Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators

Tommi Riekkinen (Corresponding Author), Arto Nurmela, Jyrki Molarius, Tuomas Pensala, P. Kostamo, Markku Ylilammi, S. van Dijken

    Research output: Contribution to journalArticleScientificpeer-review

    7 Citations (Scopus)

    Abstract

    The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration into thin film bulk acoustic wave resonators. The crystalline structure and morphology of the Mo and c-axis oriented AlN films were found to vary strongly with seed layer material and thickness. The smoothest Mo electrodes were obtained on thin Ti films. Reactive sputtering of AlN on top of these optimized electrodes resulted in a dense columnar grain structure with a well-aligned (002) crystal orientation and good electro-acoustic properties, including an effective coupling coefficient of 6.89% and quality factor above 1000.

    Original languageEnglish
    Pages (from-to)6588-6592
    Number of pages5
    JournalThin Solid Films
    Volume517
    Issue number24
    DOIs
    Publication statusPublished - 2009
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Acoustic properties
    acoustic properties
    Seed
    seeds
    Resonators
    resonators
    Reactive sputtering
    Electrodes
    electrodes
    sputtering
    Thin films
    Crystal microstructure
    thin films
    coupling coefficients
    Crystal orientation
    Q factors
    Acoustic waves
    Crystalline materials
    acoustics
    crystals

    Keywords

    • Aluminium nitride
    • Sputtering
    • Piezoelectric effect
    • Crystallization
    • Surface morphology
    • Molybdenum
    • Nickel
    • Titanium

    Cite this

    Riekkinen, Tommi ; Nurmela, Arto ; Molarius, Jyrki ; Pensala, Tuomas ; Kostamo, P. ; Ylilammi, Markku ; van Dijken, S. / Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators. In: Thin Solid Films. 2009 ; Vol. 517, No. 24. pp. 6588-6592.
    @article{9c760aeed137479183319105d20f3de3,
    title = "Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators",
    abstract = "The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration into thin film bulk acoustic wave resonators. The crystalline structure and morphology of the Mo and c-axis oriented AlN films were found to vary strongly with seed layer material and thickness. The smoothest Mo electrodes were obtained on thin Ti films. Reactive sputtering of AlN on top of these optimized electrodes resulted in a dense columnar grain structure with a well-aligned (002) crystal orientation and good electro-acoustic properties, including an effective coupling coefficient of 6.89{\%} and quality factor above 1000.",
    keywords = "Aluminium nitride, Sputtering, Piezoelectric effect, Crystallization, Surface morphology, Molybdenum, Nickel, Titanium",
    author = "Tommi Riekkinen and Arto Nurmela and Jyrki Molarius and Tuomas Pensala and P. Kostamo and Markku Ylilammi and {van Dijken}, S.",
    year = "2009",
    doi = "10.1016/j.tsf.2009.04.060",
    language = "English",
    volume = "517",
    pages = "6588--6592",
    journal = "Thin Solid Films",
    issn = "0040-6090",
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    number = "24",

    }

    Riekkinen, T, Nurmela, A, Molarius, J, Pensala, T, Kostamo, P, Ylilammi, M & van Dijken, S 2009, 'Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators', Thin Solid Films, vol. 517, no. 24, pp. 6588-6592. https://doi.org/10.1016/j.tsf.2009.04.060

    Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators. / Riekkinen, Tommi (Corresponding Author); Nurmela, Arto; Molarius, Jyrki; Pensala, Tuomas; Kostamo, P.; Ylilammi, Markku; van Dijken, S.

    In: Thin Solid Films, Vol. 517, No. 24, 2009, p. 6588-6592.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators

    AU - Riekkinen, Tommi

    AU - Nurmela, Arto

    AU - Molarius, Jyrki

    AU - Pensala, Tuomas

    AU - Kostamo, P.

    AU - Ylilammi, Markku

    AU - van Dijken, S.

    PY - 2009

    Y1 - 2009

    N2 - The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration into thin film bulk acoustic wave resonators. The crystalline structure and morphology of the Mo and c-axis oriented AlN films were found to vary strongly with seed layer material and thickness. The smoothest Mo electrodes were obtained on thin Ti films. Reactive sputtering of AlN on top of these optimized electrodes resulted in a dense columnar grain structure with a well-aligned (002) crystal orientation and good electro-acoustic properties, including an effective coupling coefficient of 6.89% and quality factor above 1000.

    AB - The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration into thin film bulk acoustic wave resonators. The crystalline structure and morphology of the Mo and c-axis oriented AlN films were found to vary strongly with seed layer material and thickness. The smoothest Mo electrodes were obtained on thin Ti films. Reactive sputtering of AlN on top of these optimized electrodes resulted in a dense columnar grain structure with a well-aligned (002) crystal orientation and good electro-acoustic properties, including an effective coupling coefficient of 6.89% and quality factor above 1000.

    KW - Aluminium nitride

    KW - Sputtering

    KW - Piezoelectric effect

    KW - Crystallization

    KW - Surface morphology

    KW - Molybdenum

    KW - Nickel

    KW - Titanium

    U2 - 10.1016/j.tsf.2009.04.060

    DO - 10.1016/j.tsf.2009.04.060

    M3 - Article

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    SP - 6588

    EP - 6592

    JO - Thin Solid Films

    JF - Thin Solid Films

    SN - 0040-6090

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    ER -