Inkjet-Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal-Oxide Thin-Film Transistors with Low Voltage Operation

Liam Gillan (Corresponding Author), Shujie Li, Jouko Lahtinen, Chih Hung Chang, Ari Alastalo, Jaakko Leppäniemi

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Abstract

Additive solution process patterning, such as inkjet printing, is desirable for high-throughput roll-to-roll and sheet fabrication environments of electronics manufacturing because it can help to reduce cost by conserving active materials and circumventing multistep processing. This paper reports inkjet printing of YxAl2−xO3 gate dielectric, In2O3 semiconductor, and a polyethyleneimine-doped In2O3 interfacial charge injection layer to achieve a thin-film transistor (TFT) mobility (μsat) of ≈1 cm2 V−1 s−1 at a low 3 V operating voltage. When the dielectric material is annealed at 350 °C, plasma treatment induces low-frequency capacitance instability, leading to overestimation of mobility. On the contrary, films annealed at 500 °C show stable capacitance from 1 MHz down to 0.1 Hz. This result highlights the importance of low-frequency capacitance characterization of solution-processed dielectrics, especially if plasma treatment is applied before subsequent processing steps. This study progresses metal-oxide TFT fabrication toward fully inkjet-printed thin-film electronics.

Original languageEnglish
Article number2100728
JournalAdvanced Materials Interfaces
Volume8
Issue number12
DOIs
Publication statusPublished - 23 Jun 2021
MoE publication typeA1 Journal article-refereed

Keywords

  • high-κ oxide dielectrics
  • inkjet printing
  • printed electronics
  • solution-processed oxides
  • thin-film transistors

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