Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures

Riikka Puurunen, Feng Gao

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    6 Citations (Scopus)
    Original languageEnglish
    Title of host publicationAtomic Layer Deposition (BALD), International Baltic Conference on
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages20-24
    ISBN (Electronic)978-1-5090-3416-1
    ISBN (Print)978-1-5090-3417-8
    DOIs
    Publication statusPublished - 27 Mar 2016
    MoE publication typeA4 Article in a conference publication
    Event14th International Baltic Conference on Atomic Layer Deposition - Sokos Palace Bridge Hotel, St. Petersburg, Russian Federation
    Duration: 2 Oct 20164 Oct 2016
    Conference number: 14

    Conference

    Conference14th International Baltic Conference on Atomic Layer Deposition
    Abbreviated titleBALD
    CountryRussian Federation
    CitySt. Petersburg
    Period2/10/164/10/16

    Keywords

    • films
    • Aluminum oxide
    • microscopy
    • correlation
    • market research
    • temperature measurement

    Cite this

    Puurunen, R., & Gao, F. (2016). Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures. In Atomic Layer Deposition (BALD), International Baltic Conference on (pp. 20-24). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/BALD.2016.7886526
    Puurunen, Riikka ; Gao, Feng. / Influence of ALD temperature on thin film conformality : Investigation with microscopic lateral high-aspect-ratio structures. Atomic Layer Deposition (BALD), International Baltic Conference on . IEEE Institute of Electrical and Electronic Engineers , 2016. pp. 20-24
    @inproceedings{c34609be41844ec9b220afc4588f48d0,
    title = "Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures",
    keywords = "films, Aluminum oxide, microscopy, correlation, market research, temperature measurement",
    author = "Riikka Puurunen and Feng Gao",
    note = "Project : 102086",
    year = "2016",
    month = "3",
    day = "27",
    doi = "10.1109/BALD.2016.7886526",
    language = "English",
    isbn = "978-1-5090-3417-8",
    pages = "20--24",
    booktitle = "Atomic Layer Deposition (BALD), International Baltic Conference on",
    publisher = "IEEE Institute of Electrical and Electronic Engineers",
    address = "United States",

    }

    Puurunen, R & Gao, F 2016, Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures. in Atomic Layer Deposition (BALD), International Baltic Conference on . IEEE Institute of Electrical and Electronic Engineers , pp. 20-24, 14th International Baltic Conference on Atomic Layer Deposition, St. Petersburg, Russian Federation, 2/10/16. https://doi.org/10.1109/BALD.2016.7886526

    Influence of ALD temperature on thin film conformality : Investigation with microscopic lateral high-aspect-ratio structures. / Puurunen, Riikka; Gao, Feng.

    Atomic Layer Deposition (BALD), International Baltic Conference on . IEEE Institute of Electrical and Electronic Engineers , 2016. p. 20-24.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - Influence of ALD temperature on thin film conformality

    T2 - Investigation with microscopic lateral high-aspect-ratio structures

    AU - Puurunen, Riikka

    AU - Gao, Feng

    N1 - Project : 102086

    PY - 2016/3/27

    Y1 - 2016/3/27

    KW - films

    KW - Aluminum oxide

    KW - microscopy

    KW - correlation

    KW - market research

    KW - temperature measurement

    U2 - 10.1109/BALD.2016.7886526

    DO - 10.1109/BALD.2016.7886526

    M3 - Conference article in proceedings

    SN - 978-1-5090-3417-8

    SP - 20

    EP - 24

    BT - Atomic Layer Deposition (BALD), International Baltic Conference on

    PB - IEEE Institute of Electrical and Electronic Engineers

    ER -

    Puurunen R, Gao F. Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures. In Atomic Layer Deposition (BALD), International Baltic Conference on . IEEE Institute of Electrical and Electronic Engineers . 2016. p. 20-24 https://doi.org/10.1109/BALD.2016.7886526