InP homojunction solar cells grown by gas-source molecular beam epitaxy

J.P. Zibin, K. Rakennus, K. Tappura, G. Zhang, J. Lammasniemi, H. Asonen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Original language	English
Title of host publication	Proceedings of the Third International Conference Indium Phosphide and Related Materials
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	48-51
ISBN (Print)	0-87942-626-8
DOIs	https://doi.org/10.1109/ICIPRM.1991.147290
Publication status	Published - 1991
MoE publication type	A4 Article in a conference publication

Access to Document

@inproceedings{a13b5faa1cf042dd91e508d7e3e97752,

title = "InP homojunction solar cells grown by gas-source molecular beam epitaxy",

author = "J.P. Zibin and K. Rakennus and K. Tappura and G. Zhang and J. Lammasniemi and H. Asonen",

year = "1991",

doi = "10.1109/ICIPRM.1991.147290",

language = "English",

isbn = "0-87942-626-8",

pages = "48--51",

booktitle = "Proceedings of the Third International Conference Indium Phosphide and Related Materials",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

InP homojunction solar cells grown by gas-source molecular beam epitaxy. / Zibin, J.P.; Rakennus, K.; Tappura, K. et al.
Proceedings of the Third International Conference Indium Phosphide and Related Materials. IEEE Institute of Electrical and Electronic Engineers, 1991. p. 48-51.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - InP homojunction solar cells grown by gas-source molecular beam epitaxy

AU - Zibin, J.P.

AU - Rakennus, K.

AU - Tappura, K.

AU - Zhang, G.

AU - Lammasniemi, J.

AU - Asonen, H.

PY - 1991

Y1 - 1991

UR - https://www.scopus.com/pages/publications/0026376631

U2 - 10.1109/ICIPRM.1991.147290

DO - 10.1109/ICIPRM.1991.147290

M3 - Conference article in proceedings

SN - 0-87942-626-8

SP - 48

EP - 51

BT - Proceedings of the Third International Conference Indium Phosphide and Related Materials

PB - IEEE Institute of Electrical and Electronic Engineers

ER -