In situ TEM observation of dislocation evolution in Kr-irradiated UO 2 single crystal

  • Ling Feng He*
  • , Mahima Gupta
  • , Clarissa A. Yablinsky
  • , Jian Gan
  • , Marquis A. Kirk
  • , Xian Ming Bai
  • , Janne Pakarinen
  • , Todd R. Allen
  • *Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

67 Citations (Scopus)

Abstract

In situ transmission electron microscopy (TEM) observation of UO2 single crystal irradiated with Kr ions at high temperatures was conducted to understand the dislocation evolution due to high-energy radiation. The dislocation evolution in UO2 single crystal is shown to occur as nucleation and growth of dislocation loops at low-irradiation doses, followed by transformation to extended dislocation segments and networks at high doses, as well as shrinkage and annihilation of some loops and dislocations due to high temperature annealing. Generally the trends of dislocation evolution in UO2 were similar under Kr irradiation at different ion energies and temperatures (150 keV at 600 C and 1 MeV at 800 C) used in this work. Interstitial-type dislocation loops with Burgers vector along ⟨110⟩ were observed in the Kr-irradiated UO2. The irradiated specimens were denuded of dislocation loops near the surface.

Original languageEnglish
Pages (from-to)71-77
JournalJournal of Nuclear Materials
Volume443
Issue number1-3
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

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