Incorporation of group V elements in gas-source molecular beam epitaxy of GaxIn1-xAsyP1-ywith x ≈ 0.15 and y ≈ 0.33

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Abstract

The incorporation of group V materials in GaInAsP grown on InP substrates by gas-source molecular beam epitaxy was studied. The study concentrated on the alloys with energy gaps corresponding to wavelengths near 1.1 μm. An abrupt change was earlier observed in the alloy composition of GaInAsP (λ≈1.05−1.3μm) as a function of substrate temperature. In this paper, I will present new results concerning the abrupt change. Reflection high-energy diffraction was used to examine the changes in the surface reconstruction of the growing layers in order to illuminate the origin of the abrupt change.
Original languageEnglish
Pages (from-to)133-140
JournalJournal of Crystal Growth
Volume123
Issue number1-2
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

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Gas source molecular beam epitaxy
molecular beam epitaxy
Surface reconstruction
Substrates
gases
Energy gap
Diffraction
Wavelength
Chemical analysis
diffraction
wavelengths
Temperature
temperature
energy

Cite this

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title = "Incorporation of group V elements in gas-source molecular beam epitaxy of GaxIn1-xAsyP1-ywith x ≈ 0.15 and y ≈ 0.33",
abstract = "The incorporation of group V materials in GaInAsP grown on InP substrates by gas-source molecular beam epitaxy was studied. The study concentrated on the alloys with energy gaps corresponding to wavelengths near 1.1 μm. An abrupt change was earlier observed in the alloy composition of GaInAsP (λ≈1.05−1.3μm) as a function of substrate temperature. In this paper, I will present new results concerning the abrupt change. Reflection high-energy diffraction was used to examine the changes in the surface reconstruction of the growing layers in order to illuminate the origin of the abrupt change.",
author = "K. Tappura",
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language = "English",
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pages = "133--140",
journal = "Journal of Crystal Growth",
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number = "1-2",

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Incorporation of group V elements in gas-source molecular beam epitaxy of GaxIn1-xAsyP1-ywith x ≈ 0.15 and y ≈ 0.33. / Tappura, K.

In: Journal of Crystal Growth, Vol. 123, No. 1-2, 1992, p. 133-140.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Incorporation of group V elements in gas-source molecular beam epitaxy of GaxIn1-xAsyP1-ywith x ≈ 0.15 and y ≈ 0.33

AU - Tappura, K.

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N2 - The incorporation of group V materials in GaInAsP grown on InP substrates by gas-source molecular beam epitaxy was studied. The study concentrated on the alloys with energy gaps corresponding to wavelengths near 1.1 μm. An abrupt change was earlier observed in the alloy composition of GaInAsP (λ≈1.05−1.3μm) as a function of substrate temperature. In this paper, I will present new results concerning the abrupt change. Reflection high-energy diffraction was used to examine the changes in the surface reconstruction of the growing layers in order to illuminate the origin of the abrupt change.

AB - The incorporation of group V materials in GaInAsP grown on InP substrates by gas-source molecular beam epitaxy was studied. The study concentrated on the alloys with energy gaps corresponding to wavelengths near 1.1 μm. An abrupt change was earlier observed in the alloy composition of GaInAsP (λ≈1.05−1.3μm) as a function of substrate temperature. In this paper, I will present new results concerning the abrupt change. Reflection high-energy diffraction was used to examine the changes in the surface reconstruction of the growing layers in order to illuminate the origin of the abrupt change.

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