Incorporation of group V elements in gas-source molecular beam epitaxy of GaxIn1-xAsyP1-ywith x ≈ 0.15 and y ≈ 0.33

Engineering & Materials Science

• Gas source molecular beam epitaxy 100%
• Substrates 32%
• Surface reconstruction 30%
• Energy gap 26%
• Diffraction 24%
• Wavelength 20%
• Chemical analysis 14%
• Temperature 9%

Chemical Compounds

• Molecular Beam Epitaxy 66%
• Alloy 32%
• Surface Reconstruction 31%
• Reflection 18%
• Band Gap 17%
• Wavelength 16%

Physics & Astronomy

• molecular beam epitaxy 39%
• gases 23%
• diffraction 12%
• wavelengths 10%
• temperature 6%
• energy 6%