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Improved neuron MOS-transistor structures for integrated neural network circuits

  • Arto Rantala
  • , Sami Franssila
  • , Kimmo Kaski
  • , Jouko Lampinen
  • , Markku Åberg
  • , Pekka Kuivalainen
    • Helsinki University of Technology

    Research output: Contribution to journal › Article in a proceedings journal › Scientific › peer-review

    Abstract

    The neuron MOS transistor is a recently discovered device which is capable of executing a weighted sum calculation of multiple input signals and threshold operation based on the result of summation, thereby simulating the function of biological neurons. A comprehensive set of neuron test transistors has been designed, where a number of input gates are coupled capacitively to a floating gate, which controls the channel current. Integrated circuits for neural network applications have also been designed, based on the neuron MOS transistors. These circuits include neuron CMOS inverters and A/D and D/A converters. To increase the accuracy of the neuron MOSFET structures, calibration techniques are proposed and tested. All the test structures and circuits are implemented by using a standard 0.8 μm double-polysilicon CMOS technology. Attention was paid to saving the layout area and reducing power consumption.
    Original languageEnglish
    Pages (from-to)25-34
    JournalIEE Proceedings: Circuits, Devices and Systems
    Volume148
    Issue number1
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA4 Article in a conference publication

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