Inductively coupled plasma etching of amorphous Al2O3 and TiO2 mask layers grown by atomic layer deposition

James Dekker (Corresponding Author), Kai Kolari, Riikka Puurunen

Research output: Contribution to journalArticleScientificpeer-review

32 Citations (Scopus)

Abstract

Al2O3 and TiO2 deposited by atomic layer deposition are evaluated as etch masks for dry etch processes in an inductively coupled plasma reactor using the Bosch process. In the inductively coupled plasma chamber during deep silicon etching, because of the chemical nature of the etch process and the inert nature of Al2O3, the result is exceptional selectivity for silicon over as-deposited Al2O3, particularly at relatively low bias and high pressures used for through-wafer etching. TiO2 is less resistant and appears to suffer more from chemical attack. In both cases, etch rate increases slowly with increasing rf bias. However, there is a sharp discontinuity in the etch rate of Al2O3 when the bias power is operated in a pulsed low-frequency mode. This is thought to be due to increased sputtering from heavier ions. Preliminary studies indicate the etching conditions for Al2O3 may be extended into a dielectric etch regime requiring more study.
Original languageEnglish
Pages (from-to)2350-2355
Number of pages6
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume24
Issue number5
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

Fingerprint

Atomic layer deposition
Plasma etching
Inductively coupled plasma
Masks
Etching
Chemical attack
Silicon
Heavy ions
Sputtering

Keywords

  • alumina
  • titanium compounds
  • masks
  • dielectric thin films
  • thin films
  • amorphous state
  • sputter etching
  • atomic layer deposition

Cite this

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title = "Inductively coupled plasma etching of amorphous Al2O3 and TiO2 mask layers grown by atomic layer deposition",
abstract = "Al2O3 and TiO2 deposited by atomic layer deposition are evaluated as etch masks for dry etch processes in an inductively coupled plasma reactor using the Bosch process. In the inductively coupled plasma chamber during deep silicon etching, because of the chemical nature of the etch process and the inert nature of Al2O3, the result is exceptional selectivity for silicon over as-deposited Al2O3, particularly at relatively low bias and high pressures used for through-wafer etching. TiO2 is less resistant and appears to suffer more from chemical attack. In both cases, etch rate increases slowly with increasing rf bias. However, there is a sharp discontinuity in the etch rate of Al2O3 when the bias power is operated in a pulsed low-frequency mode. This is thought to be due to increased sputtering from heavier ions. Preliminary studies indicate the etching conditions for Al2O3 may be extended into a dielectric etch regime requiring more study.",
keywords = "alumina, titanium compounds, masks, dielectric thin films, thin films, amorphous state, sputter etching, atomic layer deposition",
author = "James Dekker and Kai Kolari and Riikka Puurunen",
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doi = "10.1116/1.2353844",
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journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",
issn = "2166-2746",
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Inductively coupled plasma etching of amorphous Al2O3 and TiO2 mask layers grown by atomic layer deposition. / Dekker, James (Corresponding Author); Kolari, Kai; Puurunen, Riikka.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 24, No. 5, 2006, p. 2350-2355.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Inductively coupled plasma etching of amorphous Al2O3 and TiO2 mask layers grown by atomic layer deposition

AU - Dekker, James

AU - Kolari, Kai

AU - Puurunen, Riikka

PY - 2006

Y1 - 2006

N2 - Al2O3 and TiO2 deposited by atomic layer deposition are evaluated as etch masks for dry etch processes in an inductively coupled plasma reactor using the Bosch process. In the inductively coupled plasma chamber during deep silicon etching, because of the chemical nature of the etch process and the inert nature of Al2O3, the result is exceptional selectivity for silicon over as-deposited Al2O3, particularly at relatively low bias and high pressures used for through-wafer etching. TiO2 is less resistant and appears to suffer more from chemical attack. In both cases, etch rate increases slowly with increasing rf bias. However, there is a sharp discontinuity in the etch rate of Al2O3 when the bias power is operated in a pulsed low-frequency mode. This is thought to be due to increased sputtering from heavier ions. Preliminary studies indicate the etching conditions for Al2O3 may be extended into a dielectric etch regime requiring more study.

AB - Al2O3 and TiO2 deposited by atomic layer deposition are evaluated as etch masks for dry etch processes in an inductively coupled plasma reactor using the Bosch process. In the inductively coupled plasma chamber during deep silicon etching, because of the chemical nature of the etch process and the inert nature of Al2O3, the result is exceptional selectivity for silicon over as-deposited Al2O3, particularly at relatively low bias and high pressures used for through-wafer etching. TiO2 is less resistant and appears to suffer more from chemical attack. In both cases, etch rate increases slowly with increasing rf bias. However, there is a sharp discontinuity in the etch rate of Al2O3 when the bias power is operated in a pulsed low-frequency mode. This is thought to be due to increased sputtering from heavier ions. Preliminary studies indicate the etching conditions for Al2O3 may be extended into a dielectric etch regime requiring more study.

KW - alumina

KW - titanium compounds

KW - masks

KW - dielectric thin films

KW - thin films

KW - amorphous state

KW - sputter etching

KW - atomic layer deposition

U2 - 10.1116/1.2353844

DO - 10.1116/1.2353844

M3 - Article

VL - 24

SP - 2350

EP - 2355

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

SN - 2166-2746

IS - 5

ER -