Effects of thermal annealing on optical and structural properties of GaInNAs/GaAs quantum well (QW) heterostructures, which were coated with dielectric films, were studied using photoluminescence, x-ray diffraction (XRD), and secondary-ion mass spectrometry (SIMS). A sample having no dielectric coating exhibited a rapid saturable blueshift in the beginning of annealing. A Si3N4 cap layer prevented the line shift, while a SiO2 cap enhanced the shift. The XRD and SIMS spectra provided evidence that the large blueshift for the SiO2-capped sample originated from Ga/In interdiffusion across the QW walls, and from a local reorganization of N-bonding configuration within the QW. The inhibition of blueshift for the Si3N4-capped sample was likely due to an improved stability of Ga–N bonds during annealing.
- quantum wells
Liu, H. F., Peng, C. S., Likonen, J., Jouhti, T., Karirinne, S., Konttinen, J., & Pessa, M. (2004). Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells. Journal of Applied Physics, 95(8), 4102 - 4104. https://doi.org/10.1063/1.1687988