Influence of the seed layer on the crystalline structure and piezoelectric properties of sputter-deposited AlN-films

Tommi Riekkinen; Jyrki Molarius; P. Kostamo; Tuomas Pensala; Arto Nurmela

Influence of the seed layer on the crystalline structure and piezoelectric properties of sputter-deposited AlN-films

Tommi Riekkinen
, Jyrki Molarius
, P. Kostamo
, Tuomas Pensala
, Arto Nurmela

VTT Technical Research Centre of Finland

Research output: Contribution to conference › Conference article › Scientific

Abstract

Piezoelectric materials are applied in integrated oscillators for microradios in ubiquitous communication. Key parameters include ultra-low power consumption, microsize, low-cost, high spectral purity and sufficient tenability. The material of choice for thin film BAW (Bulk Acoustic Wave) resonator is Aluminium Nitride, because it has good electromechanical coupling, it is very stable, non-toxic, environmentally friendly and compatible with microelectronic IC-processing. Specific requirements for piezoelectric AlN thin film are purity, stoichiometry, orientation in the (0001) plane and the polarity has to be homogeneous. In this work we report on the influence of the underlayer (Ni, Ta, Ti and TiW) of the bottom electrode Molybdenum on the quality of piezoelectric AlN.

Original language	English
Publication status	Published - 2007
MoE publication type	Not Eligible
Event	11th European Meeting on Ferroelectricity - Bled, Slovenia Duration: 3 Sept 2007 → 7 Sept 2007

Conference

Conference	11th European Meeting on Ferroelectricity
Country/Territory	Slovenia
City	Bled
Period	3/09/07 → 7/09/07

Keywords

AlN, aluminium nitride
piezoelectric thin film
RF-resonators
film growth

Cite this

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title = "Influence of the seed layer on the crystalline structure and piezoelectric properties of sputter-deposited AlN-films",

abstract = "Piezoelectric materials are applied in integrated oscillators for microradios in ubiquitous communication. Key parameters include ultra-low power consumption, microsize, low-cost, high spectral purity and sufficient tenability. The material of choice for thin film BAW (Bulk Acoustic Wave) resonator is Aluminium Nitride, because it has good electromechanical coupling, it is very stable, non-toxic, environmentally friendly and compatible with microelectronic IC-processing. Specific requirements for piezoelectric AlN thin film are purity, stoichiometry, orientation in the (0001) plane and the polarity has to be homogeneous. In this work we report on the influence of the underlayer (Ni, Ta, Ti and TiW) of the bottom electrode Molybdenum on the quality of piezoelectric AlN.",

keywords = "AlN, aluminium nitride, piezoelectric thin film, RF-resonators, film growth",

author = "Tommi Riekkinen and Jyrki Molarius and P. Kostamo and Tuomas Pensala and Arto Nurmela",

year = "2007",

language = "English",

note = "11th European Meeting on Ferroelectricity ; Conference date: 03-09-2007 Through 07-09-2007",

}

TY - CONF

T1 - Influence of the seed layer on the crystalline structure and piezoelectric properties of sputter-deposited AlN-films

AU - Riekkinen, Tommi

AU - Molarius, Jyrki

AU - Kostamo, P.

AU - Pensala, Tuomas

AU - Nurmela, Arto

PY - 2007

Y1 - 2007

N2 - Piezoelectric materials are applied in integrated oscillators for microradios in ubiquitous communication. Key parameters include ultra-low power consumption, microsize, low-cost, high spectral purity and sufficient tenability. The material of choice for thin film BAW (Bulk Acoustic Wave) resonator is Aluminium Nitride, because it has good electromechanical coupling, it is very stable, non-toxic, environmentally friendly and compatible with microelectronic IC-processing. Specific requirements for piezoelectric AlN thin film are purity, stoichiometry, orientation in the (0001) plane and the polarity has to be homogeneous. In this work we report on the influence of the underlayer (Ni, Ta, Ti and TiW) of the bottom electrode Molybdenum on the quality of piezoelectric AlN.

AB - Piezoelectric materials are applied in integrated oscillators for microradios in ubiquitous communication. Key parameters include ultra-low power consumption, microsize, low-cost, high spectral purity and sufficient tenability. The material of choice for thin film BAW (Bulk Acoustic Wave) resonator is Aluminium Nitride, because it has good electromechanical coupling, it is very stable, non-toxic, environmentally friendly and compatible with microelectronic IC-processing. Specific requirements for piezoelectric AlN thin film are purity, stoichiometry, orientation in the (0001) plane and the polarity has to be homogeneous. In this work we report on the influence of the underlayer (Ni, Ta, Ti and TiW) of the bottom electrode Molybdenum on the quality of piezoelectric AlN.

KW - AlN, aluminium nitride

KW - piezoelectric thin film

KW - RF-resonators

KW - film growth

M3 - Conference article

T2 - 11th European Meeting on Ferroelectricity

Y2 - 3 September 2007 through 7 September 2007

ER -

Influence of the seed layer on the crystalline structure and piezoelectric properties of sputter-deposited AlN-films

Abstract

Conference

Keywords

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