Abstract
Original language | English |
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Pages (from-to) | 2350-2355 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics |
Volume | 24 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2006 |
MoE publication type | A1 Journal article-refereed |
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Keywords
- alumina
- titanium compounds
- masks
- dielectric thin films
- thin films
- amorphous state
- sputter etching
- atomic layer deposition
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Inductively coupled plasma etching of amorphous Al2O3 and TiO2 mask layers grown by atomic layer deposition. / Dekker, James (Corresponding Author); Kolari, Kai; Puurunen, Riikka.
In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 24, No. 5, 2006, p. 2350-2355.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Inductively coupled plasma etching of amorphous Al2O3 and TiO2 mask layers grown by atomic layer deposition
AU - Dekker, James
AU - Kolari, Kai
AU - Puurunen, Riikka
PY - 2006
Y1 - 2006
N2 - Al2O3 and TiO2 deposited by atomic layer deposition are evaluated as etch masks for dry etch processes in an inductively coupled plasma reactor using the Bosch process. In the inductively coupled plasma chamber during deep silicon etching, because of the chemical nature of the etch process and the inert nature of Al2O3, the result is exceptional selectivity for silicon over as-deposited Al2O3, particularly at relatively low bias and high pressures used for through-wafer etching. TiO2 is less resistant and appears to suffer more from chemical attack. In both cases, etch rate increases slowly with increasing rf bias. However, there is a sharp discontinuity in the etch rate of Al2O3 when the bias power is operated in a pulsed low-frequency mode. This is thought to be due to increased sputtering from heavier ions. Preliminary studies indicate the etching conditions for Al2O3 may be extended into a dielectric etch regime requiring more study.
AB - Al2O3 and TiO2 deposited by atomic layer deposition are evaluated as etch masks for dry etch processes in an inductively coupled plasma reactor using the Bosch process. In the inductively coupled plasma chamber during deep silicon etching, because of the chemical nature of the etch process and the inert nature of Al2O3, the result is exceptional selectivity for silicon over as-deposited Al2O3, particularly at relatively low bias and high pressures used for through-wafer etching. TiO2 is less resistant and appears to suffer more from chemical attack. In both cases, etch rate increases slowly with increasing rf bias. However, there is a sharp discontinuity in the etch rate of Al2O3 when the bias power is operated in a pulsed low-frequency mode. This is thought to be due to increased sputtering from heavier ions. Preliminary studies indicate the etching conditions for Al2O3 may be extended into a dielectric etch regime requiring more study.
KW - alumina
KW - titanium compounds
KW - masks
KW - dielectric thin films
KW - thin films
KW - amorphous state
KW - sputter etching
KW - atomic layer deposition
U2 - 10.1116/1.2353844
DO - 10.1116/1.2353844
M3 - Article
VL - 24
SP - 2350
EP - 2355
JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
SN - 2166-2746
IS - 5
ER -