Insulators and device geometry in polymer field effect transistors

Henrik Sandberg (Corresponding Author), Tomas G Bäcklund, Ronald Österbacka, Maxim N. Shkunov, David Sparrowe, Iain McCulloch, Henrik Stubb

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)


    In order to increase the stability and practicality of polymer field effect transistor (FET) devices, different manufacturing parameters are investigated, including choice of material, processing solvent, and device geometry. It is found that the performance of the devices is closely related to the choice of gate insulator material, the applied sample configuration and the order of layer deposition. Thermally cross-linked polymers are investigated as insulator materials. For a top gate configuration the key parameter is the choice of insulator material (and solvent) while for the bottom gate configuration, device performance is largely dependent on interfacial properties, which may be controlled for example by surface treatment. This study shows that care must be taken in designing and applying the gate insulator layer of a FET.

    Original languageEnglish
    Pages (from-to)142-146
    Number of pages5
    JournalOrganic Electronics
    Issue number3
    Publication statusPublished - 1 Jun 2005
    MoE publication typeA1 Journal article-refereed


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