Infrared spectroscopy study of a poly-silicon film for optimizing the boron-implanting dose

Mikko Tuohiniemi, Martti Blomberg, Feng Gao

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

An experiment was carried out for recording the infrared transmission between 3 and 16 μm for a free-standing poly-silicon (Si) thin film as a function of the boron-ion implanting. The optical constants were extracted in order to optimize the postdeposition implanting of the membranes in a surface micromachined Fabry-Perot interferometer for the thermal infrared. The free-carrier concentration must not degrade the refractive index n significantly since a high and constant value over the application wavelength range is desired. Moreover, an increase in the extinction coefficient k is detrimental for the interferometer performance. On the other hand, poly-Si electrical conductivity must be doped high enough to avoid static charging and to prevent any layout-dependent distribution of the applied control voltage. We applied the variable-angle transmission spectrometry for recording the data of suspended poly-Si membranes, doped with different levels of implanting dose. The Drude model dispersion formula was exploited for extracting the optical constants n(λ) and k(λ). The optical constants are presented as a function of the dopant concentration and the electrical resistivity.
Original languageEnglish
Pages (from-to)1207-1212
Number of pages5
JournalJournal of Microelectromechanical Systems
Volume22
Issue number5
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

Fingerprint

Optical constants
Boron
Infrared spectroscopy
Silicon
Membranes
Light extinction
Fabry-Perot interferometers
Infrared transmission
Voltage control
Interferometers
Spectrometry
Dosimetry
Carrier concentration
Refractive index
Doping (additives)
Infrared radiation
Thin films
Wavelength
Ions
Experiments

Keywords

  • boron
  • implanting
  • optical constants
  • polysilicon

Cite this

@article{6aef553bd5274f20954634829dad95b7,
title = "Infrared spectroscopy study of a poly-silicon film for optimizing the boron-implanting dose",
abstract = "An experiment was carried out for recording the infrared transmission between 3 and 16 μm for a free-standing poly-silicon (Si) thin film as a function of the boron-ion implanting. The optical constants were extracted in order to optimize the postdeposition implanting of the membranes in a surface micromachined Fabry-Perot interferometer for the thermal infrared. The free-carrier concentration must not degrade the refractive index n significantly since a high and constant value over the application wavelength range is desired. Moreover, an increase in the extinction coefficient k is detrimental for the interferometer performance. On the other hand, poly-Si electrical conductivity must be doped high enough to avoid static charging and to prevent any layout-dependent distribution of the applied control voltage. We applied the variable-angle transmission spectrometry for recording the data of suspended poly-Si membranes, doped with different levels of implanting dose. The Drude model dispersion formula was exploited for extracting the optical constants n(λ) and k(λ). The optical constants are presented as a function of the dopant concentration and the electrical resistivity.",
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Infrared spectroscopy study of a poly-silicon film for optimizing the boron-implanting dose. / Tuohiniemi, Mikko; Blomberg, Martti; Gao, Feng.

In: Journal of Microelectromechanical Systems, Vol. 22, No. 5, 2013, p. 1207-1212.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Infrared spectroscopy study of a poly-silicon film for optimizing the boron-implanting dose

AU - Tuohiniemi, Mikko

AU - Blomberg, Martti

AU - Gao, Feng

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N2 - An experiment was carried out for recording the infrared transmission between 3 and 16 μm for a free-standing poly-silicon (Si) thin film as a function of the boron-ion implanting. The optical constants were extracted in order to optimize the postdeposition implanting of the membranes in a surface micromachined Fabry-Perot interferometer for the thermal infrared. The free-carrier concentration must not degrade the refractive index n significantly since a high and constant value over the application wavelength range is desired. Moreover, an increase in the extinction coefficient k is detrimental for the interferometer performance. On the other hand, poly-Si electrical conductivity must be doped high enough to avoid static charging and to prevent any layout-dependent distribution of the applied control voltage. We applied the variable-angle transmission spectrometry for recording the data of suspended poly-Si membranes, doped with different levels of implanting dose. The Drude model dispersion formula was exploited for extracting the optical constants n(λ) and k(λ). The optical constants are presented as a function of the dopant concentration and the electrical resistivity.

AB - An experiment was carried out for recording the infrared transmission between 3 and 16 μm for a free-standing poly-silicon (Si) thin film as a function of the boron-ion implanting. The optical constants were extracted in order to optimize the postdeposition implanting of the membranes in a surface micromachined Fabry-Perot interferometer for the thermal infrared. The free-carrier concentration must not degrade the refractive index n significantly since a high and constant value over the application wavelength range is desired. Moreover, an increase in the extinction coefficient k is detrimental for the interferometer performance. On the other hand, poly-Si electrical conductivity must be doped high enough to avoid static charging and to prevent any layout-dependent distribution of the applied control voltage. We applied the variable-angle transmission spectrometry for recording the data of suspended poly-Si membranes, doped with different levels of implanting dose. The Drude model dispersion formula was exploited for extracting the optical constants n(λ) and k(λ). The optical constants are presented as a function of the dopant concentration and the electrical resistivity.

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KW - optical constants

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