TY - JOUR
T1 - Improved neuron MOS-transistor structures for integrated neural network circuits
AU - Rantala, Arto
AU - Franssila, Sami
AU - Kaski, Kimmo
AU - Lampinen, Jouko
AU - Åberg, Markku
AU - Kuivalainen, Pekka
PY - 2001
Y1 - 2001
N2 - The neuron MOS transistor is a recently discovered device which is capable of executing a weighted sum calculation of multiple input signals and threshold operation based on the result of summation, thereby simulating the function of biological neurons. A comprehensive set of neuron test transistors has been designed, where a number of input gates are coupled capacitively to a floating gate, which controls the channel current. Integrated circuits for neural network applications have also been designed, based on the neuron MOS transistors. These circuits include neuron CMOS inverters and A/D and D/A converters. To increase the accuracy of the neuron MOSFET structures, calibration techniques are proposed and tested. All the test structures and circuits are implemented by using a standard 0.8 μm double-polysilicon CMOS technology. Attention was paid to saving the layout area and reducing power consumption.
AB - The neuron MOS transistor is a recently discovered device which is capable of executing a weighted sum calculation of multiple input signals and threshold operation based on the result of summation, thereby simulating the function of biological neurons. A comprehensive set of neuron test transistors has been designed, where a number of input gates are coupled capacitively to a floating gate, which controls the channel current. Integrated circuits for neural network applications have also been designed, based on the neuron MOS transistors. These circuits include neuron CMOS inverters and A/D and D/A converters. To increase the accuracy of the neuron MOSFET structures, calibration techniques are proposed and tested. All the test structures and circuits are implemented by using a standard 0.8 μm double-polysilicon CMOS technology. Attention was paid to saving the layout area and reducing power consumption.
U2 - 10.1049/ip-cds:20010055
DO - 10.1049/ip-cds:20010055
M3 - Article in a proceedings journal
SN - 1350-2409
VL - 148
SP - 25
EP - 34
JO - IEE Proceedings: Circuits, Devices and Systems
JF - IEE Proceedings: Circuits, Devices and Systems
IS - 1
ER -