Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells

H.F. Liu (Corresponding Author), C.S. Peng, Jari Likonen, T. Jouhti, S. Karirinne, J. Konttinen, M. Pessa

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

Effects of thermal annealing on optical and structural properties of GaInNAs/GaAs quantum well (QW) heterostructures, which were coated with dielectric films, were studied using photoluminescence, x-ray diffraction (XRD), and secondary-ion mass spectrometry (SIMS). A sample having no dielectric coating exhibited a rapid saturable blueshift in the beginning of annealing. A Si3N4 cap layer prevented the line shift, while a SiO2 cap enhanced the shift. The XRD and SIMS spectra provided evidence that the large blueshift for the SiO2-capped sample originated from Ga/In interdiffusion across the QW walls, and from a local reorganization of N-bonding configuration within the QW. The inhibition of blueshift for the Si3N4-capped sample was likely due to an improved stability of Ga–N bonds during annealing.
Original languageEnglish
Pages (from-to)4102 - 4104
Number of pages3
JournalJournal of Applied Physics
Volume95
Issue number8
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

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caps
nitrides
quantum wells
secondary ion mass spectrometry
annealing
oxides
x ray diffraction
shift
photoluminescence
coatings
optical properties
configurations

Keywords

  • quantum wells

Cite this

Liu, H.F. ; Peng, C.S. ; Likonen, Jari ; Jouhti, T. ; Karirinne, S. ; Konttinen, J. ; Pessa, M. / Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells. In: Journal of Applied Physics. 2004 ; Vol. 95, No. 8. pp. 4102 - 4104.
@article{d6e87a3c066a40b3909aec7d6cd7e7c8,
title = "Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells",
abstract = "Effects of thermal annealing on optical and structural properties of GaInNAs/GaAs quantum well (QW) heterostructures, which were coated with dielectric films, were studied using photoluminescence, x-ray diffraction (XRD), and secondary-ion mass spectrometry (SIMS). A sample having no dielectric coating exhibited a rapid saturable blueshift in the beginning of annealing. A Si3N4 cap layer prevented the line shift, while a SiO2 cap enhanced the shift. The XRD and SIMS spectra provided evidence that the large blueshift for the SiO2-capped sample originated from Ga/In interdiffusion across the QW walls, and from a local reorganization of N-bonding configuration within the QW. The inhibition of blueshift for the Si3N4-capped sample was likely due to an improved stability of Ga–N bonds during annealing.",
keywords = "quantum wells",
author = "H.F. Liu and C.S. Peng and Jari Likonen and T. Jouhti and S. Karirinne and J. Konttinen and M. Pessa",
year = "2004",
doi = "10.1063/1.1687988",
language = "English",
volume = "95",
pages = "4102 -- 4104",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics AIP",
number = "8",

}

Liu, HF, Peng, CS, Likonen, J, Jouhti, T, Karirinne, S, Konttinen, J & Pessa, M 2004, 'Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells', Journal of Applied Physics, vol. 95, no. 8, pp. 4102 - 4104. https://doi.org/10.1063/1.1687988

Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells. / Liu, H.F. (Corresponding Author); Peng, C.S.; Likonen, Jari; Jouhti, T.; Karirinne, S.; Konttinen, J.; Pessa, M.

In: Journal of Applied Physics, Vol. 95, No. 8, 2004, p. 4102 - 4104.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells

AU - Liu, H.F.

AU - Peng, C.S.

AU - Likonen, Jari

AU - Jouhti, T.

AU - Karirinne, S.

AU - Konttinen, J.

AU - Pessa, M.

PY - 2004

Y1 - 2004

N2 - Effects of thermal annealing on optical and structural properties of GaInNAs/GaAs quantum well (QW) heterostructures, which were coated with dielectric films, were studied using photoluminescence, x-ray diffraction (XRD), and secondary-ion mass spectrometry (SIMS). A sample having no dielectric coating exhibited a rapid saturable blueshift in the beginning of annealing. A Si3N4 cap layer prevented the line shift, while a SiO2 cap enhanced the shift. The XRD and SIMS spectra provided evidence that the large blueshift for the SiO2-capped sample originated from Ga/In interdiffusion across the QW walls, and from a local reorganization of N-bonding configuration within the QW. The inhibition of blueshift for the Si3N4-capped sample was likely due to an improved stability of Ga–N bonds during annealing.

AB - Effects of thermal annealing on optical and structural properties of GaInNAs/GaAs quantum well (QW) heterostructures, which were coated with dielectric films, were studied using photoluminescence, x-ray diffraction (XRD), and secondary-ion mass spectrometry (SIMS). A sample having no dielectric coating exhibited a rapid saturable blueshift in the beginning of annealing. A Si3N4 cap layer prevented the line shift, while a SiO2 cap enhanced the shift. The XRD and SIMS spectra provided evidence that the large blueshift for the SiO2-capped sample originated from Ga/In interdiffusion across the QW walls, and from a local reorganization of N-bonding configuration within the QW. The inhibition of blueshift for the Si3N4-capped sample was likely due to an improved stability of Ga–N bonds during annealing.

KW - quantum wells

U2 - 10.1063/1.1687988

DO - 10.1063/1.1687988

M3 - Article

VL - 95

SP - 4102

EP - 4104

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -