In-situ boron-doped lpcvd polysilicon with low tensile stress for mems applications

Mari Ylönen; Altti Torkkeli; Hannu Kattelus

In-situ boron-doped lpcvd polysilicon with low tensile stress for mems applications

Mari Ylönen, Altti Torkkeli, Hannu Kattelus

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Original language	English
Title of host publication	Conference Papers 2002. 4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002
Subtitle of host publication	Espoo, FI , 10 - 12 June 2002
Place of Publication	London, UK
Publisher	IOM Communications Ltd.
Pages	121-124
ISBN (Print)	1-86125-155-6
Publication status	Published - 2002
MoE publication type	A4 Article in a conference publication
Event	4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002 - Espoo, Finland Duration: 10 Jun 2002 → 12 Jun 2002

Conference

Conference	4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002
Country/Territory	Finland
City	Espoo
Period	10/06/02 → 12/06/02

Cite this

@inproceedings{33bee8787f904504acd3c4496e96c129,

title = "In-situ boron-doped lpcvd polysilicon with low tensile stress for mems applications",

author = "Mari Yl{\"o}nen and Altti Torkkeli and Hannu Kattelus",

year = "2002",

language = "English",

isbn = "1-86125-155-6",

pages = "121--124",

booktitle = "Conference Papers 2002. 4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002",

publisher = "IOM Communications Ltd.",

address = "United Kingdom",

note = "4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002 ; Conference date: 10-06-2002 Through 12-06-2002",

}

Ylönen, M, Torkkeli, A & Kattelus, H 2002, In-situ boron-doped lpcvd polysilicon with low tensile stress for mems applications. in Conference Papers 2002. 4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002 : Espoo, FI , 10 - 12 June 2002. IOM Communications Ltd., London, UK, pp. 121-124, 4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002, Espoo, Finland, 10/06/02.

In-situ boron-doped lpcvd polysilicon with low tensile stress for mems applications. / Ylönen, Mari; Torkkeli, Altti; Kattelus, Hannu.
Conference Papers 2002. 4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002 : Espoo, FI , 10 - 12 June 2002. London, UK: IOM Communications Ltd., 2002. p. 121-124.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - In-situ boron-doped lpcvd polysilicon with low tensile stress for mems applications

AU - Ylönen, Mari

AU - Torkkeli, Altti

AU - Kattelus, Hannu

PY - 2002

Y1 - 2002

M3 - Conference article in proceedings

SN - 1-86125-155-6

SP - 121

EP - 124

BT - Conference Papers 2002. 4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002

PB - IOM Communications Ltd.

CY - London, UK

T2 - 4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002

Y2 - 10 June 2002 through 12 June 2002

ER -