In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications

Mari Ylönen (Corresponding Author), Altti Torkkeli, Hannu Kattelus

Research output: Contribution to journalArticleScientificpeer-review

20 Citations (Scopus)

Abstract

A deposition process for in situ boron-doped LPCVD polysilicon with low tensile stress is described. The films are deposited with an amorphous microstructure and crystallised by post-deposition annealing. The final value of residual stress can be adjusted by the annealing temperature. The microstructure, resistivity, dopant concentration, residual stress and surface morphology, as well as the effect of annealing treatment on these parameters are characterised to evaluate the potential of these films for MEMS applications.
Original languageEnglish
Pages (from-to)79-87
JournalSensors and Actuators A: Physical
Volume109
Issue number1-2
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Keywords

  • residual stress
  • low tensile stress
  • in situ boron-doping
  • LPCVD polysilicon
  • annealing
  • MEMS
  • electromechanics

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