon/oxygen plasma results in resistance anisotropy larger than 104 perpendicular and parallel to the imprinted polymer ridges.
Original languageEnglish
Pages (from-to)487-489
Number of pages3
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume19
Issue number2
DOIs
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

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Polyaniline
Camphor
Silicon
Polymer blends
Argon
Etching
Anisotropy
Plasmas
Oxygen
Acids
Polymers
Substrates
Temperature

Cite this

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title = "Imprinted electrically conductive patterns from a polyaniline blend",
abstract = "Imprinting three-dimensional patterns directly into electrically conductive polymer blends is investigated. Silicon substrates are spin-coated by a polymethylmethacrylate/polyaniline-camphor sulfonic acid mixture dissolved in m-cresol. The patterns are imprinted using a silicon stamp having a 500 nm deep grating with 5 μm wide lines and spaces. The imprinting temperature was 140 °C, pressure 150 bar, and time 10 min. The conductivity of the blend was 1 S/cm prior to imprinting and decreased by a factor of about 2 in the process. Removing the residual film from the grooves by etching in argon/oxygen plasma results in resistance anisotropy larger than 104 perpendicular and parallel to the imprinted polymer ridges.",
author = "Tapio M{\"a}kel{\"a} and Tomi Haatainen and Jouni Ahopelto and Heikki Isotalo",
year = "2001",
doi = "10.1116/1.1354979",
language = "English",
volume = "19",
pages = "487--489",
journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",
issn = "2166-2746",
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}

Imprinted electrically conductive patterns from a polyaniline blend. / Mäkelä, Tapio; Haatainen, Tomi; Ahopelto, Jouni; Isotalo, Heikki.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 19, No. 2, 2001, p. 487-489.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Imprinted electrically conductive patterns from a polyaniline blend

AU - Mäkelä, Tapio

AU - Haatainen, Tomi

AU - Ahopelto, Jouni

AU - Isotalo, Heikki

PY - 2001

Y1 - 2001

N2 - Imprinting three-dimensional patterns directly into electrically conductive polymer blends is investigated. Silicon substrates are spin-coated by a polymethylmethacrylate/polyaniline-camphor sulfonic acid mixture dissolved in m-cresol. The patterns are imprinted using a silicon stamp having a 500 nm deep grating with 5 μm wide lines and spaces. The imprinting temperature was 140 °C, pressure 150 bar, and time 10 min. The conductivity of the blend was 1 S/cm prior to imprinting and decreased by a factor of about 2 in the process. Removing the residual film from the grooves by etching in argon/oxygen plasma results in resistance anisotropy larger than 104 perpendicular and parallel to the imprinted polymer ridges.

AB - Imprinting three-dimensional patterns directly into electrically conductive polymer blends is investigated. Silicon substrates are spin-coated by a polymethylmethacrylate/polyaniline-camphor sulfonic acid mixture dissolved in m-cresol. The patterns are imprinted using a silicon stamp having a 500 nm deep grating with 5 μm wide lines and spaces. The imprinting temperature was 140 °C, pressure 150 bar, and time 10 min. The conductivity of the blend was 1 S/cm prior to imprinting and decreased by a factor of about 2 in the process. Removing the residual film from the grooves by etching in argon/oxygen plasma results in resistance anisotropy larger than 104 perpendicular and parallel to the imprinted polymer ridges.

U2 - 10.1116/1.1354979

DO - 10.1116/1.1354979

M3 - Article

VL - 19

SP - 487

EP - 489

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

SN - 2166-2746

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ER -