Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips

Hannele Heikkinen, Akiko Gädda, Jaakko Salonen, Philippe Monnoyer, L. Tlustos, M. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

4 Citations (Scopus)

Abstract

The article describes a low temperature bump bonding process to assemble CdTe sensors to readout chips. The solder material used is In-Sn with a theoretical melting point of 118 C. The solder was tested using Timepix readout chips with 30-m diameter bumps and a 55-m pitch bonded to CdTe sensors. The first results from these assemblies show very good bumping and bonding yield
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publicationIEEE Nuclear Science Symposuim & Medical Imaging Conference, NSSMIC 2010
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages3891-3895
ISBN (Electronic)978-1-4244-9105-6
ISBN (Print)978-1-4244-9106-3
DOIs
Publication statusPublished - 2010
MoE publication typeA4 Article in a conference publication
Event2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, NSS/MIC 2010 and 17th International Workshop on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, RTSD 2010 - Knoxville, TN, United States
Duration: 30 Oct 20106 Nov 2010

Conference

Conference2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, NSS/MIC 2010 and 17th International Workshop on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, RTSD 2010
Abbreviated titleNSS/MIC 2010 ; RTSD 2010
CountryUnited States
CityKnoxville, TN
Period30/10/106/11/10

Fingerprint

Soldering alloys
Indium
Tin
Sensors
Melting point
Temperature

Cite this

Heikkinen, H., Gädda, A., Salonen, J., Monnoyer, P., Tlustos, L., & Campbell, M. (2010). Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips. In Proceedings: IEEE Nuclear Science Symposuim & Medical Imaging Conference, NSSMIC 2010 (pp. 3891-3895). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/NSSMIC.2010.5874544
Heikkinen, Hannele ; Gädda, Akiko ; Salonen, Jaakko ; Monnoyer, Philippe ; Tlustos, L. ; Campbell, M. / Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips. Proceedings: IEEE Nuclear Science Symposuim & Medical Imaging Conference, NSSMIC 2010. IEEE Institute of Electrical and Electronic Engineers , 2010. pp. 3891-3895
@inproceedings{c73b8064daf34bb58f04f569827a0e0a,
title = "Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips",
abstract = "The article describes a low temperature bump bonding process to assemble CdTe sensors to readout chips. The solder material used is In-Sn with a theoretical melting point of 118 C. The solder was tested using Timepix readout chips with 30-m diameter bumps and a 55-m pitch bonded to CdTe sensors. The first results from these assemblies show very good bumping and bonding yield",
author = "Hannele Heikkinen and Akiko G{\"a}dda and Jaakko Salonen and Philippe Monnoyer and L. Tlustos and M. Campbell",
year = "2010",
doi = "10.1109/NSSMIC.2010.5874544",
language = "English",
isbn = "978-1-4244-9106-3",
pages = "3891--3895",
booktitle = "Proceedings",
publisher = "IEEE Institute of Electrical and Electronic Engineers",
address = "United States",

}

Heikkinen, H, Gädda, A, Salonen, J, Monnoyer, P, Tlustos, L & Campbell, M 2010, Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips. in Proceedings: IEEE Nuclear Science Symposuim & Medical Imaging Conference, NSSMIC 2010. IEEE Institute of Electrical and Electronic Engineers , pp. 3891-3895, 2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, NSS/MIC 2010 and 17th International Workshop on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, RTSD 2010, Knoxville, TN, United States, 30/10/10. https://doi.org/10.1109/NSSMIC.2010.5874544

Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips. / Heikkinen, Hannele; Gädda, Akiko; Salonen, Jaakko; Monnoyer, Philippe; Tlustos, L.; Campbell, M.

Proceedings: IEEE Nuclear Science Symposuim & Medical Imaging Conference, NSSMIC 2010. IEEE Institute of Electrical and Electronic Engineers , 2010. p. 3891-3895.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips

AU - Heikkinen, Hannele

AU - Gädda, Akiko

AU - Salonen, Jaakko

AU - Monnoyer, Philippe

AU - Tlustos, L.

AU - Campbell, M.

PY - 2010

Y1 - 2010

N2 - The article describes a low temperature bump bonding process to assemble CdTe sensors to readout chips. The solder material used is In-Sn with a theoretical melting point of 118 C. The solder was tested using Timepix readout chips with 30-m diameter bumps and a 55-m pitch bonded to CdTe sensors. The first results from these assemblies show very good bumping and bonding yield

AB - The article describes a low temperature bump bonding process to assemble CdTe sensors to readout chips. The solder material used is In-Sn with a theoretical melting point of 118 C. The solder was tested using Timepix readout chips with 30-m diameter bumps and a 55-m pitch bonded to CdTe sensors. The first results from these assemblies show very good bumping and bonding yield

U2 - 10.1109/NSSMIC.2010.5874544

DO - 10.1109/NSSMIC.2010.5874544

M3 - Conference article in proceedings

SN - 978-1-4244-9106-3

SP - 3891

EP - 3895

BT - Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Heikkinen H, Gädda A, Salonen J, Monnoyer P, Tlustos L, Campbell M. Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips. In Proceedings: IEEE Nuclear Science Symposuim & Medical Imaging Conference, NSSMIC 2010. IEEE Institute of Electrical and Electronic Engineers . 2010. p. 3891-3895 https://doi.org/10.1109/NSSMIC.2010.5874544