InP homojunction solar cells grown by gas-source molecular beam epitaxy

J.P. Zibin, K. Rakennus, K. Tappura, G. Zhang, J. Lammasniemi, H. Asonen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

2 Citations (Scopus)
Original languageEnglish
Title of host publicationProceedings of the Third International Conference Indium Phosphide and Related Materials
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages48-51
ISBN (Print)0-87942-626-8
DOIs
Publication statusPublished - 1991
MoE publication typeA4 Article in a conference publication

Cite this

Zibin, J. P., Rakennus, K., Tappura, K., Zhang, G., Lammasniemi, J., & Asonen, H. (1991). InP homojunction solar cells grown by gas-source molecular beam epitaxy. In Proceedings of the Third International Conference Indium Phosphide and Related Materials (pp. 48-51). Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/ICIPRM.1991.147290
Zibin, J.P. ; Rakennus, K. ; Tappura, K. ; Zhang, G. ; Lammasniemi, J. ; Asonen, H. / InP homojunction solar cells grown by gas-source molecular beam epitaxy. Proceedings of the Third International Conference Indium Phosphide and Related Materials. Institute of Electrical and Electronic Engineers IEEE, 1991. pp. 48-51
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Zibin, JP, Rakennus, K, Tappura, K, Zhang, G, Lammasniemi, J & Asonen, H 1991, InP homojunction solar cells grown by gas-source molecular beam epitaxy. in Proceedings of the Third International Conference Indium Phosphide and Related Materials. Institute of Electrical and Electronic Engineers IEEE, pp. 48-51. https://doi.org/10.1109/ICIPRM.1991.147290

InP homojunction solar cells grown by gas-source molecular beam epitaxy. / Zibin, J.P.; Rakennus, K.; Tappura, K.; Zhang, G.; Lammasniemi, J.; Asonen, H.

Proceedings of the Third International Conference Indium Phosphide and Related Materials. Institute of Electrical and Electronic Engineers IEEE, 1991. p. 48-51.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - InP homojunction solar cells grown by gas-source molecular beam epitaxy

AU - Zibin, J.P.

AU - Rakennus, K.

AU - Tappura, K.

AU - Zhang, G.

AU - Lammasniemi, J.

AU - Asonen, H.

PY - 1991

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U2 - 10.1109/ICIPRM.1991.147290

DO - 10.1109/ICIPRM.1991.147290

M3 - Conference article in proceedings

SN - 0-87942-626-8

SP - 48

EP - 51

BT - Proceedings of the Third International Conference Indium Phosphide and Related Materials

PB - Institute of Electrical and Electronic Engineers IEEE

ER -

Zibin JP, Rakennus K, Tappura K, Zhang G, Lammasniemi J, Asonen H. InP homojunction solar cells grown by gas-source molecular beam epitaxy. In Proceedings of the Third International Conference Indium Phosphide and Related Materials. Institute of Electrical and Electronic Engineers IEEE. 1991. p. 48-51 https://doi.org/10.1109/ICIPRM.1991.147290