InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range

B. Matveev, N. Zotova, Sergei Arcadievich Karandashov, M. Remennyi, N. Il'inskaya, Nikolai Matveevich Stus, V. Shustov, Georgii Nikolaevich Talalakin, Jouko Malinen

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

33 Citations (Scopus)

Abstract

Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised with respect to methane (3.3 µm), carbon dioxide (4.3 µm) and nitric oxide (5.3 µm) optical detection. Output power as high as 50 µW (I = 1 A, 128 µs) and FWHM as small as 0.6 µm have been obtained for the first reported InAsSb LED emitting at 5.5 µm.
Original languageEnglish
Pages (from-to)254-256
JournalIEE proceedings: Optoelectronics
Volume145
Issue number5
DOIs
Publication statusPublished - 1998
MoE publication typeA4 Article in a conference publication
Event2nd International Conference on Mid-IR Optoelectronics: Materials and Devices - Prague, Czech Republic
Duration: 1 Mar 1998 → …

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