Influence of layer thickness on the formation of in vacancies in InN grown by molecular beam epitaxy

J. Oila; A. Kemppinen; A. Laakso; K. Saarinen; W. Egger; L. Liszkay; P. Sperr; H. Lu; W. J. Schaff

doi:10.1063/1.1651327

Influence of layer thickness on the formation of in vacancies in InN grown by molecular beam epitaxy

J. Oila^*, A. Kemppinen, A. Laakso, K. Saarinen, W. Egger, L. Liszkay, P. Sperr, H. Lu, W. J. Schaff

^*Corresponding author for this work

Not published at VTT

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Abstract

The formation of In vacancies in InN layers grown on Al ₂O ₃ was discussed. A low energy positron beam was used to identify the vacancies by using molecular beam epitaxy. It was found that the concentration of vacancies decreased with the increasing layer thickness. Results show that the decrease in the vacancy concentration coincided with the increase in the electron Hall mobility.

Original language	English
Pages (from-to)	1486-1488
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	9
DOIs	https://doi.org/10.1063/1.1651327
Publication status	Published - 1 Mar 2004
MoE publication type	A1 Journal article-refereed

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10.1063/1.1651327

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abstract = "The formation of In vacancies in InN layers grown on Al 2O 3 was discussed. A low energy positron beam was used to identify the vacancies by using molecular beam epitaxy. It was found that the concentration of vacancies decreased with the increasing layer thickness. Results show that the decrease in the vacancy concentration coincided with the increase in the electron Hall mobility.",

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AU - Oila, J.

AU - Kemppinen, A.

AU - Laakso, A.

AU - Saarinen, K.

AU - Egger, W.

AU - Liszkay, L.

AU - Sperr, P.

AU - Lu, H.

AU - Schaff, W. J.

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AB - The formation of In vacancies in InN layers grown on Al 2O 3 was discussed. A low energy positron beam was used to identify the vacancies by using molecular beam epitaxy. It was found that the concentration of vacancies decreased with the increasing layer thickness. Results show that the decrease in the vacancy concentration coincided with the increase in the electron Hall mobility.

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Influence of layer thickness on the formation of in vacancies in InN grown by molecular beam epitaxy

Abstract

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