Influence of oxygen incorporation on beryllium-And silicon-doped InP grown by solid source molecular beam epitaxy

Ning Xiang; Jari Likonen; Jani Turpeinen; Mika J. Saarinen; Mika Toivonen; Markus Pessa

doi:10.1117/12.408321

Influence of oxygen incorporation on beryllium-And silicon-doped InP grown by solid source molecular beam epitaxy

Ning Xiang^*
, Jari Likonen
, Jani Turpeinen
, Mika J. Saarinen
, Mika Toivonen
, Markus Pessa

^*Corresponding author for this work

Tampere University of Technology (TUT)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

4 Citations (Scopus)

Abstract

The effect of oxygen incorporation on electrical and optical properties of Be-And Si-doped InP grown by solid source molecular beam epitaxy has been studied. Oxygen was observed to reduce both the Be and Si doping efficiencies in InP and to introduce recombination centers that degrade the photoluminescence property. The compensation in Be-InP was more pronounced than in Si-InP. With high oxygen impurity concentration, Be-InP was found to be n-Type in Hall measurements. Electrical inactivity of Be is likely due to the formation of Be-O complexes in InP. Oxygen was originated from the phosphorous source and could be reduced by employing lowered phosphorous cracker temperature.

Original language	English
Title of host publication	Fourth International Conference on Thin Film Physics and Applications
Publisher	International Society for Optics and Photonics SPIE
Pages	72-75
DOIs	https://doi.org/10.1117/12.408321
Publication status	Published - 2000
MoE publication type	A4 Article in a conference publication
Event	4th International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 8 May 2000 → 11 May 2000

Publication series

Series	Proceedings of SPIE
Volume	4086
ISSN	0277-786X

Conference

Conference	4th International Conference on Thin Film Physics and Applications
Country/Territory	China
City	Shanghai
Period	8/05/00 → 11/05/00

Funding

This work was supported, in part, by the Academy ofFinland within the EMMA MACOMIO Project # 46784.

Access to Document

10.1117/12.408321

Cite this

Xiang, N., Likonen, J., Turpeinen, J., Saarinen, M. J., Toivonen, M., & Pessa, M. (2000). Influence of oxygen incorporation on beryllium-And silicon-doped InP grown by solid source molecular beam epitaxy. In Fourth International Conference on Thin Film Physics and Applications (pp. 72-75). International Society for Optics and Photonics SPIE. https://doi.org/10.1117/12.408321

@inproceedings{0caaad6c78bd43d1b399ffa445c04c38,

title = "Influence of oxygen incorporation on beryllium-And silicon-doped InP grown by solid source molecular beam epitaxy",

abstract = "The effect of oxygen incorporation on electrical and optical properties of Be-And Si-doped InP grown by solid source molecular beam epitaxy has been studied. Oxygen was observed to reduce both the Be and Si doping efficiencies in InP and to introduce recombination centers that degrade the photoluminescence property. The compensation in Be-InP was more pronounced than in Si-InP. With high oxygen impurity concentration, Be-InP was found to be n-Type in Hall measurements. Electrical inactivity of Be is likely due to the formation of Be-O complexes in InP. Oxygen was originated from the phosphorous source and could be reduced by employing lowered phosphorous cracker temperature.",

author = "Ning Xiang and Jari Likonen and Jani Turpeinen and Saarinen, \{Mika J.\} and Mika Toivonen and Markus Pessa",

note = "Funding Information: This work was supported, in part, by the Academy ofFinland within the EMMA MACOMIO Project \# 46784. ; 4th International Conference on Thin Film Physics and Applications ; Conference date: 08-05-2000 Through 11-05-2000",

year = "2000",

doi = "10.1117/12.408321",

language = "English",

series = "Proceedings of SPIE",

publisher = "International Society for Optics and Photonics SPIE",

pages = "72--75",

booktitle = "Fourth International Conference on Thin Film Physics and Applications",

address = "United States",

}

Xiang, N, Likonen, J, Turpeinen, J, Saarinen, MJ, Toivonen, M & Pessa, M 2000, Influence of oxygen incorporation on beryllium-And silicon-doped InP grown by solid source molecular beam epitaxy. in Fourth International Conference on Thin Film Physics and Applications. International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 4086, pp. 72-75, 4th International Conference on Thin Film Physics and Applications, Shanghai, China, 8/05/00. https://doi.org/10.1117/12.408321

Influence of oxygen incorporation on beryllium-And silicon-doped InP grown by solid source molecular beam epitaxy. / Xiang, Ning; Likonen, Jari; Turpeinen, Jani et al.
Fourth International Conference on Thin Film Physics and Applications. International Society for Optics and Photonics SPIE, 2000. p. 72-75 (Proceedings of SPIE, Vol. 4086).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Influence of oxygen incorporation on beryllium-And silicon-doped InP grown by solid source molecular beam epitaxy

AU - Xiang, Ning

AU - Likonen, Jari

AU - Turpeinen, Jani

AU - Saarinen, Mika J.

AU - Toivonen, Mika

AU - Pessa, Markus

N1 - Funding Information: This work was supported, in part, by the Academy ofFinland within the EMMA MACOMIO Project # 46784.

PY - 2000

Y1 - 2000

N2 - The effect of oxygen incorporation on electrical and optical properties of Be-And Si-doped InP grown by solid source molecular beam epitaxy has been studied. Oxygen was observed to reduce both the Be and Si doping efficiencies in InP and to introduce recombination centers that degrade the photoluminescence property. The compensation in Be-InP was more pronounced than in Si-InP. With high oxygen impurity concentration, Be-InP was found to be n-Type in Hall measurements. Electrical inactivity of Be is likely due to the formation of Be-O complexes in InP. Oxygen was originated from the phosphorous source and could be reduced by employing lowered phosphorous cracker temperature.

AB - The effect of oxygen incorporation on electrical and optical properties of Be-And Si-doped InP grown by solid source molecular beam epitaxy has been studied. Oxygen was observed to reduce both the Be and Si doping efficiencies in InP and to introduce recombination centers that degrade the photoluminescence property. The compensation in Be-InP was more pronounced than in Si-InP. With high oxygen impurity concentration, Be-InP was found to be n-Type in Hall measurements. Electrical inactivity of Be is likely due to the formation of Be-O complexes in InP. Oxygen was originated from the phosphorous source and could be reduced by employing lowered phosphorous cracker temperature.

UR - https://www.scopus.com/pages/publications/77949611703

U2 - 10.1117/12.408321

DO - 10.1117/12.408321

M3 - Conference article in proceedings

AN - SCOPUS:77949611703

T3 - Proceedings of SPIE

SP - 72

EP - 75

BT - Fourth International Conference on Thin Film Physics and Applications

PB - International Society for Optics and Photonics SPIE

T2 - 4th International Conference on Thin Film Physics and Applications

Y2 - 8 May 2000 through 11 May 2000

ER -

Xiang N, Likonen J, Turpeinen J, Saarinen MJ, Toivonen M, Pessa M. Influence of oxygen incorporation on beryllium-And silicon-doped InP grown by solid source molecular beam epitaxy. In Fourth International Conference on Thin Film Physics and Applications. International Society for Optics and Photonics SPIE. 2000. p. 72-75. (Proceedings of SPIE, Vol. 4086). doi: 10.1117/12.408321

Influence of oxygen incorporation on beryllium-And silicon-doped InP grown by solid source molecular beam epitaxy

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