In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications

Mari Ylönen (Corresponding Author), Altti Torkkeli, Hannu Kattelus

Research output: Contribution to journalArticleScientificpeer-review

19 Citations (Scopus)

Abstract

A deposition process for in situ boron-doped LPCVD polysilicon with low tensile stress is described. The films are deposited with an amorphous microstructure and crystallised by post-deposition annealing. The final value of residual stress can be adjusted by the annealing temperature. The microstructure, resistivity, dopant concentration, residual stress and surface morphology, as well as the effect of annealing treatment on these parameters are characterised to evaluate the potential of these films for MEMS applications.
Original languageEnglish
Pages (from-to)79-87
Number of pages9
JournalSensors and Actuators A: Physical
Volume109
Issue number1-2
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Fingerprint

Boron
tensile stress
Polysilicon
Tensile stress
microelectromechanical systems
MEMS
boron
Annealing
annealing
residual stress
Residual stresses
microstructure
Microstructure
Surface morphology
Doping (additives)
electrical resistivity
Temperature
temperature

Keywords

  • residual stress
  • low tensile stress
  • in situ boron-doping
  • LPCVD polysilicon
  • annealing
  • MEMS
  • electromechanics

Cite this

Ylönen, Mari ; Torkkeli, Altti ; Kattelus, Hannu. / In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications. In: Sensors and Actuators A: Physical. 2003 ; Vol. 109, No. 1-2. pp. 79-87.
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In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications. / Ylönen, Mari (Corresponding Author); Torkkeli, Altti; Kattelus, Hannu.

In: Sensors and Actuators A: Physical, Vol. 109, No. 1-2, 2003, p. 79-87.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications

AU - Ylönen, Mari

AU - Torkkeli, Altti

AU - Kattelus, Hannu

PY - 2003

Y1 - 2003

N2 - A deposition process for in situ boron-doped LPCVD polysilicon with low tensile stress is described. The films are deposited with an amorphous microstructure and crystallised by post-deposition annealing. The final value of residual stress can be adjusted by the annealing temperature. The microstructure, resistivity, dopant concentration, residual stress and surface morphology, as well as the effect of annealing treatment on these parameters are characterised to evaluate the potential of these films for MEMS applications.

AB - A deposition process for in situ boron-doped LPCVD polysilicon with low tensile stress is described. The films are deposited with an amorphous microstructure and crystallised by post-deposition annealing. The final value of residual stress can be adjusted by the annealing temperature. The microstructure, resistivity, dopant concentration, residual stress and surface morphology, as well as the effect of annealing treatment on these parameters are characterised to evaluate the potential of these films for MEMS applications.

KW - residual stress

KW - low tensile stress

KW - in situ boron-doping

KW - LPCVD polysilicon

KW - annealing

KW - MEMS

KW - electromechanics

U2 - 10.1016/j.sna.2003.09.017

DO - 10.1016/j.sna.2003.09.017

M3 - Article

VL - 109

SP - 79

EP - 87

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

SN - 0924-4247

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