We have studied the influence of aging on the performance of GaInP/AlGaInP quantum well lasers grown by all solid source molecular beam epitaxy. A remarkable improvement in the laser characteristics was observed during the first 20–30 h of continuous wave operation at a constant current corresponding to the initial output power of 100 mW. After such an aging process the threshold current density was typically decreased 30% from its original value. The comparison of the experimentally and theoretically determined gain‐current curves revealed the improved laser performance to be caused by the reduction of the nonradiative recombination rate.
Tappura, K., Aarik, J., Nurmi, T., & Pessa, M. (1996). Influence of aging on the performance of solid source molecular beam epitaxy grown GaInP/AlGaInP quantum well lasers. Applied Physics Letters, 68(24), . https://doi.org/10.1063/1.116511