Improved description of base dynamics in the modelling of bipolar transistors

Markku Sipilä, Veikko Porra, Martti Valtonen

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)

Abstract

An improved non‐linear high‐frequency model for the bipolar transistor is presented, based on considerations of the dynamics of the charge stored in the base region. the model incorporates higher‐order circuit elements in order to obtain increased accuracy in circuit simulation at high frequencies. the model is derived from device physics by solving the diffusion equation in the base region by means of a quasi‐static expansion. the result is a more accurate circuit representation, which can be added to existing bipolar transistor models. Simulation examples are given and the possible convergence problems associated with the model are discussed.

Original languageEnglish
Pages (from-to)465-482
JournalInternational Journal of Circuit Theory and Applications
Volume17
Issue number4
DOIs
Publication statusPublished - 1989
MoE publication typeA1 Journal article-refereed

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Bipolar transistors
Modeling
Circuit Simulation
Model
Networks (circuits)
Circuit simulation
Diffusion equation
Physics
Charge
Simulation

Cite this

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title = "Improved description of base dynamics in the modelling of bipolar transistors",
abstract = "An improved non‐linear high‐frequency model for the bipolar transistor is presented, based on considerations of the dynamics of the charge stored in the base region. the model incorporates higher‐order circuit elements in order to obtain increased accuracy in circuit simulation at high frequencies. the model is derived from device physics by solving the diffusion equation in the base region by means of a quasi‐static expansion. the result is a more accurate circuit representation, which can be added to existing bipolar transistor models. Simulation examples are given and the possible convergence problems associated with the model are discussed.",
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doi = "10.1002/cta.4490170408",
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journal = "International Journal of Circuit Theory and Applications",
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Improved description of base dynamics in the modelling of bipolar transistors. / Sipilä, Markku; Porra, Veikko; Valtonen, Martti.

In: International Journal of Circuit Theory and Applications, Vol. 17, No. 4, 1989, p. 465-482.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Improved description of base dynamics in the modelling of bipolar transistors

AU - Sipilä, Markku

AU - Porra, Veikko

AU - Valtonen, Martti

PY - 1989

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N2 - An improved non‐linear high‐frequency model for the bipolar transistor is presented, based on considerations of the dynamics of the charge stored in the base region. the model incorporates higher‐order circuit elements in order to obtain increased accuracy in circuit simulation at high frequencies. the model is derived from device physics by solving the diffusion equation in the base region by means of a quasi‐static expansion. the result is a more accurate circuit representation, which can be added to existing bipolar transistor models. Simulation examples are given and the possible convergence problems associated with the model are discussed.

AB - An improved non‐linear high‐frequency model for the bipolar transistor is presented, based on considerations of the dynamics of the charge stored in the base region. the model incorporates higher‐order circuit elements in order to obtain increased accuracy in circuit simulation at high frequencies. the model is derived from device physics by solving the diffusion equation in the base region by means of a quasi‐static expansion. the result is a more accurate circuit representation, which can be added to existing bipolar transistor models. Simulation examples are given and the possible convergence problems associated with the model are discussed.

U2 - 10.1002/cta.4490170408

DO - 10.1002/cta.4490170408

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JO - International Journal of Circuit Theory and Applications

JF - International Journal of Circuit Theory and Applications

SN - 0098-9886

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ER -