Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

V. A. Shalygin; L. E. Vorobjev; D. A. Firsov; V. Yu Panevin; A. N. Sofronov; G. A. Melentyev; A. V. Antonov; V. I. Gavrilenko; A. V. Andrianov; A. O. Zakharyin; S. Suihkonen; Pekka Törmä; M. Ali; H. Lipsanen

doi:10.1063/1.3272019

Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

V. A. Shalygin (Corresponding Author), L. E. Vorobjev, D. A. Firsov, V. Yu Panevin, A. N. Sofronov, G. A. Melentyev, A. V. Antonov, V. I. Gavrilenko, A. V. Andrianov, A. O. Zakharyin, S. Suihkonen, Pekka Törmä, M. Ali, H. Lipsanen

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Abstract

We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels (at noncompensated donor density from 4.5× 1016 to 3.4× 1018 cm-3). Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Journal of Applied Physics
Volume	106
Issue number	12
DOIs	https://doi.org/10.1063/1.3272019
Publication status	Published - 2009
MoE publication type	A1 Journal article-refereed

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Shalygin, V. A., Vorobjev, L. E., Firsov, D. A., Panevin, V. Y., Sofronov, A. N., Melentyev, G. A., Antonov, A. V., Gavrilenko, V. I., Andrianov, A. V., Zakharyin, A. O., Suihkonen, S., Törmä, P., Ali, M., & Lipsanen, H. (2009). Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. Journal of Applied Physics, 106(12), 1-5. https://doi.org/10.1063/1.3272019

@article{abd4338ac9f841c3bd208d970bba13bc,

title = "Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field",

abstract = "We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels (at noncompensated donor density from 4.5× 1016 to 3.4× 1018 cm-3). Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.",

author = "Shalygin, {V. A.} and Vorobjev, {L. E.} and Firsov, {D. A.} and Panevin, {V. Yu} and Sofronov, {A. N.} and Melentyev, {G. A.} and Antonov, {A. V.} and Gavrilenko, {V. I.} and Andrianov, {A. V.} and Zakharyin, {A. O.} and S. Suihkonen and Pekka T{\"o}rm{\"a} and M. Ali and H. Lipsanen",

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year = "2009",

doi = "10.1063/1.3272019",

language = "English",

volume = "106",

pages = "1--5",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics (AIP)",

number = "12",

}

Shalygin, VA, Vorobjev, LE, Firsov, DA, Panevin, VY, Sofronov, AN, Melentyev, GA, Antonov, AV, Gavrilenko, VI, Andrianov, AV, Zakharyin, AO, Suihkonen, S, Törmä, P, Ali, M & Lipsanen, H 2009, 'Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field', Journal of Applied Physics, vol. 106, no. 12, pp. 1-5. https://doi.org/10.1063/1.3272019

TY - JOUR

T1 - Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

AU - Shalygin, V. A.

AU - Vorobjev, L. E.

AU - Firsov, D. A.

AU - Panevin, V. Yu

AU - Sofronov, A. N.

AU - Melentyev, G. A.

AU - Antonov, A. V.

AU - Gavrilenko, V. I.

AU - Andrianov, A. V.

AU - Zakharyin, A. O.

AU - Suihkonen, S.

AU - Törmä, Pekka

AU - Ali, M.

AU - Lipsanen, H.

N1 - M1 - 123523

PY - 2009

Y1 - 2009

N2 - We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels (at noncompensated donor density from 4.5× 1016 to 3.4× 1018 cm-3). Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.

AB - We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels (at noncompensated donor density from 4.5× 1016 to 3.4× 1018 cm-3). Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.

U2 - 10.1063/1.3272019

DO - 10.1063/1.3272019

M3 - Article

SN - 0021-8979

VL - 106

SP - 1

EP - 5

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

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