Imprinting three-dimensional patterns directly into electrically conductive polymer blends is investigated. Silicon substrates are spin-coated by a polymethylmethacrylate/polyaniline-camphor sulfonic acid mixture dissolved in m-cresol. The patterns are imprinted using a silicon stamp having a 500 nm deep grating with 5 μm wide lines and spaces. The imprinting temperature was 140 °C, pressure 150 bar, and time 10 min. The conductivity of the blend was 1 S/cm prior to imprinting and decreased by a factor of about 2 in the process. Removing the residual film from the grooves by etching in argon/oxygen plasma results in resistance anisotropy larger than 104 perpendicular and parallel to the imprinted polymer ridges.
|Number of pages||3|
|Journal||Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics|
|Publication status||Published - 2001|
|MoE publication type||A1 Journal article-refereed|