Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered BaxSr1-xTiO3 Thin Films

Tommi Riekkinen, Jan Saijets, Pasi Kostamo, Timo Sajavaara, Sebastiaan Van Dijken

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.
    Original languageEnglish
    Pages (from-to)3-12
    Number of pages10
    JournalFerroelectrics
    Volume392
    Issue number1
    DOIs
    Publication statusPublished - 2009
    MoE publication typeA1 Journal article-refereed

    Keywords

    • Ferroelectrics
    • (Ba,Sr) TiO3
    • parallel-plate capacitor
    • magnetron sputtering

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