Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators

Tommi Riekkinen; Arto Nurmela; Jyrki Molarius; Tuomas Pensala; P. Kostamo; Markku Ylilammi; S. van Dijken

doi:10.1016/j.tsf.2009.04.060

Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators

Tommi Riekkinen (Corresponding Author), Arto Nurmela, Jyrki Molarius, Tuomas Pensala, P. Kostamo, Markku Ylilammi, S. van Dijken

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

11 Citations (Scopus)

Abstract

The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration into thin film bulk acoustic wave resonators. The crystalline structure and morphology of the Mo and c-axis oriented AlN films were found to vary strongly with seed layer material and thickness. The smoothest Mo electrodes were obtained on thin Ti films. Reactive sputtering of AlN on top of these optimized electrodes resulted in a dense columnar grain structure with a well-aligned (002) crystal orientation and good electro-acoustic properties, including an effective coupling coefficient of 6.89% and quality factor above 1000.

Original language	English
Pages (from-to)	6588-6592
Number of pages	5
Journal	Thin Solid Films
Volume	517
Issue number	24
DOIs	https://doi.org/10.1016/j.tsf.2009.04.060
Publication status	Published - 2009
MoE publication type	A1 Journal article-refereed

Keywords

Aluminium nitride
Sputtering
Piezoelectric effect
Crystallization
Surface morphology
Molybdenum
Nickel
Titanium

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10.1016/j.tsf.2009.04.060

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title = "Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators",

abstract = "The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration into thin film bulk acoustic wave resonators. The crystalline structure and morphology of the Mo and c-axis oriented AlN films were found to vary strongly with seed layer material and thickness. The smoothest Mo electrodes were obtained on thin Ti films. Reactive sputtering of AlN on top of these optimized electrodes resulted in a dense columnar grain structure with a well-aligned (002) crystal orientation and good electro-acoustic properties, including an effective coupling coefficient of 6.89% and quality factor above 1000.",

keywords = "Aluminium nitride, Sputtering, Piezoelectric effect, Crystallization, Surface morphology, Molybdenum, Nickel, Titanium",

author = "Tommi Riekkinen and Arto Nurmela and Jyrki Molarius and Tuomas Pensala and P. Kostamo and Markku Ylilammi and {van Dijken}, S.",

year = "2009",

doi = "10.1016/j.tsf.2009.04.060",

language = "English",

volume = "517",

pages = "6588--6592",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "24",

}

TY - JOUR

T1 - Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators

AU - Riekkinen, Tommi

AU - Nurmela, Arto

AU - Molarius, Jyrki

AU - Pensala, Tuomas

AU - Kostamo, P.

AU - Ylilammi, Markku

AU - van Dijken, S.

PY - 2009

Y1 - 2009

N2 - The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration into thin film bulk acoustic wave resonators. The crystalline structure and morphology of the Mo and c-axis oriented AlN films were found to vary strongly with seed layer material and thickness. The smoothest Mo electrodes were obtained on thin Ti films. Reactive sputtering of AlN on top of these optimized electrodes resulted in a dense columnar grain structure with a well-aligned (002) crystal orientation and good electro-acoustic properties, including an effective coupling coefficient of 6.89% and quality factor above 1000.

AB - The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration into thin film bulk acoustic wave resonators. The crystalline structure and morphology of the Mo and c-axis oriented AlN films were found to vary strongly with seed layer material and thickness. The smoothest Mo electrodes were obtained on thin Ti films. Reactive sputtering of AlN on top of these optimized electrodes resulted in a dense columnar grain structure with a well-aligned (002) crystal orientation and good electro-acoustic properties, including an effective coupling coefficient of 6.89% and quality factor above 1000.

KW - Aluminium nitride

KW - Sputtering

KW - Piezoelectric effect

KW - Crystallization

KW - Surface morphology

KW - Molybdenum

KW - Nickel

KW - Titanium

U2 - 10.1016/j.tsf.2009.04.060

DO - 10.1016/j.tsf.2009.04.060

M3 - Article

SN - 0040-6090

VL - 517

SP - 6588

EP - 6592

JO - Thin Solid Films

JF - Thin Solid Films

IS - 24

ER -

Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators

Abstract

Keywords

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