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Keyphrases
Impurity Effect
100%
Impurity Concentration
100%
Growth Zone
100%
Ammonothermal GaN
100%
Optical Properties
66%
Spatially Resolved
66%
Free Carrier Concentration
66%
Concentration Variation
66%
High-resolution X-ray Diffraction (HRXRD)
66%
Cm(III)
66%
Structural Properties
33%
Impurities
33%
Electrical Properties
33%
Secondary Ion Mass Spectrometry
33%
Fourier Transform Infrared Spectroscopy (FT-IR)
33%
Oxygen Concentration
33%
Carbon Impurity
33%
Carbon Concentration
33%
High-crystalline
33%
Crystal Quality
33%
Growth Time
33%
Impurity Incorporation
33%
Infrared Study
33%
Photoluminescence Intensity
33%
Oxygen Impurity
33%
Silicon Concentration
33%
Growth Direction
33%
Small Length Scale
33%
Lattice Constant
33%
Incorporation Efficiency
33%
Bulk GaN
33%
Ammonothermal Method
33%
Boule
33%
GaN Growth
33%
Mass Measure
33%
Silicon Impurity
33%
Low-temperature Photoluminescence
33%
INIS
growth
100%
impurities
100%
zones
100%
gallium nitrides
100%
concentration
77%
variations
33%
oxygen
33%
silicon
22%
carbon
22%
optical properties
22%
photoluminescence
22%
resolution
22%
x-ray diffraction
22%
carriers
22%
efficiency
11%
low temperature
11%
strains
11%
length
11%
lattice parameters
11%
electrical properties
11%
ions
11%
crystals
11%
mass spectrometry
11%
fourier transform spectrometers
11%
Engineering
Ray Diffraction
100%
High Resolution
100%
Carrier Concentration
100%
Low-Temperature
50%
Length Scale
50%
Carbon Concentration
50%
Oxygen Concentration
50%
Promising Candidate
50%
Crystalline Quality
50%
Incorporation Efficiency
50%
Ammonothermal Method
50%
FTIR Spectroscopy
50%
Lattice Constant
50%
Material Science
Carrier Concentration
100%
Photoluminescence
100%
Silicon
100%
Optical Property
100%
Lattice Constant
50%
Fourier Transform Infrared Spectroscopy
50%
Secondary Ion Mass Spectrometry
50%