Inkjet-Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal-Oxide Thin-Film Transistors with Low Voltage Operation

Liam Gillan (Corresponding Author), Shujie Li, Jouko Lahtinen, Chih Hung Chang, Ari Alastalo, Jaakko Leppäniemi

Research output: Contribution to journalArticleScientificpeer-review

18 Citations (Scopus)
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Additive solution process patterning, such as inkjet printing, is desirable for high-throughput roll-to-roll and sheet fabrication environments of electronics manufacturing because it can help to reduce cost by conserving active materials and circumventing multistep processing. This paper reports inkjet printing of YxAl2−xO3 gate dielectric, In2O3 semiconductor, and a polyethyleneimine-doped In2O3 interfacial charge injection layer to achieve a thin-film transistor (TFT) mobility (μsat) of ≈1 cm2 V−1 s−1 at a low 3 V operating voltage. When the dielectric material is annealed at 350 °C, plasma treatment induces low-frequency capacitance instability, leading to overestimation of mobility. On the contrary, films annealed at 500 °C show stable capacitance from 1 MHz down to 0.1 Hz. This result highlights the importance of low-frequency capacitance characterization of solution-processed dielectrics, especially if plasma treatment is applied before subsequent processing steps. This study progresses metal-oxide TFT fabrication toward fully inkjet-printed thin-film electronics.

Original languageEnglish
Article number2100728
JournalAdvanced Materials Interfaces
Issue number12
Publication statusPublished - 23 Jun 2021
MoE publication typeA1 Journal article-refereed


VTT's work was funded in part by the Academy of Finland under Grant Agreement No. 305450 (project ROXI) and No. 328627 (project FLEXRAD). Oregon State University's work was supported by the Walmart Manufacturing Innovation Foundation, Grant #29955421, and the US National Science Foundation, Grant No. CBET 1449383. J.L. performed part of the work while he was a visiting scholar at the Oregon State University. The authors acknowledge the provision of facilities of the Aalto University at OtaNano – Nanomicroscopy Center (Aalto‐NMC).


  • high-κ oxide dielectrics
  • inkjet printing
  • printed electronics
  • solution-processed oxides
  • thin-film transistors


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