Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells

H.F. Liu (Corresponding Author), C.S. Peng, Jari Likonen, T. Jouhti, S. Karirinne, J. Konttinen, M. Pessa

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    Effects of thermal annealing on optical and structural properties of GaInNAs/GaAs quantum well (QW) heterostructures, which were coated with dielectric films, were studied using photoluminescence, x-ray diffraction (XRD), and secondary-ion mass spectrometry (SIMS). A sample having no dielectric coating exhibited a rapid saturable blueshift in the beginning of annealing. A Si3N4 cap layer prevented the line shift, while a SiO2 cap enhanced the shift. The XRD and SIMS spectra provided evidence that the large blueshift for the SiO2-capped sample originated from Ga/In interdiffusion across the QW walls, and from a local reorganization of N-bonding configuration within the QW. The inhibition of blueshift for the Si3N4-capped sample was likely due to an improved stability of Ga–N bonds during annealing.
    Original languageEnglish
    Pages (from-to)4102 - 4104
    Number of pages3
    JournalJournal of Applied Physics
    Issue number8
    Publication statusPublished - 2004
    MoE publication typeA1 Journal article-refereed



    • quantum wells

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