In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications

Mari Ylönen; Altti Torkkeli; Hannu Kattelus

doi:10.1016/j.sna.2003.09.017

In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications

Mari Ylönen (Corresponding Author), Altti Torkkeli, Hannu Kattelus

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

22 Citations (Scopus)

Abstract

A deposition process for in situ boron-doped LPCVD polysilicon with low tensile stress is described. The films are deposited with an amorphous microstructure and crystallised by post-deposition annealing. The final value of residual stress can be adjusted by the annealing temperature. The microstructure, resistivity, dopant concentration, residual stress and surface morphology, as well as the effect of annealing treatment on these parameters are characterised to evaluate the potential of these films for MEMS applications.

Original language	English
Pages (from-to)	79-87
Journal	Sensors and Actuators A: Physical
Volume	109
Issue number	1-2
DOIs	https://doi.org/10.1016/j.sna.2003.09.017
Publication status	Published - 2003
MoE publication type	A1 Journal article-refereed

Keywords

residual stress
low tensile stress
in situ boron-doping
LPCVD polysilicon
annealing
MEMS
electromechanics

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10.1016/j.sna.2003.09.017

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title = "In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications",

abstract = "A deposition process for in situ boron-doped LPCVD polysilicon with low tensile stress is described. The films are deposited with an amorphous microstructure and crystallised by post-deposition annealing. The final value of residual stress can be adjusted by the annealing temperature. The microstructure, resistivity, dopant concentration, residual stress and surface morphology, as well as the effect of annealing treatment on these parameters are characterised to evaluate the potential of these films for MEMS applications.",

keywords = "residual stress, low tensile stress, in situ boron-doping, LPCVD polysilicon, annealing, MEMS, electromechanics",

author = "Mari Yl{\"o}nen and Altti Torkkeli and Hannu Kattelus",

year = "2003",

doi = "10.1016/j.sna.2003.09.017",

language = "English",

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T1 - In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications

AU - Ylönen, Mari

AU - Torkkeli, Altti

AU - Kattelus, Hannu

PY - 2003

Y1 - 2003

N2 - A deposition process for in situ boron-doped LPCVD polysilicon with low tensile stress is described. The films are deposited with an amorphous microstructure and crystallised by post-deposition annealing. The final value of residual stress can be adjusted by the annealing temperature. The microstructure, resistivity, dopant concentration, residual stress and surface morphology, as well as the effect of annealing treatment on these parameters are characterised to evaluate the potential of these films for MEMS applications.

AB - A deposition process for in situ boron-doped LPCVD polysilicon with low tensile stress is described. The films are deposited with an amorphous microstructure and crystallised by post-deposition annealing. The final value of residual stress can be adjusted by the annealing temperature. The microstructure, resistivity, dopant concentration, residual stress and surface morphology, as well as the effect of annealing treatment on these parameters are characterised to evaluate the potential of these films for MEMS applications.

KW - residual stress

KW - low tensile stress

KW - in situ boron-doping

KW - LPCVD polysilicon

KW - annealing

KW - MEMS

KW - electromechanics

U2 - 10.1016/j.sna.2003.09.017

DO - 10.1016/j.sna.2003.09.017

M3 - Article

SN - 0924-4247

VL - 109

SP - 79

EP - 87

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

IS - 1-2

ER -

In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications

Abstract

Keywords

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