In2O3 thin-film transistors via inkjet printing for depletion-load nMOS inverters

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Abstract

Ability to digitally control the amount of a deposited material is one of the many advantages of inkjet printing. In this letter, we demonstrate the applicability of inkjet printing for the fabrication of depletion-load nMOS inverters based on metal oxide thin-film-transistors (TFTs) from printed metal oxide precursors where the threshold voltage of the TFTs is controlled by adjusting the thickness of the deposited semiconductor layer. Enhancement- and depletion-mode n-type In2O3 TFTs were fabricated from In-nitrate precursor using two printing strategies: 1) multilayer multinozzle printing and 2) single-layer single-nozzle printing in perpendicular or parallel to the TFT channel. TFTs with saturation mobility up to ~2.4 cm2/(V · s) and the ON/OFF-ratio of 107 were obtained after annealing at 300 °C. Devices connected as depletion-load nMOS inverters showed gain up to ~26 on a Si/SiO2 substrate, and an inverter on a flexible polyimide substrate with atomic layer deposited Al2O3 dielectric was demonstrated with a maximum gain of ~45
Original languageEnglish
Pages (from-to)445-448
JournalIEEE Electron Device Letters
Volume37
Issue number4
DOIs
Publication statusPublished - 2016
MoE publication typeA1 Journal article-refereed

Fingerprint

Thin film transistors
Printing
Metals
Substrates
Threshold voltage
Polyimides
Nitrates
Oxides
Oxide films
Nozzles
Multilayers
Annealing
Semiconductor materials
Fabrication

Keywords

  • depletion load nMOS
  • inkjet printing
  • metal oxide
  • thin-film transistor

Cite this

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title = "In2O3 thin-film transistors via inkjet printing for depletion-load nMOS inverters",
abstract = "Ability to digitally control the amount of a deposited material is one of the many advantages of inkjet printing. In this letter, we demonstrate the applicability of inkjet printing for the fabrication of depletion-load nMOS inverters based on metal oxide thin-film-transistors (TFTs) from printed metal oxide precursors where the threshold voltage of the TFTs is controlled by adjusting the thickness of the deposited semiconductor layer. Enhancement- and depletion-mode n-type In2O3 TFTs were fabricated from In-nitrate precursor using two printing strategies: 1) multilayer multinozzle printing and 2) single-layer single-nozzle printing in perpendicular or parallel to the TFT channel. TFTs with saturation mobility up to ~2.4 cm2/(V · s) and the ON/OFF-ratio of 107 were obtained after annealing at 300 °C. Devices connected as depletion-load nMOS inverters showed gain up to ~26 on a Si/SiO2 substrate, and an inverter on a flexible polyimide substrate with atomic layer deposited Al2O3 dielectric was demonstrated with a maximum gain of ~45",
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author = "Jaakko Lepp{\"a}niemi and Kim Eiroma and Majumdar, {Himadri S.} and Alastalo, {Ari T.}",
year = "2016",
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language = "English",
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pages = "445--448",
journal = "IEEE Electron Device Letters",
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In2O3 thin-film transistors via inkjet printing for depletion-load nMOS inverters. / Leppäniemi, Jaakko; Eiroma, Kim; Majumdar, Himadri S.; Alastalo, Ari T.

In: IEEE Electron Device Letters, Vol. 37, No. 4, 2016, p. 445-448.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

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AU - Eiroma, Kim

AU - Majumdar, Himadri S.

AU - Alastalo, Ari T.

PY - 2016

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AB - Ability to digitally control the amount of a deposited material is one of the many advantages of inkjet printing. In this letter, we demonstrate the applicability of inkjet printing for the fabrication of depletion-load nMOS inverters based on metal oxide thin-film-transistors (TFTs) from printed metal oxide precursors where the threshold voltage of the TFTs is controlled by adjusting the thickness of the deposited semiconductor layer. Enhancement- and depletion-mode n-type In2O3 TFTs were fabricated from In-nitrate precursor using two printing strategies: 1) multilayer multinozzle printing and 2) single-layer single-nozzle printing in perpendicular or parallel to the TFT channel. TFTs with saturation mobility up to ~2.4 cm2/(V · s) and the ON/OFF-ratio of 107 were obtained after annealing at 300 °C. Devices connected as depletion-load nMOS inverters showed gain up to ~26 on a Si/SiO2 substrate, and an inverter on a flexible polyimide substrate with atomic layer deposited Al2O3 dielectric was demonstrated with a maximum gain of ~45

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