In-situ boron-doped lpcvd polysilicon with low tensile stress for mems applications

Mari Ylönen, Altti Torkkeli, Hannu Kattelus

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Original languageEnglish
Title of host publicationConference Papers 2002. 4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002
Subtitle of host publicationEspoo, FI , 10 - 12 June 2002
Place of PublicationLondon, UK
PublisherIOM Communications Ltd.
Pages121-124
ISBN (Print)1-86125-155-6
Publication statusPublished - 2002
MoE publication typeA4 Article in a conference publication
Event4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002 - Espoo, Finland
Duration: 10 Jun 200212 Jun 2002

Conference

Conference4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002
CountryFinland
CityEspoo
Period10/06/0212/06/02

Cite this

Ylönen, M., Torkkeli, A., & Kattelus, H. (2002). In-situ boron-doped lpcvd polysilicon with low tensile stress for mems applications. In Conference Papers 2002. 4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002 : Espoo, FI , 10 - 12 June 2002 (pp. 121-124). IOM Communications Ltd..