Infrared spectroscopy study of a poly-silicon film for optimizing the boron-implanting dose

Mikko Tuohiniemi, Martti Blomberg, Feng Gao

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    An experiment was carried out for recording the infrared transmission between 3 and 16 μm for a free-standing poly-silicon (Si) thin film as a function of the boron-ion implanting. The optical constants were extracted in order to optimize the postdeposition implanting of the membranes in a surface micromachined Fabry-Perot interferometer for the thermal infrared. The free-carrier concentration must not degrade the refractive index n significantly since a high and constant value over the application wavelength range is desired. Moreover, an increase in the extinction coefficient k is detrimental for the interferometer performance. On the other hand, poly-Si electrical conductivity must be doped high enough to avoid static charging and to prevent any layout-dependent distribution of the applied control voltage. We applied the variable-angle transmission spectrometry for recording the data of suspended poly-Si membranes, doped with different levels of implanting dose. The Drude model dispersion formula was exploited for extracting the optical constants n(λ) and k(λ). The optical constants are presented as a function of the dopant concentration and the electrical resistivity.
    Original languageEnglish
    Pages (from-to)1207-1212
    Number of pages5
    JournalJournal of Microelectromechanical Systems
    Volume22
    Issue number5
    DOIs
    Publication statusPublished - 2013
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Optical constants
    Boron
    Infrared spectroscopy
    Silicon
    Membranes
    Light extinction
    Fabry-Perot interferometers
    Infrared transmission
    Voltage control
    Interferometers
    Spectrometry
    Dosimetry
    Carrier concentration
    Refractive index
    Doping (additives)
    Infrared radiation
    Thin films
    Wavelength
    Ions
    Experiments

    Keywords

    • boron
    • implanting
    • optical constants
    • polysilicon

    Cite this

    @article{6aef553bd5274f20954634829dad95b7,
    title = "Infrared spectroscopy study of a poly-silicon film for optimizing the boron-implanting dose",
    abstract = "An experiment was carried out for recording the infrared transmission between 3 and 16 μm for a free-standing poly-silicon (Si) thin film as a function of the boron-ion implanting. The optical constants were extracted in order to optimize the postdeposition implanting of the membranes in a surface micromachined Fabry-Perot interferometer for the thermal infrared. The free-carrier concentration must not degrade the refractive index n significantly since a high and constant value over the application wavelength range is desired. Moreover, an increase in the extinction coefficient k is detrimental for the interferometer performance. On the other hand, poly-Si electrical conductivity must be doped high enough to avoid static charging and to prevent any layout-dependent distribution of the applied control voltage. We applied the variable-angle transmission spectrometry for recording the data of suspended poly-Si membranes, doped with different levels of implanting dose. The Drude model dispersion formula was exploited for extracting the optical constants n(λ) and k(λ). The optical constants are presented as a function of the dopant concentration and the electrical resistivity.",
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    author = "Mikko Tuohiniemi and Martti Blomberg and Feng Gao",
    year = "2013",
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    language = "English",
    volume = "22",
    pages = "1207--1212",
    journal = "Journal of Microelectromechanical Systems",
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    Infrared spectroscopy study of a poly-silicon film for optimizing the boron-implanting dose. / Tuohiniemi, Mikko; Blomberg, Martti; Gao, Feng.

    In: Journal of Microelectromechanical Systems, Vol. 22, No. 5, 2013, p. 1207-1212.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Infrared spectroscopy study of a poly-silicon film for optimizing the boron-implanting dose

    AU - Tuohiniemi, Mikko

    AU - Blomberg, Martti

    AU - Gao, Feng

    PY - 2013

    Y1 - 2013

    N2 - An experiment was carried out for recording the infrared transmission between 3 and 16 μm for a free-standing poly-silicon (Si) thin film as a function of the boron-ion implanting. The optical constants were extracted in order to optimize the postdeposition implanting of the membranes in a surface micromachined Fabry-Perot interferometer for the thermal infrared. The free-carrier concentration must not degrade the refractive index n significantly since a high and constant value over the application wavelength range is desired. Moreover, an increase in the extinction coefficient k is detrimental for the interferometer performance. On the other hand, poly-Si electrical conductivity must be doped high enough to avoid static charging and to prevent any layout-dependent distribution of the applied control voltage. We applied the variable-angle transmission spectrometry for recording the data of suspended poly-Si membranes, doped with different levels of implanting dose. The Drude model dispersion formula was exploited for extracting the optical constants n(λ) and k(λ). The optical constants are presented as a function of the dopant concentration and the electrical resistivity.

    AB - An experiment was carried out for recording the infrared transmission between 3 and 16 μm for a free-standing poly-silicon (Si) thin film as a function of the boron-ion implanting. The optical constants were extracted in order to optimize the postdeposition implanting of the membranes in a surface micromachined Fabry-Perot interferometer for the thermal infrared. The free-carrier concentration must not degrade the refractive index n significantly since a high and constant value over the application wavelength range is desired. Moreover, an increase in the extinction coefficient k is detrimental for the interferometer performance. On the other hand, poly-Si electrical conductivity must be doped high enough to avoid static charging and to prevent any layout-dependent distribution of the applied control voltage. We applied the variable-angle transmission spectrometry for recording the data of suspended poly-Si membranes, doped with different levels of implanting dose. The Drude model dispersion formula was exploited for extracting the optical constants n(λ) and k(λ). The optical constants are presented as a function of the dopant concentration and the electrical resistivity.

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    KW - implanting

    KW - optical constants

    KW - polysilicon

    U2 - 10.1109/JMEMS.2013.2262580

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    ER -