Inelastic light scattering by longitudinal acoustic phonons in thin silicon layers

From membranes to silicon-on-insulator structures

J. Groenen, F. Poinsotte, A. Zwick, C. M. Sotomayor Torres, Mika Prunnila, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

46 Citations (Scopus)

Abstract

We report on inelastic light scattering (ILS) by longitudinal acoustic phonons in thin Si(001) layers (thickness ≈ 30 nm). Calculations based on the photoelastic model are presented for unsupported and supported layers. We consider ILS by standing longitudinal acoustic modes along [001]. Our calculations take into account the spatial modulations of acoustic, optical, and photoelastic properties. We successively identify their contributions to the scattering efficiency and find that there is a strong interplay between acoustic, optical, and photoelastic cavity effects. The need to consider optical cavity effects is pointed out. It is shown here that they can be included in a convenient way in the scattered electromagnetic fields, by solving the wave equation in the presence of the polarization induced by the photoelastic effect. A detailed analysis of the scattering efficiency (peak frequencies, intensities, and widths) is presented. The dependence of the ILS spectra on film thickness and on substrate characteristics are addressed. Calculations are successfully compared to experimental data for thin Si membranes and silicon-on-insulator structures. It is shown that the inelastic light scattering involves a set of discrete quantized acoustic modes for membranes and a continuum of acoustic modes for silicon-on-insulator structures.
Original languageEnglish
Article number045420
Number of pages12
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume77
Issue number4
DOIs
Publication statusPublished - 2008
MoE publication typeA1 Journal article-refereed

Fingerprint

Inelastic scattering
Silicon
Phonons
Light scattering
inelastic scattering
phonons
light scattering
Acoustics
insulators
membranes
Membranes
acoustics
silicon
Scattering
Photoelasticity
Wave equations
cavities
Electromagnetic fields
acoustic properties
Film thickness

Keywords

  • elemental semiconductors
  • light scattering
  • membranes
  • phonons
  • photoelasticity
  • Raman spectra
  • semiconductor thin films
  • thin films
  • silicon
  • silicon-on-insulator
  • SOI

Cite this

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title = "Inelastic light scattering by longitudinal acoustic phonons in thin silicon layers: From membranes to silicon-on-insulator structures",
abstract = "We report on inelastic light scattering (ILS) by longitudinal acoustic phonons in thin Si(001) layers (thickness ≈ 30 nm). Calculations based on the photoelastic model are presented for unsupported and supported layers. We consider ILS by standing longitudinal acoustic modes along [001]. Our calculations take into account the spatial modulations of acoustic, optical, and photoelastic properties. We successively identify their contributions to the scattering efficiency and find that there is a strong interplay between acoustic, optical, and photoelastic cavity effects. The need to consider optical cavity effects is pointed out. It is shown here that they can be included in a convenient way in the scattered electromagnetic fields, by solving the wave equation in the presence of the polarization induced by the photoelastic effect. A detailed analysis of the scattering efficiency (peak frequencies, intensities, and widths) is presented. The dependence of the ILS spectra on film thickness and on substrate characteristics are addressed. Calculations are successfully compared to experimental data for thin Si membranes and silicon-on-insulator structures. It is shown that the inelastic light scattering involves a set of discrete quantized acoustic modes for membranes and a continuum of acoustic modes for silicon-on-insulator structures.",
keywords = "elemental semiconductors, light scattering, membranes, phonons, photoelasticity, Raman spectra, semiconductor thin films, thin films, silicon, silicon-on-insulator, SOI",
author = "J. Groenen and F. Poinsotte and A. Zwick and {Sotomayor Torres}, {C. M.} and Mika Prunnila and Jouni Ahopelto",
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language = "English",
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Inelastic light scattering by longitudinal acoustic phonons in thin silicon layers : From membranes to silicon-on-insulator structures. / Groenen, J.; Poinsotte, F.; Zwick, A.; Sotomayor Torres, C. M.; Prunnila, Mika; Ahopelto, Jouni.

In: Physical Review B: Condensed Matter and Materials Physics, Vol. 77, No. 4, 045420, 2008.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Inelastic light scattering by longitudinal acoustic phonons in thin silicon layers

T2 - From membranes to silicon-on-insulator structures

AU - Groenen, J.

AU - Poinsotte, F.

AU - Zwick, A.

AU - Sotomayor Torres, C. M.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

PY - 2008

Y1 - 2008

N2 - We report on inelastic light scattering (ILS) by longitudinal acoustic phonons in thin Si(001) layers (thickness ≈ 30 nm). Calculations based on the photoelastic model are presented for unsupported and supported layers. We consider ILS by standing longitudinal acoustic modes along [001]. Our calculations take into account the spatial modulations of acoustic, optical, and photoelastic properties. We successively identify their contributions to the scattering efficiency and find that there is a strong interplay between acoustic, optical, and photoelastic cavity effects. The need to consider optical cavity effects is pointed out. It is shown here that they can be included in a convenient way in the scattered electromagnetic fields, by solving the wave equation in the presence of the polarization induced by the photoelastic effect. A detailed analysis of the scattering efficiency (peak frequencies, intensities, and widths) is presented. The dependence of the ILS spectra on film thickness and on substrate characteristics are addressed. Calculations are successfully compared to experimental data for thin Si membranes and silicon-on-insulator structures. It is shown that the inelastic light scattering involves a set of discrete quantized acoustic modes for membranes and a continuum of acoustic modes for silicon-on-insulator structures.

AB - We report on inelastic light scattering (ILS) by longitudinal acoustic phonons in thin Si(001) layers (thickness ≈ 30 nm). Calculations based on the photoelastic model are presented for unsupported and supported layers. We consider ILS by standing longitudinal acoustic modes along [001]. Our calculations take into account the spatial modulations of acoustic, optical, and photoelastic properties. We successively identify their contributions to the scattering efficiency and find that there is a strong interplay between acoustic, optical, and photoelastic cavity effects. The need to consider optical cavity effects is pointed out. It is shown here that they can be included in a convenient way in the scattered electromagnetic fields, by solving the wave equation in the presence of the polarization induced by the photoelastic effect. A detailed analysis of the scattering efficiency (peak frequencies, intensities, and widths) is presented. The dependence of the ILS spectra on film thickness and on substrate characteristics are addressed. Calculations are successfully compared to experimental data for thin Si membranes and silicon-on-insulator structures. It is shown that the inelastic light scattering involves a set of discrete quantized acoustic modes for membranes and a continuum of acoustic modes for silicon-on-insulator structures.

KW - elemental semiconductors

KW - light scattering

KW - membranes

KW - phonons

KW - photoelasticity

KW - Raman spectra

KW - semiconductor thin films

KW - thin films

KW - silicon

KW - silicon-on-insulator

KW - SOI

U2 - 10.1103/PhysRevB.77.045420

DO - 10.1103/PhysRevB.77.045420

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JO - Physical Review B

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SN - 2469-9950

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