Improved description of base dynamics in the modelling of bipolar transistors

Markku Sipilä, Veikko Porra, Martti Valtonen

    Research output: Contribution to journalArticleScientificpeer-review

    9 Citations (Scopus)

    Abstract

    An improved non‐linear high‐frequency model for the bipolar transistor is presented, based on considerations of the dynamics of the charge stored in the base region. the model incorporates higher‐order circuit elements in order to obtain increased accuracy in circuit simulation at high frequencies. the model is derived from device physics by solving the diffusion equation in the base region by means of a quasi‐static expansion. the result is a more accurate circuit representation, which can be added to existing bipolar transistor models. Simulation examples are given and the possible convergence problems associated with the model are discussed.

    Original languageEnglish
    Pages (from-to)465-482
    JournalInternational Journal of Circuit Theory and Applications
    Volume17
    Issue number4
    DOIs
    Publication statusPublished - 1989
    MoE publication typeA1 Journal article-refereed

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    Bipolar transistors
    Modeling
    Circuit Simulation
    Model
    Networks (circuits)
    Circuit simulation
    Diffusion equation
    Physics
    Charge
    Simulation

    Cite this

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    title = "Improved description of base dynamics in the modelling of bipolar transistors",
    abstract = "An improved non‐linear high‐frequency model for the bipolar transistor is presented, based on considerations of the dynamics of the charge stored in the base region. the model incorporates higher‐order circuit elements in order to obtain increased accuracy in circuit simulation at high frequencies. the model is derived from device physics by solving the diffusion equation in the base region by means of a quasi‐static expansion. the result is a more accurate circuit representation, which can be added to existing bipolar transistor models. Simulation examples are given and the possible convergence problems associated with the model are discussed.",
    author = "Markku Sipil{\"a} and Veikko Porra and Martti Valtonen",
    year = "1989",
    doi = "10.1002/cta.4490170408",
    language = "English",
    volume = "17",
    pages = "465--482",
    journal = "International Journal of Circuit Theory and Applications",
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    Improved description of base dynamics in the modelling of bipolar transistors. / Sipilä, Markku; Porra, Veikko; Valtonen, Martti.

    In: International Journal of Circuit Theory and Applications, Vol. 17, No. 4, 1989, p. 465-482.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Improved description of base dynamics in the modelling of bipolar transistors

    AU - Sipilä, Markku

    AU - Porra, Veikko

    AU - Valtonen, Martti

    PY - 1989

    Y1 - 1989

    N2 - An improved non‐linear high‐frequency model for the bipolar transistor is presented, based on considerations of the dynamics of the charge stored in the base region. the model incorporates higher‐order circuit elements in order to obtain increased accuracy in circuit simulation at high frequencies. the model is derived from device physics by solving the diffusion equation in the base region by means of a quasi‐static expansion. the result is a more accurate circuit representation, which can be added to existing bipolar transistor models. Simulation examples are given and the possible convergence problems associated with the model are discussed.

    AB - An improved non‐linear high‐frequency model for the bipolar transistor is presented, based on considerations of the dynamics of the charge stored in the base region. the model incorporates higher‐order circuit elements in order to obtain increased accuracy in circuit simulation at high frequencies. the model is derived from device physics by solving the diffusion equation in the base region by means of a quasi‐static expansion. the result is a more accurate circuit representation, which can be added to existing bipolar transistor models. Simulation examples are given and the possible convergence problems associated with the model are discussed.

    U2 - 10.1002/cta.4490170408

    DO - 10.1002/cta.4490170408

    M3 - Article

    VL - 17

    SP - 465

    EP - 482

    JO - International Journal of Circuit Theory and Applications

    JF - International Journal of Circuit Theory and Applications

    SN - 0098-9886

    IS - 4

    ER -