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InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates

  • Pekka Törmä
  • , Muhammad Ali
  • , Olli Svensk
  • , Sami Suihkonen
  • , Markku Sopanen
  • , Harri Lipsanen
  • , Mikael Mulot
  • , Maxim A. Odnoblyudov
  • , Vladislav E. Bougrov
  • Aalto University
  • Optogan GmbH

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Pages (from-to)3152-3156
Number of pages5
JournalCrystEngComm
Volume12
Issue number10
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

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