Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators

Tommi Riekkinen (Corresponding Author), Arto Nurmela, Jyrki Molarius, Tuomas Pensala, P. Kostamo, Markku Ylilammi, S. van Dijken

Research output: Contribution to journalArticleScientificpeer-review

7 Citations (Scopus)

Abstract

The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration into thin film bulk acoustic wave resonators. The crystalline structure and morphology of the Mo and c-axis oriented AlN films were found to vary strongly with seed layer material and thickness. The smoothest Mo electrodes were obtained on thin Ti films. Reactive sputtering of AlN on top of these optimized electrodes resulted in a dense columnar grain structure with a well-aligned (002) crystal orientation and good electro-acoustic properties, including an effective coupling coefficient of 6.89% and quality factor above 1000.

Original languageEnglish
Pages (from-to)6588-6592
Number of pages5
JournalThin Solid Films
Volume517
Issue number24
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

Fingerprint

Acoustic properties
acoustic properties
Seed
seeds
Resonators
resonators
Reactive sputtering
Electrodes
electrodes
sputtering
Thin films
Crystal microstructure
thin films
coupling coefficients
Crystal orientation
Q factors
Acoustic waves
Crystalline materials
acoustics
crystals

Keywords

  • Aluminium nitride
  • Sputtering
  • Piezoelectric effect
  • Crystallization
  • Surface morphology
  • Molybdenum
  • Nickel
  • Titanium

Cite this

Riekkinen, Tommi ; Nurmela, Arto ; Molarius, Jyrki ; Pensala, Tuomas ; Kostamo, P. ; Ylilammi, Markku ; van Dijken, S. / Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators. In: Thin Solid Films. 2009 ; Vol. 517, No. 24. pp. 6588-6592.
@article{9c760aeed137479183319105d20f3de3,
title = "Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators",
abstract = "The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration into thin film bulk acoustic wave resonators. The crystalline structure and morphology of the Mo and c-axis oriented AlN films were found to vary strongly with seed layer material and thickness. The smoothest Mo electrodes were obtained on thin Ti films. Reactive sputtering of AlN on top of these optimized electrodes resulted in a dense columnar grain structure with a well-aligned (002) crystal orientation and good electro-acoustic properties, including an effective coupling coefficient of 6.89{\%} and quality factor above 1000.",
keywords = "Aluminium nitride, Sputtering, Piezoelectric effect, Crystallization, Surface morphology, Molybdenum, Nickel, Titanium",
author = "Tommi Riekkinen and Arto Nurmela and Jyrki Molarius and Tuomas Pensala and P. Kostamo and Markku Ylilammi and {van Dijken}, S.",
year = "2009",
doi = "10.1016/j.tsf.2009.04.060",
language = "English",
volume = "517",
pages = "6588--6592",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "24",

}

Riekkinen, T, Nurmela, A, Molarius, J, Pensala, T, Kostamo, P, Ylilammi, M & van Dijken, S 2009, 'Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators', Thin Solid Films, vol. 517, no. 24, pp. 6588-6592. https://doi.org/10.1016/j.tsf.2009.04.060

Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators. / Riekkinen, Tommi (Corresponding Author); Nurmela, Arto; Molarius, Jyrki; Pensala, Tuomas; Kostamo, P.; Ylilammi, Markku; van Dijken, S.

In: Thin Solid Films, Vol. 517, No. 24, 2009, p. 6588-6592.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators

AU - Riekkinen, Tommi

AU - Nurmela, Arto

AU - Molarius, Jyrki

AU - Pensala, Tuomas

AU - Kostamo, P.

AU - Ylilammi, Markku

AU - van Dijken, S.

PY - 2009

Y1 - 2009

N2 - The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration into thin film bulk acoustic wave resonators. The crystalline structure and morphology of the Mo and c-axis oriented AlN films were found to vary strongly with seed layer material and thickness. The smoothest Mo electrodes were obtained on thin Ti films. Reactive sputtering of AlN on top of these optimized electrodes resulted in a dense columnar grain structure with a well-aligned (002) crystal orientation and good electro-acoustic properties, including an effective coupling coefficient of 6.89% and quality factor above 1000.

AB - The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration into thin film bulk acoustic wave resonators. The crystalline structure and morphology of the Mo and c-axis oriented AlN films were found to vary strongly with seed layer material and thickness. The smoothest Mo electrodes were obtained on thin Ti films. Reactive sputtering of AlN on top of these optimized electrodes resulted in a dense columnar grain structure with a well-aligned (002) crystal orientation and good electro-acoustic properties, including an effective coupling coefficient of 6.89% and quality factor above 1000.

KW - Aluminium nitride

KW - Sputtering

KW - Piezoelectric effect

KW - Crystallization

KW - Surface morphology

KW - Molybdenum

KW - Nickel

KW - Titanium

U2 - 10.1016/j.tsf.2009.04.060

DO - 10.1016/j.tsf.2009.04.060

M3 - Article

VL - 517

SP - 6588

EP - 6592

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 24

ER -