Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures

Riikka Puurunen, Feng Gao

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    9 Citations (Scopus)
    Original languageEnglish
    Title of host publicationAtomic Layer Deposition (BALD), International Baltic Conference on
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages20-24
    ISBN (Electronic)978-1-5090-3416-1
    ISBN (Print)978-1-5090-3417-8
    DOIs
    Publication statusPublished - 27 Mar 2016
    MoE publication typeA4 Article in a conference publication
    Event14th International Baltic Conference on Atomic Layer Deposition - Sokos Palace Bridge Hotel, St. Petersburg, Russian Federation
    Duration: 2 Oct 20164 Oct 2016
    Conference number: 14

    Conference

    Conference14th International Baltic Conference on Atomic Layer Deposition
    Abbreviated titleBALD
    CountryRussian Federation
    CitySt. Petersburg
    Period2/10/164/10/16

    Keywords

    • films
    • Aluminum oxide
    • microscopy
    • correlation
    • market research
    • temperature measurement

    Cite this

    Puurunen, R., & Gao, F. (2016). Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures. In Atomic Layer Deposition (BALD), International Baltic Conference on (pp. 20-24). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/BALD.2016.7886526