Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered BaxSr1-xTiO3 Thin Films

Tommi Riekkinen, Jan Saijets, Pasi Kostamo, Timo Sajavaara, Sebastiaan Van Dijken

Research output: Contribution to journalArticleScientificpeer-review

Abstract

The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.
Original languageEnglish
Pages (from-to)3-12
Number of pages10
JournalFerroelectrics
Volume392
Issue number1
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

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Dielectric properties
dielectric properties
Structural properties
Thin films
Substrates
thin films
Crystal microstructure
Dielectric losses
Chemical analysis
parallel plates
deterioration
dielectric loss
Crystal lattices
Magnetron sputtering
Ferroelectric materials
Deterioration
capacitors
magnetron sputtering
Capacitors
Permittivity

Keywords

  • Ferroelectrics
  • (Ba,Sr) TiO3
  • parallel-plate capacitor
  • magnetron sputtering

Cite this

Riekkinen, Tommi ; Saijets, Jan ; Kostamo, Pasi ; Sajavaara, Timo ; Van Dijken, Sebastiaan. / Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered BaxSr1-xTiO3 Thin Films. In: Ferroelectrics. 2009 ; Vol. 392, No. 1. pp. 3-12.
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abstract = "The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.",
keywords = "Ferroelectrics, (Ba,Sr) TiO3, parallel-plate capacitor, magnetron sputtering",
author = "Tommi Riekkinen and Jan Saijets and Pasi Kostamo and Timo Sajavaara and {Van Dijken}, Sebastiaan",
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Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered BaxSr1-xTiO3 Thin Films. / Riekkinen, Tommi; Saijets, Jan; Kostamo, Pasi; Sajavaara, Timo; Van Dijken, Sebastiaan.

In: Ferroelectrics, Vol. 392, No. 1, 2009, p. 3-12.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Sajavaara, Timo

AU - Van Dijken, Sebastiaan

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AB - The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.

KW - Ferroelectrics

KW - (Ba,Sr) TiO3

KW - parallel-plate capacitor

KW - magnetron sputtering

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