Abstract
The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.
Original language | English |
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Pages (from-to) | 3-12 |
Number of pages | 10 |
Journal | Ferroelectrics |
Volume | 392 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2009 |
MoE publication type | A1 Journal article-refereed |
Keywords
- Ferroelectrics
- (Ba,Sr) TiO3
- parallel-plate capacitor
- magnetron sputtering