Influence of oxygen incorporation on beryllium-And silicon-doped InP grown by solid source molecular beam epitaxy

Ning Xiang, Jari Likonen, Jani Turpeinen, Mika J. Saarinen, Mika Toivonen, Markus Pessa

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

4 Citations (Scopus)

Abstract

The effect of oxygen incorporation on electrical and optical properties of Be-And Si-doped InP grown by solid source molecular beam epitaxy has been studied. Oxygen was observed to reduce both the Be and Si doping efficiencies in InP and to introduce recombination centers that degrade the photoluminescence property. The compensation in Be-InP was more pronounced than in Si-InP. With high oxygen impurity concentration, Be-InP was found to be n-Type in Hall measurements. Electrical inactivity of Be is likely due to the formation of Be-O complexes in InP. Oxygen was originated from the phosphorous source and could be reduced by employing lowered phosphorous cracker temperature.

Original languageEnglish
Title of host publicationFourth International Conference on Thin Film Physics and Applications
PublisherInternational Society for Optics and Photonics SPIE
Pages72-75
Number of pages4
DOIs
Publication statusPublished - 2000
MoE publication typeA4 Article in a conference publication
Event4th International Conference on Thin Film Physics and Applications - Shanghai, China
Duration: 8 May 200011 May 2000

Publication series

SeriesProceedings of SPIE - The International Society for Optical Engineering
Volume4086
ISSN0277-786X

Conference

Conference4th International Conference on Thin Film Physics and Applications
Country/TerritoryChina
CityShanghai
Period8/05/0011/05/00

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