Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells

H.F. Liu (Corresponding Author), C.S. Peng, Jari Likonen, T. Jouhti, S. Karirinne, J. Konttinen, M. Pessa

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)

    Abstract

    Effects of thermal annealing on optical and structural properties of GaInNAs/GaAs quantum well (QW) heterostructures, which were coated with dielectric films, were studied using photoluminescence, x-ray diffraction (XRD), and secondary-ion mass spectrometry (SIMS). A sample having no dielectric coating exhibited a rapid saturable blueshift in the beginning of annealing. A Si3N4 cap layer prevented the line shift, while a SiO2 cap enhanced the shift. The XRD and SIMS spectra provided evidence that the large blueshift for the SiO2-capped sample originated from Ga/In interdiffusion across the QW walls, and from a local reorganization of N-bonding configuration within the QW. The inhibition of blueshift for the Si3N4-capped sample was likely due to an improved stability of Ga–N bonds during annealing.
    Original languageEnglish
    Pages (from-to)4102 - 4104
    Number of pages3
    JournalJournal of Applied Physics
    Volume95
    Issue number8
    DOIs
    Publication statusPublished - 2004
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    caps
    nitrides
    quantum wells
    secondary ion mass spectrometry
    annealing
    oxides
    x ray diffraction
    shift
    photoluminescence
    coatings
    optical properties
    configurations

    Keywords

    • quantum wells

    Cite this

    Liu, H.F. ; Peng, C.S. ; Likonen, Jari ; Jouhti, T. ; Karirinne, S. ; Konttinen, J. ; Pessa, M. / Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells. In: Journal of Applied Physics. 2004 ; Vol. 95, No. 8. pp. 4102 - 4104.
    @article{d6e87a3c066a40b3909aec7d6cd7e7c8,
    title = "Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells",
    abstract = "Effects of thermal annealing on optical and structural properties of GaInNAs/GaAs quantum well (QW) heterostructures, which were coated with dielectric films, were studied using photoluminescence, x-ray diffraction (XRD), and secondary-ion mass spectrometry (SIMS). A sample having no dielectric coating exhibited a rapid saturable blueshift in the beginning of annealing. A Si3N4 cap layer prevented the line shift, while a SiO2 cap enhanced the shift. The XRD and SIMS spectra provided evidence that the large blueshift for the SiO2-capped sample originated from Ga/In interdiffusion across the QW walls, and from a local reorganization of N-bonding configuration within the QW. The inhibition of blueshift for the Si3N4-capped sample was likely due to an improved stability of Ga–N bonds during annealing.",
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    author = "H.F. Liu and C.S. Peng and Jari Likonen and T. Jouhti and S. Karirinne and J. Konttinen and M. Pessa",
    year = "2004",
    doi = "10.1063/1.1687988",
    language = "English",
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    Liu, HF, Peng, CS, Likonen, J, Jouhti, T, Karirinne, S, Konttinen, J & Pessa, M 2004, 'Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells', Journal of Applied Physics, vol. 95, no. 8, pp. 4102 - 4104. https://doi.org/10.1063/1.1687988

    Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells. / Liu, H.F. (Corresponding Author); Peng, C.S.; Likonen, Jari; Jouhti, T.; Karirinne, S.; Konttinen, J.; Pessa, M.

    In: Journal of Applied Physics, Vol. 95, No. 8, 2004, p. 4102 - 4104.

    Research output: Contribution to journalArticleScientificpeer-review

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    T1 - Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells

    AU - Liu, H.F.

    AU - Peng, C.S.

    AU - Likonen, Jari

    AU - Jouhti, T.

    AU - Karirinne, S.

    AU - Konttinen, J.

    AU - Pessa, M.

    PY - 2004

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    N2 - Effects of thermal annealing on optical and structural properties of GaInNAs/GaAs quantum well (QW) heterostructures, which were coated with dielectric films, were studied using photoluminescence, x-ray diffraction (XRD), and secondary-ion mass spectrometry (SIMS). A sample having no dielectric coating exhibited a rapid saturable blueshift in the beginning of annealing. A Si3N4 cap layer prevented the line shift, while a SiO2 cap enhanced the shift. The XRD and SIMS spectra provided evidence that the large blueshift for the SiO2-capped sample originated from Ga/In interdiffusion across the QW walls, and from a local reorganization of N-bonding configuration within the QW. The inhibition of blueshift for the Si3N4-capped sample was likely due to an improved stability of Ga–N bonds during annealing.

    AB - Effects of thermal annealing on optical and structural properties of GaInNAs/GaAs quantum well (QW) heterostructures, which were coated with dielectric films, were studied using photoluminescence, x-ray diffraction (XRD), and secondary-ion mass spectrometry (SIMS). A sample having no dielectric coating exhibited a rapid saturable blueshift in the beginning of annealing. A Si3N4 cap layer prevented the line shift, while a SiO2 cap enhanced the shift. The XRD and SIMS spectra provided evidence that the large blueshift for the SiO2-capped sample originated from Ga/In interdiffusion across the QW walls, and from a local reorganization of N-bonding configuration within the QW. The inhibition of blueshift for the Si3N4-capped sample was likely due to an improved stability of Ga–N bonds during annealing.

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