@inproceedings{0caaad6c78bd43d1b399ffa445c04c38,
title = "Influence of oxygen incorporation on beryllium-And silicon-doped InP grown by solid source molecular beam epitaxy",
abstract = "The effect of oxygen incorporation on electrical and optical properties of Be-And Si-doped InP grown by solid source molecular beam epitaxy has been studied. Oxygen was observed to reduce both the Be and Si doping efficiencies in InP and to introduce recombination centers that degrade the photoluminescence property. The compensation in Be-InP was more pronounced than in Si-InP. With high oxygen impurity concentration, Be-InP was found to be n-Type in Hall measurements. Electrical inactivity of Be is likely due to the formation of Be-O complexes in InP. Oxygen was originated from the phosphorous source and could be reduced by employing lowered phosphorous cracker temperature.",
author = "Ning Xiang and Jari Likonen and Jani Turpeinen and Saarinen, {Mika J.} and Mika Toivonen and Markus Pessa",
note = "Funding Information: This work was supported, in part, by the Academy ofFinland within the EMMA MACOMIO Project # 46784. ; 4th International Conference on Thin Film Physics and Applications ; Conference date: 08-05-2000 Through 11-05-2000",
year = "2000",
doi = "10.1117/12.408321",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "International Society for Optics and Photonics SPIE",
pages = "72--75",
booktitle = "Fourth International Conference on Thin Film Physics and Applications",
address = "United States",
}