The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.
- (Ba,Sr) TiO3
- parallel-plate capacitor
- magnetron sputtering
Riekkinen, T., Saijets, J., Kostamo, P., Sajavaara, T., & Van Dijken, S. (2009). Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered BaxSr1-xTiO3 Thin Films. Ferroelectrics, 392(1), 3-12. https://doi.org/10.1080/00150190903412358