Influence of the seed layer on the crystalline structure and piezoelectric properties of sputter-deposited AlN-films

Tommi Riekkinen, Jyrki Molarius, P. Kostamo, Tuomas Pensala, Arto Nurmela

Research output: Contribution to conferenceConference articleScientific

Abstract

Piezoelectric materials are applied in integrated oscillators for microradios in ubiquitous communication. Key parameters include ultra-low power consumption, microsize, low-cost, high spectral purity and sufficient tenability. The material of choice for thin film BAW (Bulk Acoustic Wave) resonator is Aluminium Nitride, because it has good electromechanical coupling, it is very stable, non-toxic, environmentally friendly and compatible with microelectronic IC-processing. Specific requirements for piezoelectric AlN thin film are purity, stoichiometry, orientation in the (0001) plane and the polarity has to be homogeneous. In this work we report on the influence of the underlayer (Ni, Ta, Ti and TiW) of the bottom electrode Molybdenum on the quality of piezoelectric AlN.
Original languageEnglish
Publication statusPublished - 2007
MoE publication typeNot Eligible
Event11th European Meeting on Ferroelectricity - Bled, Slovenia
Duration: 3 Sep 20077 Sep 2007

Conference

Conference11th European Meeting on Ferroelectricity
CountrySlovenia
CityBled
Period3/09/077/09/07

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Keywords

  • AlN, aluminium nitride
  • piezoelectric thin film
  • RF-resonators
  • film growth

Cite this

Riekkinen, T., Molarius, J., Kostamo, P., Pensala, T., & Nurmela, A. (2007). Influence of the seed layer on the crystalline structure and piezoelectric properties of sputter-deposited AlN-films. Paper presented at 11th European Meeting on Ferroelectricity, Bled, Slovenia.