Inelastic light scattering by longitudinal acoustic phonons in thin silicon layers: From membranes to silicon-on-insulator structures

J. Groenen, F. Poinsotte, A. Zwick, C. M. Sotomayor Torres, Mika Prunnila, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    46 Citations (Scopus)

    Abstract

    We report on inelastic light scattering (ILS) by longitudinal acoustic phonons in thin Si(001) layers (thickness ≈ 30 nm). Calculations based on the photoelastic model are presented for unsupported and supported layers. We consider ILS by standing longitudinal acoustic modes along [001]. Our calculations take into account the spatial modulations of acoustic, optical, and photoelastic properties. We successively identify their contributions to the scattering efficiency and find that there is a strong interplay between acoustic, optical, and photoelastic cavity effects. The need to consider optical cavity effects is pointed out. It is shown here that they can be included in a convenient way in the scattered electromagnetic fields, by solving the wave equation in the presence of the polarization induced by the photoelastic effect. A detailed analysis of the scattering efficiency (peak frequencies, intensities, and widths) is presented. The dependence of the ILS spectra on film thickness and on substrate characteristics are addressed. Calculations are successfully compared to experimental data for thin Si membranes and silicon-on-insulator structures. It is shown that the inelastic light scattering involves a set of discrete quantized acoustic modes for membranes and a continuum of acoustic modes for silicon-on-insulator structures.
    Original languageEnglish
    Article number045420
    Number of pages12
    JournalPhysical Review B: Condensed Matter and Materials Physics
    Volume77
    Issue number4
    DOIs
    Publication statusPublished - 2008
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Inelastic scattering
    Silicon
    Phonons
    Light scattering
    inelastic scattering
    phonons
    light scattering
    Acoustics
    insulators
    membranes
    Membranes
    acoustics
    silicon
    Scattering
    Photoelasticity
    Wave equations
    cavities
    Electromagnetic fields
    acoustic properties
    Film thickness

    Keywords

    • elemental semiconductors
    • light scattering
    • membranes
    • phonons
    • photoelasticity
    • Raman spectra
    • semiconductor thin films
    • thin films
    • silicon
    • silicon-on-insulator
    • SOI

    Cite this

    @article{c4a5675b2b5d4364a7626d998f5a1612,
    title = "Inelastic light scattering by longitudinal acoustic phonons in thin silicon layers: From membranes to silicon-on-insulator structures",
    abstract = "We report on inelastic light scattering (ILS) by longitudinal acoustic phonons in thin Si(001) layers (thickness ≈ 30 nm). Calculations based on the photoelastic model are presented for unsupported and supported layers. We consider ILS by standing longitudinal acoustic modes along [001]. Our calculations take into account the spatial modulations of acoustic, optical, and photoelastic properties. We successively identify their contributions to the scattering efficiency and find that there is a strong interplay between acoustic, optical, and photoelastic cavity effects. The need to consider optical cavity effects is pointed out. It is shown here that they can be included in a convenient way in the scattered electromagnetic fields, by solving the wave equation in the presence of the polarization induced by the photoelastic effect. A detailed analysis of the scattering efficiency (peak frequencies, intensities, and widths) is presented. The dependence of the ILS spectra on film thickness and on substrate characteristics are addressed. Calculations are successfully compared to experimental data for thin Si membranes and silicon-on-insulator structures. It is shown that the inelastic light scattering involves a set of discrete quantized acoustic modes for membranes and a continuum of acoustic modes for silicon-on-insulator structures.",
    keywords = "elemental semiconductors, light scattering, membranes, phonons, photoelasticity, Raman spectra, semiconductor thin films, thin films, silicon, silicon-on-insulator, SOI",
    author = "J. Groenen and F. Poinsotte and A. Zwick and {Sotomayor Torres}, {C. M.} and Mika Prunnila and Jouni Ahopelto",
    year = "2008",
    doi = "10.1103/PhysRevB.77.045420",
    language = "English",
    volume = "77",
    journal = "Physical Review B",
    issn = "2469-9950",
    publisher = "American Physical Society",
    number = "4",

    }

    Inelastic light scattering by longitudinal acoustic phonons in thin silicon layers : From membranes to silicon-on-insulator structures. / Groenen, J.; Poinsotte, F.; Zwick, A.; Sotomayor Torres, C. M.; Prunnila, Mika; Ahopelto, Jouni.

    In: Physical Review B: Condensed Matter and Materials Physics, Vol. 77, No. 4, 045420, 2008.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Inelastic light scattering by longitudinal acoustic phonons in thin silicon layers

    T2 - From membranes to silicon-on-insulator structures

    AU - Groenen, J.

    AU - Poinsotte, F.

    AU - Zwick, A.

    AU - Sotomayor Torres, C. M.

    AU - Prunnila, Mika

    AU - Ahopelto, Jouni

    PY - 2008

    Y1 - 2008

    N2 - We report on inelastic light scattering (ILS) by longitudinal acoustic phonons in thin Si(001) layers (thickness ≈ 30 nm). Calculations based on the photoelastic model are presented for unsupported and supported layers. We consider ILS by standing longitudinal acoustic modes along [001]. Our calculations take into account the spatial modulations of acoustic, optical, and photoelastic properties. We successively identify their contributions to the scattering efficiency and find that there is a strong interplay between acoustic, optical, and photoelastic cavity effects. The need to consider optical cavity effects is pointed out. It is shown here that they can be included in a convenient way in the scattered electromagnetic fields, by solving the wave equation in the presence of the polarization induced by the photoelastic effect. A detailed analysis of the scattering efficiency (peak frequencies, intensities, and widths) is presented. The dependence of the ILS spectra on film thickness and on substrate characteristics are addressed. Calculations are successfully compared to experimental data for thin Si membranes and silicon-on-insulator structures. It is shown that the inelastic light scattering involves a set of discrete quantized acoustic modes for membranes and a continuum of acoustic modes for silicon-on-insulator structures.

    AB - We report on inelastic light scattering (ILS) by longitudinal acoustic phonons in thin Si(001) layers (thickness ≈ 30 nm). Calculations based on the photoelastic model are presented for unsupported and supported layers. We consider ILS by standing longitudinal acoustic modes along [001]. Our calculations take into account the spatial modulations of acoustic, optical, and photoelastic properties. We successively identify their contributions to the scattering efficiency and find that there is a strong interplay between acoustic, optical, and photoelastic cavity effects. The need to consider optical cavity effects is pointed out. It is shown here that they can be included in a convenient way in the scattered electromagnetic fields, by solving the wave equation in the presence of the polarization induced by the photoelastic effect. A detailed analysis of the scattering efficiency (peak frequencies, intensities, and widths) is presented. The dependence of the ILS spectra on film thickness and on substrate characteristics are addressed. Calculations are successfully compared to experimental data for thin Si membranes and silicon-on-insulator structures. It is shown that the inelastic light scattering involves a set of discrete quantized acoustic modes for membranes and a continuum of acoustic modes for silicon-on-insulator structures.

    KW - elemental semiconductors

    KW - light scattering

    KW - membranes

    KW - phonons

    KW - photoelasticity

    KW - Raman spectra

    KW - semiconductor thin films

    KW - thin films

    KW - silicon

    KW - silicon-on-insulator

    KW - SOI

    U2 - 10.1103/PhysRevB.77.045420

    DO - 10.1103/PhysRevB.77.045420

    M3 - Article

    VL - 77

    JO - Physical Review B

    JF - Physical Review B

    SN - 2469-9950

    IS - 4

    M1 - 045420

    ER -