InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range

B. Matveev; N. Zotova; Sergei Arcadievich Karandashov; M. Remennyi; N. Il'inskaya; Nikolai Matveevich Stus; V. Shustov; Georgii Nikolaevich Talalakin; Jouko Malinen

doi:10.1049/ip-opt:19982303

InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range

B. Matveev, N. Zotova, Sergei Arcadievich Karandashov, M. Remennyi, N. Il'inskaya, Nikolai Matveevich Stus, V. Shustov, Georgii Nikolaevich Talalakin, Jouko Malinen

Ioffe Institute

Research output: Contribution to journal › Article in a proceedings journal › Scientific › peer-review

35 Citations (Scopus)

Abstract

Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised with respect to methane (3.3 µm), carbon dioxide (4.3 µm) and nitric oxide (5.3 µm) optical detection. Output power as high as 50 µW (I = 1 A, 128 µs) and FWHM as small as 0.6 µm have been obtained for the first reported InAsSb LED emitting at 5.5 µm.

Original language	English
Pages (from-to)	254-256
Journal	IEE proceedings: Optoelectronics
Volume	145
Issue number	5
DOIs	https://doi.org/10.1049/ip-opt:19982303
Publication status	Published - 1998
MoE publication type	A4 Article in a conference publication
Event	2nd International Conference on Mid-IR Optoelectronics: Materials and Devices - Prague, Czech Republic Duration: 1 Mar 1998 → …

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@article{37a3819fce4d4753a34ca270dd52b53c,

title = "InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range",

abstract = "Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised with respect to methane (3.3 µm), carbon dioxide (4.3 µm) and nitric oxide (5.3 µm) optical detection. Output power as high as 50 µW (I = 1 A, 128 µs) and FWHM as small as 0.6 µm have been obtained for the first reported InAsSb LED emitting at 5.5 µm.",

author = "B. Matveev and N. Zotova and Karandashov, {Sergei Arcadievich} and M. Remennyi and N. Il'inskaya and Stus, {Nikolai Matveevich} and V. Shustov and Talalakin, {Georgii Nikolaevich} and Jouko Malinen",

year = "1998",

doi = "10.1049/ip-opt:19982303",

language = "English",

volume = "145",

pages = "254--256",

journal = "IEE proceedings: Optoelectronics",

issn = "1350-2433",

publisher = "John Wiley & Sons Inc.",

number = "5",

note = "2nd International Conference on Mid-IR Optoelectronics : Materials and Devices ; Conference date: 01-03-1998",

}

TY - JOUR

T1 - InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range

AU - Matveev, B.

AU - Zotova, N.

AU - Karandashov, Sergei Arcadievich

AU - Remennyi, M.

AU - Il'inskaya, N.

AU - Stus, Nikolai Matveevich

AU - Shustov, V.

AU - Talalakin, Georgii Nikolaevich

AU - Malinen, Jouko

PY - 1998

Y1 - 1998

N2 - Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised with respect to methane (3.3 µm), carbon dioxide (4.3 µm) and nitric oxide (5.3 µm) optical detection. Output power as high as 50 µW (I = 1 A, 128 µs) and FWHM as small as 0.6 µm have been obtained for the first reported InAsSb LED emitting at 5.5 µm.

AB - Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised with respect to methane (3.3 µm), carbon dioxide (4.3 µm) and nitric oxide (5.3 µm) optical detection. Output power as high as 50 µW (I = 1 A, 128 µs) and FWHM as small as 0.6 µm have been obtained for the first reported InAsSb LED emitting at 5.5 µm.

U2 - 10.1049/ip-opt:19982303

DO - 10.1049/ip-opt:19982303

M3 - Article in a proceedings journal

SN - 1350-2433

VL - 145

SP - 254

EP - 256

JO - IEE proceedings: Optoelectronics

JF - IEE proceedings: Optoelectronics

IS - 5

T2 - 2nd International Conference on Mid-IR Optoelectronics

Y2 - 1 March 1998

ER -

InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range

Abstract

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