Inkjet-Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal-Oxide Thin-Film Transistors with Low Voltage Operation

Liam Gillan; Shujie Li; Jouko Lahtinen; Chih Hung Chang; Ari Alastalo; Jaakko Leppäniemi

doi:10.1002/admi.202100728

Inkjet-Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal-Oxide Thin-Film Transistors with Low Voltage Operation

Liam Gillan^*
, Shujie Li
, Jouko Lahtinen
, Chih Hung Chang
, Ari Alastalo
, Jaakko Leppäniemi

^*Corresponding author for this work

BA6304 Flexible sensors and devices

Oregon State University
Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

23 Citations (Scopus)

112 Downloads (Pure)

Abstract

Additive solution process patterning, such as inkjet printing, is desirable for high-throughput roll-to-roll and sheet fabrication environments of electronics manufacturing because it can help to reduce cost by conserving active materials and circumventing multistep processing. This paper reports inkjet printing of Y_xAl₂₋_xO₃ gate dielectric, In₂O₃ semiconductor, and a polyethyleneimine-doped In₂O₃ interfacial charge injection layer to achieve a thin-film transistor (TFT) mobility (μ_sat) of ≈1 cm² V⁻¹ s⁻¹ at a low 3 V operating voltage. When the dielectric material is annealed at 350 °C, plasma treatment induces low-frequency capacitance instability, leading to overestimation of mobility. On the contrary, films annealed at 500 °C show stable capacitance from 1 MHz down to 0.1 Hz. This result highlights the importance of low-frequency capacitance characterization of solution-processed dielectrics, especially if plasma treatment is applied before subsequent processing steps. This study progresses metal-oxide TFT fabrication toward fully inkjet-printed thin-film electronics.

Original language	English
Article number	2100728
Journal	Advanced Materials Interfaces
Volume	8
Issue number	12
DOIs	https://doi.org/10.1002/admi.202100728
Publication status	Published - 23 Jun 2021
MoE publication type	A1 Journal article-refereed

Funding

VTT's work was funded in part by the Academy of Finland under Grant Agreement No. 305450 (project ROXI) and No. 328627 (project FLEXRAD). Oregon State University's work was supported by the Walmart Manufacturing Innovation Foundation, Grant #29955421, and the US National Science Foundation, Grant No. CBET 1449383. J.L. performed part of the work while he was a visiting scholar at the Oregon State University. The authors acknowledge the provision of facilities of the Aalto University at OtaNano – Nanomicroscopy Center (Aalto‐NMC).

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

high-κ oxide dielectrics
inkjet printing
printed electronics
solution-processed oxides
thin-film transistors

Access to Document

10.1002/admi.202100728Licence: CC BY

admi.202100728Final published version, 1.53 MBLicence: CC BY

Cite this

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title = "Inkjet-Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal-Oxide Thin-Film Transistors with Low Voltage Operation",

abstract = "Additive solution process patterning, such as inkjet printing, is desirable for high-throughput roll-to-roll and sheet fabrication environments of electronics manufacturing because it can help to reduce cost by conserving active materials and circumventing multistep processing. This paper reports inkjet printing of YxAl2−xO3 gate dielectric, In2O3 semiconductor, and a polyethyleneimine-doped In2O3 interfacial charge injection layer to achieve a thin-film transistor (TFT) mobility (μsat) of ≈1 cm2 V−1 s−1 at a low 3 V operating voltage. When the dielectric material is annealed at 350 °C, plasma treatment induces low-frequency capacitance instability, leading to overestimation of mobility. On the contrary, films annealed at 500 °C show stable capacitance from 1 MHz down to 0.1 Hz. This result highlights the importance of low-frequency capacitance characterization of solution-processed dielectrics, especially if plasma treatment is applied before subsequent processing steps. This study progresses metal-oxide TFT fabrication toward fully inkjet-printed thin-film electronics.",

keywords = "high-κ oxide dielectrics, inkjet printing, printed electronics, solution-processed oxides, thin-film transistors",

author = "Liam Gillan and Shujie Li and Jouko Lahtinen and Chang, \{Chih Hung\} and Ari Alastalo and Jaakko Lepp{\"a}niemi",

year = "2021",

month = jun,

day = "23",

doi = "10.1002/admi.202100728",

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AU - Chang, Chih Hung

AU - Alastalo, Ari

AU - Leppäniemi, Jaakko

PY - 2021/6/23

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N2 - Additive solution process patterning, such as inkjet printing, is desirable for high-throughput roll-to-roll and sheet fabrication environments of electronics manufacturing because it can help to reduce cost by conserving active materials and circumventing multistep processing. This paper reports inkjet printing of YxAl2−xO3 gate dielectric, In2O3 semiconductor, and a polyethyleneimine-doped In2O3 interfacial charge injection layer to achieve a thin-film transistor (TFT) mobility (μsat) of ≈1 cm2 V−1 s−1 at a low 3 V operating voltage. When the dielectric material is annealed at 350 °C, plasma treatment induces low-frequency capacitance instability, leading to overestimation of mobility. On the contrary, films annealed at 500 °C show stable capacitance from 1 MHz down to 0.1 Hz. This result highlights the importance of low-frequency capacitance characterization of solution-processed dielectrics, especially if plasma treatment is applied before subsequent processing steps. This study progresses metal-oxide TFT fabrication toward fully inkjet-printed thin-film electronics.

AB - Additive solution process patterning, such as inkjet printing, is desirable for high-throughput roll-to-roll and sheet fabrication environments of electronics manufacturing because it can help to reduce cost by conserving active materials and circumventing multistep processing. This paper reports inkjet printing of YxAl2−xO3 gate dielectric, In2O3 semiconductor, and a polyethyleneimine-doped In2O3 interfacial charge injection layer to achieve a thin-film transistor (TFT) mobility (μsat) of ≈1 cm2 V−1 s−1 at a low 3 V operating voltage. When the dielectric material is annealed at 350 °C, plasma treatment induces low-frequency capacitance instability, leading to overestimation of mobility. On the contrary, films annealed at 500 °C show stable capacitance from 1 MHz down to 0.1 Hz. This result highlights the importance of low-frequency capacitance characterization of solution-processed dielectrics, especially if plasma treatment is applied before subsequent processing steps. This study progresses metal-oxide TFT fabrication toward fully inkjet-printed thin-film electronics.

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Inkjet-Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal-Oxide Thin-Film Transistors with Low Voltage Operation

Abstract

Funding

UN SDGs

Keywords

Access to Document

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OtaNano

Cite this

Inkjet-Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal-Oxide Thin-Film Transistors with Low Voltage Operation

Abstract

Funding

UN SDGs

Keywords

Access to Document

Other files and links

Fingerprint

Equipment

OtaNano

Cite this