Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures

Riikka Puurunen, Feng Gao

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

5 Citations (Scopus)
Original languageEnglish
Title of host publicationAtomic Layer Deposition (BALD), International Baltic Conference on
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages20-24
ISBN (Electronic)978-1-5090-3416-1
ISBN (Print)978-1-5090-3417-8
DOIs
Publication statusPublished - 27 Mar 2016
MoE publication typeA4 Article in a conference publication
Event14th International Baltic Conference on Atomic Layer Deposition - Sokos Palace Bridge Hotel, St. Petersburg, Russian Federation
Duration: 2 Oct 20164 Oct 2016
Conference number: 14

Conference

Conference14th International Baltic Conference on Atomic Layer Deposition
Abbreviated titleBALD
CountryRussian Federation
CitySt. Petersburg
Period2/10/164/10/16

Keywords

  • films
  • Aluminum oxide
  • microscopy
  • correlation
  • market research
  • temperature measurement

Cite this

Puurunen, R., & Gao, F. (2016). Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures. In Atomic Layer Deposition (BALD), International Baltic Conference on (pp. 20-24). Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/BALD.2016.7886526
Puurunen, Riikka ; Gao, Feng. / Influence of ALD temperature on thin film conformality : Investigation with microscopic lateral high-aspect-ratio structures. Atomic Layer Deposition (BALD), International Baltic Conference on . Institute of Electrical and Electronic Engineers IEEE, 2016. pp. 20-24
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title = "Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures",
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author = "Riikka Puurunen and Feng Gao",
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Puurunen, R & Gao, F 2016, Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures. in Atomic Layer Deposition (BALD), International Baltic Conference on . Institute of Electrical and Electronic Engineers IEEE, pp. 20-24, 14th International Baltic Conference on Atomic Layer Deposition, St. Petersburg, Russian Federation, 2/10/16. https://doi.org/10.1109/BALD.2016.7886526

Influence of ALD temperature on thin film conformality : Investigation with microscopic lateral high-aspect-ratio structures. / Puurunen, Riikka; Gao, Feng.

Atomic Layer Deposition (BALD), International Baltic Conference on . Institute of Electrical and Electronic Engineers IEEE, 2016. p. 20-24.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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N1 - Project : 102086

PY - 2016/3/27

Y1 - 2016/3/27

KW - films

KW - Aluminum oxide

KW - microscopy

KW - correlation

KW - market research

KW - temperature measurement

U2 - 10.1109/BALD.2016.7886526

DO - 10.1109/BALD.2016.7886526

M3 - Conference article in proceedings

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Puurunen R, Gao F. Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures. In Atomic Layer Deposition (BALD), International Baltic Conference on . Institute of Electrical and Electronic Engineers IEEE. 2016. p. 20-24 https://doi.org/10.1109/BALD.2016.7886526