Improving the RF properties of CMOS models

Jan Saijets, Mikael Andersson, Markku Åberg

Research output: Contribution to journalArticleScientificpeer-review

Abstract

RF behavior improvement suggestions to the MOSFET models were studied using mostly BSIM3v3 and Philips MOS Model 9 (MM9). Different substrate resistance model topologies were compared. Also distributing the gate, source and drain resistance was studied as well as the use of an additional capacitance Cg in parallel with the gate resistance.
The basis for the AC improvement studies is an accurate DC and AC extraction of the basic device model. Scalable MOSFET parameter extraction was done using the APLAC circuit simulator and by programs written with APLAC description language.
The device characterization set included gate widths down to 0.4 μm. The parasitics of the pads and wires were carefully removed utilizing de-embedding techniques.
A gate resistor was used for both MM9 and BSIM3 and also Cgb0 zero-bias capacitance was added to MM9.
Original languageEnglish
Pages (from-to)54-57
JournalPhysica Scripta
Volume2002
Issue numberT101
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Fingerprint

CMOS
MOSFET
Capacitance
alternating current
field effect transistors
capacitance
Model
distributing
resistors
embedding
simulators
suggestion
Simulator
topology
direct current
Substrate
wire
Topology
Zero
Resistance

Cite this

Saijets, Jan ; Andersson, Mikael ; Åberg, Markku. / Improving the RF properties of CMOS models. In: Physica Scripta. 2002 ; Vol. 2002, No. T101. pp. 54-57.
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Improving the RF properties of CMOS models. / Saijets, Jan; Andersson, Mikael; Åberg, Markku.

In: Physica Scripta, Vol. 2002, No. T101, 2002, p. 54-57.

Research output: Contribution to journalArticleScientificpeer-review

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