Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips

Hannele Heikkinen; Akiko Gädda; Jaakko Salonen; Philippe Monnoyer; L. Tlustos; M. Campbell

doi:10.1109/NSSMIC.2010.5874544

Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips

Hannele Heikkinen, Akiko Gädda, Jaakko Salonen, Philippe Monnoyer, L. Tlustos, M. Campbell

European Organization for Nuclear Research (CERN)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

4 Citations (Scopus)

Abstract

The article describes a low temperature bump bonding process to assemble CdTe sensors to readout chips. The solder material used is In-Sn with a theoretical melting point of 118 C. The solder was tested using Timepix readout chips with 30-m diameter bumps and a 55-m pitch bonded to CdTe sensors. The first results from these assemblies show very good bumping and bonding yield

Original language	English
Title of host publication	Proceedings
Subtitle of host publication	IEEE Nuclear Science Symposuim & Medical Imaging Conference, NSSMIC 2010
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	3891-3895
ISBN (Electronic)	978-1-4244-9105-6
ISBN (Print)	978-1-4244-9106-3
DOIs	https://doi.org/10.1109/NSSMIC.2010.5874544
Publication status	Published - 2010
MoE publication type	A4 Article in a conference publication
Event	2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, NSS/MIC 2010 and 17th International Workshop on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, RTSD 2010 - Knoxville, TN, United States Duration: 30 Oct 2010 → 6 Nov 2010

Conference

Conference	2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, NSS/MIC 2010 and 17th International Workshop on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, RTSD 2010
Abbreviated title	NSS/MIC 2010 ; RTSD 2010
Country/Territory	United States
City	Knoxville, TN
Period	30/10/10 → 6/11/10

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10.1109/NSSMIC.2010.5874544

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Heikkinen, H., Gädda, A., Salonen, J., Monnoyer, P., Tlustos, L., & Campbell, M. (2010). Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips. In Proceedings: IEEE Nuclear Science Symposuim & Medical Imaging Conference, NSSMIC 2010 (pp. 3891-3895). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/NSSMIC.2010.5874544

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title = "Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips",

abstract = "The article describes a low temperature bump bonding process to assemble CdTe sensors to readout chips. The solder material used is In-Sn with a theoretical melting point of 118 C. The solder was tested using Timepix readout chips with 30-m diameter bumps and a 55-m pitch bonded to CdTe sensors. The first results from these assemblies show very good bumping and bonding yield",

author = "Hannele Heikkinen and Akiko G{\"a}dda and Jaakko Salonen and Philippe Monnoyer and L. Tlustos and M. Campbell",

year = "2010",

doi = "10.1109/NSSMIC.2010.5874544",

language = "English",

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booktitle = "Proceedings",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, NSS/MIC 2010 and 17th International Workshop on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, RTSD 2010, NSS/MIC 2010 ; RTSD 2010 ; Conference date: 30-10-2010 Through 06-11-2010",

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Heikkinen, H, Gädda, A, Salonen, J, Monnoyer, P, Tlustos, L & Campbell, M 2010, Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips. in Proceedings: IEEE Nuclear Science Symposuim & Medical Imaging Conference, NSSMIC 2010. IEEE Institute of Electrical and Electronic Engineers, pp. 3891-3895, 2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, NSS/MIC 2010 and 17th International Workshop on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, RTSD 2010, Knoxville, TN, United States, 30/10/10. https://doi.org/10.1109/NSSMIC.2010.5874544

Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips. / Heikkinen, Hannele; Gädda, Akiko; Salonen, Jaakko et al.
Proceedings: IEEE Nuclear Science Symposuim & Medical Imaging Conference, NSSMIC 2010. IEEE Institute of Electrical and Electronic Engineers, 2010. p. 3891-3895.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips

AU - Heikkinen, Hannele

AU - Gädda, Akiko

AU - Salonen, Jaakko

AU - Monnoyer, Philippe

AU - Tlustos, L.

AU - Campbell, M.

PY - 2010

Y1 - 2010

N2 - The article describes a low temperature bump bonding process to assemble CdTe sensors to readout chips. The solder material used is In-Sn with a theoretical melting point of 118 C. The solder was tested using Timepix readout chips with 30-m diameter bumps and a 55-m pitch bonded to CdTe sensors. The first results from these assemblies show very good bumping and bonding yield

AB - The article describes a low temperature bump bonding process to assemble CdTe sensors to readout chips. The solder material used is In-Sn with a theoretical melting point of 118 C. The solder was tested using Timepix readout chips with 30-m diameter bumps and a 55-m pitch bonded to CdTe sensors. The first results from these assemblies show very good bumping and bonding yield

U2 - 10.1109/NSSMIC.2010.5874544

DO - 10.1109/NSSMIC.2010.5874544

M3 - Conference article in proceedings

SN - 978-1-4244-9106-3

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EP - 3895

BT - Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, NSS/MIC 2010 and 17th International Workshop on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, RTSD 2010

Y2 - 30 October 2010 through 6 November 2010

ER -

Indium-tin bump deposition for the hybridization of CdTe sensors and readout chips

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