Influence of layer thickness on the formation of in vacancies in InN grown by molecular beam epitaxy

J. Oila, A. Kemppinen, A. Laakso, K. Saarinen, W. Egger, L. Liszkay, P. Sperr, H. Lu, W. J. Schaff

Research output: Contribution to journalArticleScientificpeer-review

43 Citations (Scopus)

Abstract

The formation of In vacancies in InN layers grown on Al 2O 3 was discussed. A low energy positron beam was used to identify the vacancies by using molecular beam epitaxy. It was found that the concentration of vacancies decreased with the increasing layer thickness. Results show that the decrease in the vacancy concentration coincided with the increase in the electron Hall mobility.

Original languageEnglish
Pages (from-to)1486-1488
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number9
DOIs
Publication statusPublished - 1 Mar 2004
MoE publication typeA1 Journal article-refereed

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