Abstract
A layered infrared emitter structure includes only semi-transparent metal layers, preferably one semi-transparent metal layer, and one or more dielectric layers on both sides of the semi-transparent metal layer. Further, an electric heating wiring is arranged in or between any of the dielectric layers to heat the semi-transparent metal layer up to a required infrared emission temperature, preferably to a temperature within a range from 400° C. to 1000° C.
Patent family as of 14.12.2021
CN108012357 A 20180508 CN201711017933 20171026
CN108012357 B 20200922 CN201711017933 20171026
EP3315929 A1 20180502 EP20170198638 20171026 FI127446 B 20180615 FI20160005816 20161028 FI20165816 A 20180429 FI20160005816 20161028 FI20165816 L 20180429 FI20160005816 20161028 JP2018073812 A2 20180510 JP20170193254 20171003 JP6543674 B2 20190710 JP20170193254 20171003 US10001409 BB 20180619 US20170720079 20170929 US2018120158 AA 20180503 US20170720079 20170929
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| Original language | English |
|---|---|
| Patent number | US2018120158 |
| IPC | G01N 21/ 35 A I |
| Priority date | 28/10/16 |
| Publication status | Published - 3 May 2018 |
| MoE publication type | H1 Granted patent |