A deposition process for in situ boron-doped LPCVD polysilicon with low tensile stress is described. The films are deposited with an amorphous microstructure and crystallised by post-deposition annealing. The final value of residual stress can be adjusted by the annealing temperature. The microstructure, resistivity, dopant concentration, residual stress and surface morphology, as well as the effect of annealing treatment on these parameters are characterised to evaluate the potential of these films for MEMS applications.
- residual stress
- low tensile stress
- in situ boron-doping
- LPCVD polysilicon
Ylönen, M., Torkkeli, A., & Kattelus, H. (2003). In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications. Sensors and Actuators A: Physical, 109(1-2), 79-87. https://doi.org/10.1016/j.sna.2003.09.017