Influence of layer thickness on the formation of in vacancies in InN grown by molecular beam epitaxy

J. Oila; A. Kemppinen; A. Laakso; K. Saarinen; W. Egger; L. Liszkay; P. Sperr; H. Lu; W. J. Schaff

doi:10.1063/1.1651327

Influence of layer thickness on the formation of in vacancies in InN grown by molecular beam epitaxy

J. Oila, A. Kemppinen, A. Laakso, K. Saarinen, W. Egger, L. Liszkay, P. Sperr, H. Lu, W. J. Schaff

Not published at VTT

Research output: Contribution to journal › Article › Scientific › peer-review

44 Citations (Scopus)

Abstract

The formation of In vacancies in InN layers grown on Al ₂O ₃ was discussed. A low energy positron beam was used to identify the vacancies by using molecular beam epitaxy. It was found that the concentration of vacancies decreased with the increasing layer thickness. Results show that the decrease in the vacancy concentration coincided with the increase in the electron Hall mobility.

Original language	English
Pages (from-to)	1486-1488
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	9
DOIs	https://doi.org/10.1063/1.1651327
Publication status	Published - 1 Mar 2004
MoE publication type	A1 Journal article-refereed

Access to Document

10.1063/1.1651327

Cite this

@article{2081e5f63d80416eb96ff72f14ab32ba,

title = "Influence of layer thickness on the formation of in vacancies in InN grown by molecular beam epitaxy",

abstract = "The formation of In vacancies in InN layers grown on Al 2O 3 was discussed. A low energy positron beam was used to identify the vacancies by using molecular beam epitaxy. It was found that the concentration of vacancies decreased with the increasing layer thickness. Results show that the decrease in the vacancy concentration coincided with the increase in the electron Hall mobility.",

author = "J. Oila and A. Kemppinen and A. Laakso and K. Saarinen and W. Egger and L. Liszkay and P. Sperr and H. Lu and Schaff, {W. J.}",

year = "2004",

month = mar,

day = "1",

doi = "10.1063/1.1651327",

language = "English",

volume = "84",

pages = "1486--1488",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "9",

}

TY - JOUR

T1 - Influence of layer thickness on the formation of in vacancies in InN grown by molecular beam epitaxy

AU - Oila, J.

AU - Kemppinen, A.

AU - Laakso, A.

AU - Saarinen, K.

AU - Egger, W.

AU - Liszkay, L.

AU - Sperr, P.

AU - Lu, H.

AU - Schaff, W. J.

PY - 2004/3/1

Y1 - 2004/3/1

N2 - The formation of In vacancies in InN layers grown on Al 2O 3 was discussed. A low energy positron beam was used to identify the vacancies by using molecular beam epitaxy. It was found that the concentration of vacancies decreased with the increasing layer thickness. Results show that the decrease in the vacancy concentration coincided with the increase in the electron Hall mobility.

AB - The formation of In vacancies in InN layers grown on Al 2O 3 was discussed. A low energy positron beam was used to identify the vacancies by using molecular beam epitaxy. It was found that the concentration of vacancies decreased with the increasing layer thickness. Results show that the decrease in the vacancy concentration coincided with the increase in the electron Hall mobility.

UR - http://www.scopus.com/inward/record.url?scp=1842430917&partnerID=8YFLogxK

U2 - 10.1063/1.1651327

DO - 10.1063/1.1651327

M3 - Article

AN - SCOPUS:1842430917

SN - 0003-6951

VL - 84

SP - 1486

EP - 1488

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Influence of layer thickness on the formation of in vacancies in InN grown by molecular beam epitaxy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this