Influence of aging on the performance of solid source molecular beam epitaxy grown GaInP/AlGaInP quantum well lasers

Kirsi Tappura, Jaan Aarik, Tero Nurmi, Markus Pessa

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We have studied the influence of aging on the performance of GaInP/AlGaInP quantum well lasers grown by all solid source molecular beam epitaxy. A remarkable improvement in the laser characteristics was observed during the first 20–30 h of continuous wave operation at a constant current corresponding to the initial output power of 100 mW. After such an aging process the threshold current density was typically decreased 30% from its original value. The comparison of the experimentally and theoretically determined gain‐current curves revealed the improved laser performance to be caused by the reduction of the nonradiative recombination rate.
Original languageEnglish
Article number3383
JournalApplied Physics Letters
Volume68
Issue number24
DOIs
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

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quantum well lasers
molecular beam epitaxy
threshold currents
continuous radiation
lasers
current density
output
curves

Cite this

@article{e4a5a9a405a54a95b65f9aaa0a09f16b,
title = "Influence of aging on the performance of solid source molecular beam epitaxy grown GaInP/AlGaInP quantum well lasers",
abstract = "We have studied the influence of aging on the performance of GaInP/AlGaInP quantum well lasers grown by all solid source molecular beam epitaxy. A remarkable improvement in the laser characteristics was observed during the first 20–30 h of continuous wave operation at a constant current corresponding to the initial output power of 100 mW. After such an aging process the threshold current density was typically decreased 30{\%} from its original value. The comparison of the experimentally and theoretically determined gain‐current curves revealed the improved laser performance to be caused by the reduction of the nonradiative recombination rate.",
author = "Kirsi Tappura and Jaan Aarik and Tero Nurmi and Markus Pessa",
year = "1996",
doi = "10.1063/1.116511",
language = "English",
volume = "68",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "24",

}

Influence of aging on the performance of solid source molecular beam epitaxy grown GaInP/AlGaInP quantum well lasers. / Tappura, Kirsi; Aarik, Jaan; Nurmi, Tero; Pessa, Markus.

In: Applied Physics Letters, Vol. 68, No. 24, 3383, 1996.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Influence of aging on the performance of solid source molecular beam epitaxy grown GaInP/AlGaInP quantum well lasers

AU - Tappura, Kirsi

AU - Aarik, Jaan

AU - Nurmi, Tero

AU - Pessa, Markus

PY - 1996

Y1 - 1996

N2 - We have studied the influence of aging on the performance of GaInP/AlGaInP quantum well lasers grown by all solid source molecular beam epitaxy. A remarkable improvement in the laser characteristics was observed during the first 20–30 h of continuous wave operation at a constant current corresponding to the initial output power of 100 mW. After such an aging process the threshold current density was typically decreased 30% from its original value. The comparison of the experimentally and theoretically determined gain‐current curves revealed the improved laser performance to be caused by the reduction of the nonradiative recombination rate.

AB - We have studied the influence of aging on the performance of GaInP/AlGaInP quantum well lasers grown by all solid source molecular beam epitaxy. A remarkable improvement in the laser characteristics was observed during the first 20–30 h of continuous wave operation at a constant current corresponding to the initial output power of 100 mW. After such an aging process the threshold current density was typically decreased 30% from its original value. The comparison of the experimentally and theoretically determined gain‐current curves revealed the improved laser performance to be caused by the reduction of the nonradiative recombination rate.

U2 - 10.1063/1.116511

DO - 10.1063/1.116511

M3 - Article

VL - 68

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 3383

ER -