Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered BaxSr1-xTiO3 Thin Films

Tommi Riekkinen, Jan Saijets, Pasi Kostamo, Timo Sajavaara, Sebastiaan Van Dijken

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.
    Original languageEnglish
    Pages (from-to)3-12
    Number of pages10
    JournalFerroelectrics
    Volume392
    Issue number1
    DOIs
    Publication statusPublished - 2009
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Dielectric properties
    dielectric properties
    Structural properties
    Thin films
    Substrates
    thin films
    Crystal microstructure
    Dielectric losses
    Chemical analysis
    parallel plates
    deterioration
    dielectric loss
    Crystal lattices
    Magnetron sputtering
    Ferroelectric materials
    Deterioration
    capacitors
    magnetron sputtering
    Capacitors
    Permittivity

    Keywords

    • Ferroelectrics
    • (Ba,Sr) TiO3
    • parallel-plate capacitor
    • magnetron sputtering

    Cite this

    Riekkinen, Tommi ; Saijets, Jan ; Kostamo, Pasi ; Sajavaara, Timo ; Van Dijken, Sebastiaan. / Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered BaxSr1-xTiO3 Thin Films. In: Ferroelectrics. 2009 ; Vol. 392, No. 1. pp. 3-12.
    @article{ca881e93e0574b3f87008f54b40d0cbd,
    title = "Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered BaxSr1-xTiO3 Thin Films",
    abstract = "The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.",
    keywords = "Ferroelectrics, (Ba,Sr) TiO3, parallel-plate capacitor, magnetron sputtering",
    author = "Tommi Riekkinen and Jan Saijets and Pasi Kostamo and Timo Sajavaara and {Van Dijken}, Sebastiaan",
    year = "2009",
    doi = "10.1080/00150190903412358",
    language = "English",
    volume = "392",
    pages = "3--12",
    journal = "Ferroelectrics",
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    publisher = "Taylor & Francis",
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    Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered BaxSr1-xTiO3 Thin Films. / Riekkinen, Tommi; Saijets, Jan; Kostamo, Pasi; Sajavaara, Timo; Van Dijken, Sebastiaan.

    In: Ferroelectrics, Vol. 392, No. 1, 2009, p. 3-12.

    Research output: Contribution to journalArticleScientificpeer-review

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    T1 - Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered BaxSr1-xTiO3 Thin Films

    AU - Riekkinen, Tommi

    AU - Saijets, Jan

    AU - Kostamo, Pasi

    AU - Sajavaara, Timo

    AU - Van Dijken, Sebastiaan

    PY - 2009

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    N2 - The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.

    AB - The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.

    KW - Ferroelectrics

    KW - (Ba,Sr) TiO3

    KW - parallel-plate capacitor

    KW - magnetron sputtering

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