Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures

Riikka Puurunen; Feng Gao

doi:10.1109/BALD.2016.7886526

Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures

Riikka Puurunen
, Feng Gao

VTT (former employee or external)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

16 Citations (Scopus)

Original language	English
Title of host publication	Atomic Layer Deposition (BALD), International Baltic Conference on
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	20-24
ISBN (Electronic)	978-1-5090-3416-1
ISBN (Print)	978-1-5090-3417-8
DOIs	https://doi.org/10.1109/BALD.2016.7886526
Publication status	Published - 27 Mar 2016
MoE publication type	A4 Article in a conference publication
Event	14th International Baltic Conference on Atomic Layer Deposition - Sokos Palace Bridge Hotel, St. Petersburg, Russian Federation Duration: 2 Oct 2016 → 4 Oct 2016 Conference number: 14

Conference

Conference	14th International Baltic Conference on Atomic Layer Deposition
Abbreviated title	BALD
Country/Territory	Russian Federation
City	St. Petersburg
Period	2/10/16 → 4/10/16

Keywords

films
Aluminum oxide
microscopy
correlation
market research
temperature measurement

Access to Document

10.1109/BALD.2016.7886526

Cite this

@inproceedings{c34609be41844ec9b220afc4588f48d0,

title = "Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures",

keywords = "films, Aluminum oxide, microscopy, correlation, market research, temperature measurement",

author = "Riikka Puurunen and Feng Gao",

note = "Project : 102086 ; 14th International Baltic Conference on Atomic Layer Deposition, BALD ; Conference date: 02-10-2016 Through 04-10-2016",

year = "2016",

month = mar,

day = "27",

doi = "10.1109/BALD.2016.7886526",

language = "English",

isbn = "978-1-5090-3417-8",

pages = "20--24",

booktitle = "Atomic Layer Deposition (BALD), International Baltic Conference on",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Puurunen, R & Gao, F 2016, Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures. in Atomic Layer Deposition (BALD), International Baltic Conference on . IEEE Institute of Electrical and Electronic Engineers, pp. 20-24, 14th International Baltic Conference on Atomic Layer Deposition, St. Petersburg, Russian Federation, 2/10/16. https://doi.org/10.1109/BALD.2016.7886526

Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures. / Puurunen, Riikka; Gao, Feng.
Atomic Layer Deposition (BALD), International Baltic Conference on . IEEE Institute of Electrical and Electronic Engineers, 2016. p. 20-24.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Influence of ALD temperature on thin film conformality

T2 - 14th International Baltic Conference on Atomic Layer Deposition

AU - Puurunen, Riikka

AU - Gao, Feng

N1 - Conference code: 14

PY - 2016/3/27

Y1 - 2016/3/27

KW - films

KW - Aluminum oxide

KW - microscopy

KW - correlation

KW - market research

KW - temperature measurement

U2 - 10.1109/BALD.2016.7886526

DO - 10.1109/BALD.2016.7886526

M3 - Conference article in proceedings

SN - 978-1-5090-3417-8

SP - 20

EP - 24

BT - Atomic Layer Deposition (BALD), International Baltic Conference on

PB - IEEE Institute of Electrical and Electronic Engineers

Y2 - 2 October 2016 through 4 October 2016

ER -