The improvement in SC-1 lifetime was studied by adding complexing agents: TEA, EDTA, CDTA, DTPA and DTPMP, to a bath, which was intentionally contaminated with a multimetal standard solution. The decomposition of hydrogen peroxide in the bath was monitored in situ by an optical analyzer. Adsorption of metals to wafers was analyzed by spinning cleaning solutions, containing metals and complexing agents, on wafers. Metal concentrations were measured by TXRF and GFAAS combined with VPD sample preparation.
|Published - 2002
|MoE publication type
|A1 Journal article-refereed
|19th Nordic Semiconductor Meeting, NSM19
- Copenhagen, Denmark
Duration: 20 May 2001 → 23 May 2001