Abstract
| Original language | English |
|---|---|
| Article number | 3383 |
| Journal | Applied Physics Letters |
| Volume | 68 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 1996 |
| MoE publication type | A1 Journal article-refereed |
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Influence of aging on the performance of solid source molecular beam epitaxy grown GaInP/AlGaInP quantum well lasers. / Tappura, Kirsi; Aarik, Jaan; Nurmi, Tero; Pessa, Markus.
In: Applied Physics Letters, Vol. 68, No. 24, 3383, 1996.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Influence of aging on the performance of solid source molecular beam epitaxy grown GaInP/AlGaInP quantum well lasers
AU - Tappura, Kirsi
AU - Aarik, Jaan
AU - Nurmi, Tero
AU - Pessa, Markus
PY - 1996
Y1 - 1996
N2 - We have studied the influence of aging on the performance of GaInP/AlGaInP quantum well lasers grown by all solid source molecular beam epitaxy. A remarkable improvement in the laser characteristics was observed during the first 20–30 h of continuous wave operation at a constant current corresponding to the initial output power of 100 mW. After such an aging process the threshold current density was typically decreased 30% from its original value. The comparison of the experimentally and theoretically determined gain‐current curves revealed the improved laser performance to be caused by the reduction of the nonradiative recombination rate.
AB - We have studied the influence of aging on the performance of GaInP/AlGaInP quantum well lasers grown by all solid source molecular beam epitaxy. A remarkable improvement in the laser characteristics was observed during the first 20–30 h of continuous wave operation at a constant current corresponding to the initial output power of 100 mW. After such an aging process the threshold current density was typically decreased 30% from its original value. The comparison of the experimentally and theoretically determined gain‐current curves revealed the improved laser performance to be caused by the reduction of the nonradiative recombination rate.
U2 - 10.1063/1.116511
DO - 10.1063/1.116511
M3 - Article
VL - 68
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 24
M1 - 3383
ER -