Piezoelectric materials are applied in integrated oscillators for microradios in ubiquitous communication. Key parameters include ultra-low power consumption, microsize, low-cost, high spectral purity and sufficient tenability. The material of choice for thin film BAW (Bulk Acoustic Wave) resonator is Aluminium Nitride, because it has good electromechanical coupling, it is very stable, non-toxic, environmentally friendly and compatible with microelectronic IC-processing. Specific requirements for piezoelectric AlN thin film are purity, stoichiometry, orientation in the (0001) plane and the polarity has to be homogeneous. In this work we report on the influence of the underlayer (Ni, Ta, Ti and TiW) of the bottom electrode Molybdenum on the quality of piezoelectric AlN.
|Publication status||Published - 2007|
|MoE publication type||Not Eligible|
|Event||11th European Meeting on Ferroelectricity - Bled, Slovenia|
Duration: 3 Sep 2007 → 7 Sep 2007
|Conference||11th European Meeting on Ferroelectricity|
|Period||3/09/07 → 7/09/07|
- AlN, aluminium nitride
- piezoelectric thin film
- film growth
Riekkinen, T., Molarius, J., Kostamo, P., Pensala, T., & Nurmela, A. (2007). Influence of the seed layer on the crystalline structure and piezoelectric properties of sputter-deposited AlN-films. Paper presented at 11th European Meeting on Ferroelectricity, Bled, Slovenia.