Impurity related interface effects in GSMBE grown InP

Keijo Rakennus; Jari Likonen; J. Näppi; Kirsi Tappura; Harri Asonen; Markus Pessa

doi:10.1109/ICIPRM.1993.380698

Impurity related interface effects in GSMBE grown InP

Keijo Rakennus, Jari Likonen, J. Näppi, Kirsi Tappura, Harri Asonen, Markus Pessa

Not published at VTT

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

The authors have found a highly conductive n-type interface layer between semi-insulating InP substrate and undoped InP layer grown by gas source molecular beam epitaxy. Due to this interfacial layer the measured Hall mobilities at 300 K and 77 K are underestimated and carrier concentration is overestimated. The secondary ion mass spectrometry depth profiles reveal an accumulation of silicon and carbon at the interface. The samples were grown on differently pretreated substrates. It seems that silicon and carbon contaminations originate from the exposure to air during the loading to the growth chamber.

Original language	English
Title of host publication	1993 (5th) International Conference on Indium Phosphide and Related Materials
Place of Publication	Paris
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	107-110
DOIs	https://doi.org/10.1109/ICIPRM.1993.380698
Publication status	Published - 1993
MoE publication type	A4 Article in a conference publication
Event	5th International Conference on Indium Phosphide and Related Materials - Paris, France Duration: 19 Apr 1993 → 22 Apr 1993

Conference

Conference	5th International Conference on Indium Phosphide and Related Materials
Country/Territory	France
City	Paris
Period	19/04/93 → 22/04/93

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10.1109/ICIPRM.1993.380698

Cite this

@inproceedings{f5acbdb3bd134c4092446c55edc8b02a,

title = "Impurity related interface effects in GSMBE grown InP",

abstract = "The authors have found a highly conductive n-type interface layer between semi-insulating InP substrate and undoped InP layer grown by gas source molecular beam epitaxy. Due to this interfacial layer the measured Hall mobilities at 300 K and 77 K are underestimated and carrier concentration is overestimated. The secondary ion mass spectrometry depth profiles reveal an accumulation of silicon and carbon at the interface. The samples were grown on differently pretreated substrates. It seems that silicon and carbon contaminations originate from the exposure to air during the loading to the growth chamber.",

author = "Keijo Rakennus and Jari Likonen and J. N{\"a}ppi and Kirsi Tappura and Harri Asonen and Markus Pessa",

year = "1993",

doi = "10.1109/ICIPRM.1993.380698",

language = "English",

pages = "107--110",

booktitle = "1993 (5th) International Conference on Indium Phosphide and Related Materials",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "5th International Conference on Indium Phosphide and Related Materials ; Conference date: 19-04-1993 Through 22-04-1993",

}

Rakennus, K, Likonen, J, Näppi, J, Tappura, K, Asonen, H & Pessa, M 1993, Impurity related interface effects in GSMBE grown InP. in 1993 (5th) International Conference on Indium Phosphide and Related Materials. IEEE Institute of Electrical and Electronic Engineers, Paris, pp. 107-110, 5th International Conference on Indium Phosphide and Related Materials, Paris, France, 19/04/93. https://doi.org/10.1109/ICIPRM.1993.380698

Impurity related interface effects in GSMBE grown InP. / Rakennus, Keijo; Likonen, Jari; Näppi, J. et al.
1993 (5th) International Conference on Indium Phosphide and Related Materials. Paris: IEEE Institute of Electrical and Electronic Engineers, 1993. p. 107-110.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Impurity related interface effects in GSMBE grown InP

AU - Rakennus, Keijo

AU - Likonen, Jari

AU - Näppi, J.

AU - Tappura, Kirsi

AU - Asonen, Harri

AU - Pessa, Markus

PY - 1993

Y1 - 1993

N2 - The authors have found a highly conductive n-type interface layer between semi-insulating InP substrate and undoped InP layer grown by gas source molecular beam epitaxy. Due to this interfacial layer the measured Hall mobilities at 300 K and 77 K are underestimated and carrier concentration is overestimated. The secondary ion mass spectrometry depth profiles reveal an accumulation of silicon and carbon at the interface. The samples were grown on differently pretreated substrates. It seems that silicon and carbon contaminations originate from the exposure to air during the loading to the growth chamber.

AB - The authors have found a highly conductive n-type interface layer between semi-insulating InP substrate and undoped InP layer grown by gas source molecular beam epitaxy. Due to this interfacial layer the measured Hall mobilities at 300 K and 77 K are underestimated and carrier concentration is overestimated. The secondary ion mass spectrometry depth profiles reveal an accumulation of silicon and carbon at the interface. The samples were grown on differently pretreated substrates. It seems that silicon and carbon contaminations originate from the exposure to air during the loading to the growth chamber.

U2 - 10.1109/ICIPRM.1993.380698

DO - 10.1109/ICIPRM.1993.380698

M3 - Conference article in proceedings

SP - 107

EP - 110

BT - 1993 (5th) International Conference on Indium Phosphide and Related Materials

PB - IEEE Institute of Electrical and Electronic Engineers

CY - Paris

T2 - 5th International Conference on Indium Phosphide and Related Materials

Y2 - 19 April 1993 through 22 April 1993

ER -

Impurity related interface effects in GSMBE grown InP

Abstract

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