Abstract
The formation of In vacancies in InN layers grown on Al 2O 3 was discussed. A low energy positron beam was used to identify the vacancies by using molecular beam epitaxy. It was found that the concentration of vacancies decreased with the increasing layer thickness. Results show that the decrease in the vacancy concentration coincided with the increase in the electron Hall mobility.
Original language | English |
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Pages (from-to) | 1486-1488 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1 Mar 2004 |
MoE publication type | A1 Journal article-refereed |