Impurity related interface effects in GSMBE grown InP

Keijo Rakennus, Jari Likonen, J. Näppi, Kirsi Tappura, Harri Asonen, Markus Pessa

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)

Abstract

The authors have found a highly conductive n-type interface layer between semi-insulating InP substrate and undoped InP layer grown by gas source molecular beam epitaxy. Due to this interfacial layer the measured Hall mobilities at 300 K and 77 K are underestimated and carrier concentration is overestimated. The secondary ion mass spectrometry depth profiles reveal an accumulation of silicon and carbon at the interface. The samples were grown on differently pretreated substrates. It seems that silicon and carbon contaminations originate from the exposure to air during the loading to the growth chamber.
Original languageEnglish
Title of host publication1993 (5th) International Conference on Indium Phosphide and Related Materials
Place of PublicationParis
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages107-110
DOIs
Publication statusPublished - 1993
MoE publication typeA4 Article in a conference publication
Event5th International Conference on Indium Phosphide and Related Materials - Paris, France
Duration: 19 Apr 199322 Apr 1993

Conference

Conference5th International Conference on Indium Phosphide and Related Materials
CountryFrance
CityParis
Period19/04/9322/04/93

Fingerprint

impurities
phytotrons
carbon
silicon
secondary ion mass spectrometry
contamination
molecular beam epitaxy
air
profiles
gases

Cite this

Rakennus, K., Likonen, J., Näppi, J., Tappura, K., Asonen, H., & Pessa, M. (1993). Impurity related interface effects in GSMBE grown InP. In 1993 (5th) International Conference on Indium Phosphide and Related Materials (pp. 107-110). Paris: Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/ICIPRM.1993.380698
Rakennus, Keijo ; Likonen, Jari ; Näppi, J. ; Tappura, Kirsi ; Asonen, Harri ; Pessa, Markus. / Impurity related interface effects in GSMBE grown InP. 1993 (5th) International Conference on Indium Phosphide and Related Materials. Paris : Institute of Electrical and Electronic Engineers IEEE, 1993. pp. 107-110
@inproceedings{f5acbdb3bd134c4092446c55edc8b02a,
title = "Impurity related interface effects in GSMBE grown InP",
abstract = "The authors have found a highly conductive n-type interface layer between semi-insulating InP substrate and undoped InP layer grown by gas source molecular beam epitaxy. Due to this interfacial layer the measured Hall mobilities at 300 K and 77 K are underestimated and carrier concentration is overestimated. The secondary ion mass spectrometry depth profiles reveal an accumulation of silicon and carbon at the interface. The samples were grown on differently pretreated substrates. It seems that silicon and carbon contaminations originate from the exposure to air during the loading to the growth chamber.",
author = "Keijo Rakennus and Jari Likonen and J. N{\"a}ppi and Kirsi Tappura and Harri Asonen and Markus Pessa",
year = "1993",
doi = "10.1109/ICIPRM.1993.380698",
language = "English",
pages = "107--110",
booktitle = "1993 (5th) International Conference on Indium Phosphide and Related Materials",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
address = "United States",

}

Rakennus, K, Likonen, J, Näppi, J, Tappura, K, Asonen, H & Pessa, M 1993, Impurity related interface effects in GSMBE grown InP. in 1993 (5th) International Conference on Indium Phosphide and Related Materials. Institute of Electrical and Electronic Engineers IEEE, Paris, pp. 107-110, 5th International Conference on Indium Phosphide and Related Materials, Paris, France, 19/04/93. https://doi.org/10.1109/ICIPRM.1993.380698

Impurity related interface effects in GSMBE grown InP. / Rakennus, Keijo; Likonen, Jari; Näppi, J.; Tappura, Kirsi; Asonen, Harri; Pessa, Markus.

1993 (5th) International Conference on Indium Phosphide and Related Materials. Paris : Institute of Electrical and Electronic Engineers IEEE, 1993. p. 107-110.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Impurity related interface effects in GSMBE grown InP

AU - Rakennus, Keijo

AU - Likonen, Jari

AU - Näppi, J.

AU - Tappura, Kirsi

AU - Asonen, Harri

AU - Pessa, Markus

PY - 1993

Y1 - 1993

N2 - The authors have found a highly conductive n-type interface layer between semi-insulating InP substrate and undoped InP layer grown by gas source molecular beam epitaxy. Due to this interfacial layer the measured Hall mobilities at 300 K and 77 K are underestimated and carrier concentration is overestimated. The secondary ion mass spectrometry depth profiles reveal an accumulation of silicon and carbon at the interface. The samples were grown on differently pretreated substrates. It seems that silicon and carbon contaminations originate from the exposure to air during the loading to the growth chamber.

AB - The authors have found a highly conductive n-type interface layer between semi-insulating InP substrate and undoped InP layer grown by gas source molecular beam epitaxy. Due to this interfacial layer the measured Hall mobilities at 300 K and 77 K are underestimated and carrier concentration is overestimated. The secondary ion mass spectrometry depth profiles reveal an accumulation of silicon and carbon at the interface. The samples were grown on differently pretreated substrates. It seems that silicon and carbon contaminations originate from the exposure to air during the loading to the growth chamber.

U2 - 10.1109/ICIPRM.1993.380698

DO - 10.1109/ICIPRM.1993.380698

M3 - Conference article in proceedings

SP - 107

EP - 110

BT - 1993 (5th) International Conference on Indium Phosphide and Related Materials

PB - Institute of Electrical and Electronic Engineers IEEE

CY - Paris

ER -

Rakennus K, Likonen J, Näppi J, Tappura K, Asonen H, Pessa M. Impurity related interface effects in GSMBE grown InP. In 1993 (5th) International Conference on Indium Phosphide and Related Materials. Paris: Institute of Electrical and Electronic Engineers IEEE. 1993. p. 107-110 https://doi.org/10.1109/ICIPRM.1993.380698