Improvement of SC-1 Bath Stability by Complexing Agents

Heini Saloniemi; Taru Visti; Simo Eränen; Arto Kiviranta; Olli Anttila

doi:10.1238/Physica.Topical.101a00226

Improvement of SC-1 Bath Stability by Complexing Agents

Heini Saloniemi (Corresponding Author), Taru Visti, Simo Eränen, Arto Kiviranta, Olli Anttila

Okmetic Oyj

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

The improvement in SC-1 lifetime was studied by adding complexing agents: TEA, EDTA, CDTA, DTPA and DTPMP, to a bath, which was intentionally contaminated with a multimetal standard solution. The decomposition of hydrogen peroxide in the bath was monitored in situ by an optical analyzer. Adsorption of metals to wafers was analyzed by spinning cleaning solutions, containing metals and complexing agents, on wafers. Metal concentrations were measured by TXRF and GFAAS combined with VPD sample preparation.

Original language	English
Pages (from-to)	226-229
Journal	Physica Scripta
Volume	2002
Issue number	T101
DOIs	https://doi.org/10.1238/Physica.Topical.101a00226
Publication status	Published - 2002
MoE publication type	A1 Journal article-refereed
Event	19th Nordic Semiconductor Meeting, NSM19 - Copenhagen, Denmark Duration: 20 May 2001 → 23 May 2001

Access to Document

10.1238/Physica.Topical.101a00226

Cite this

@article{4bab7dc0f0284e28b8a4eedd9cc55bce,

title = "Improvement of SC-1 Bath Stability by Complexing Agents",

abstract = "The improvement in SC-1 lifetime was studied by adding complexing agents: TEA, EDTA, CDTA, DTPA and DTPMP, to a bath, which was intentionally contaminated with a multimetal standard solution. The decomposition of hydrogen peroxide in the bath was monitored in situ by an optical analyzer. Adsorption of metals to wafers was analyzed by spinning cleaning solutions, containing metals and complexing agents, on wafers. Metal concentrations were measured by TXRF and GFAAS combined with VPD sample preparation.",

author = "Heini Saloniemi and Taru Visti and Simo Er{\"a}nen and Arto Kiviranta and Olli Anttila",

year = "2002",

doi = "10.1238/Physica.Topical.101a00226",

language = "English",

volume = "2002",

pages = "226--229",

journal = "Physica Scripta",

issn = "0031-8949",

publisher = "Institute of Physics IOP",

number = "T101",

note = "19th Nordic Semiconductor Meeting, NSM19<br/>, NSM19 ; Conference date: 20-05-2001 Through 23-05-2001",

}

TY - JOUR

T1 - Improvement of SC-1 Bath Stability by Complexing Agents

AU - Saloniemi, Heini

AU - Visti, Taru

AU - Eränen, Simo

AU - Kiviranta, Arto

AU - Anttila, Olli

PY - 2002

Y1 - 2002

N2 - The improvement in SC-1 lifetime was studied by adding complexing agents: TEA, EDTA, CDTA, DTPA and DTPMP, to a bath, which was intentionally contaminated with a multimetal standard solution. The decomposition of hydrogen peroxide in the bath was monitored in situ by an optical analyzer. Adsorption of metals to wafers was analyzed by spinning cleaning solutions, containing metals and complexing agents, on wafers. Metal concentrations were measured by TXRF and GFAAS combined with VPD sample preparation.

AB - The improvement in SC-1 lifetime was studied by adding complexing agents: TEA, EDTA, CDTA, DTPA and DTPMP, to a bath, which was intentionally contaminated with a multimetal standard solution. The decomposition of hydrogen peroxide in the bath was monitored in situ by an optical analyzer. Adsorption of metals to wafers was analyzed by spinning cleaning solutions, containing metals and complexing agents, on wafers. Metal concentrations were measured by TXRF and GFAAS combined with VPD sample preparation.

U2 - 10.1238/Physica.Topical.101a00226

DO - 10.1238/Physica.Topical.101a00226

M3 - Article

SN - 0031-8949

VL - 2002

SP - 226

EP - 229

JO - Physica Scripta

JF - Physica Scripta

IS - T101

T2 - 19th Nordic Semiconductor Meeting, NSM19<br/>

Y2 - 20 May 2001 through 23 May 2001

ER -

Improvement of SC-1 Bath Stability by Complexing Agents

Abstract

Access to Document

Fingerprint

Cite this