Insulators and device geometry in polymer field effect transistors

Henrik Sandberg; Tomas G. Bäcklund; Ronald Österbacka; Maxim N. Shkunov; David Sparrowe; Iain McCulloch; Henrik Stubb

doi:10.1016/j.orgel.2005.04.001

Insulators and device geometry in polymer field effect transistors

Henrik Sandberg^*
, Tomas G. Bäcklund
, Ronald Österbacka
, Maxim N. Shkunov
, David Sparrowe
, Iain McCulloch
, Henrik Stubb

^*Corresponding author for this work

Åbo Akademi University
Merck Chemicals

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Abstract

In order to increase the stability and practicality of polymer field effect transistor (FET) devices, different manufacturing parameters are investigated, including choice of material, processing solvent, and device geometry. It is found that the performance of the devices is closely related to the choice of gate insulator material, the applied sample configuration and the order of layer deposition. Thermally cross-linked polymers are investigated as insulator materials. For a top gate configuration the key parameter is the choice of insulator material (and solvent) while for the bottom gate configuration, device performance is largely dependent on interfacial properties, which may be controlled for example by surface treatment. This study shows that care must be taken in designing and applying the gate insulator layer of a FET.

Original language	English
Pages (from-to)	142-146
Journal	Organic Electronics
Volume	6
Issue number	3
DOIs	https://doi.org/10.1016/j.orgel.2005.04.001
Publication status	Published - 1 Jun 2005
MoE publication type	A1 Journal article-refereed

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

address,corresponding author,electronic products based on,emerged recently,field effect transistor,insulator,organic,other organic materials have,polyalkylthiophene,polyhydroxystyrene,polymers and,polyvinylphenol,vtt information tech-

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10.1016/j.orgel.2005.04.001

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title = "Insulators and device geometry in polymer field effect transistors",

abstract = "In order to increase the stability and practicality of polymer field effect transistor (FET) devices, different manufacturing parameters are investigated, including choice of material, processing solvent, and device geometry. It is found that the performance of the devices is closely related to the choice of gate insulator material, the applied sample configuration and the order of layer deposition. Thermally cross-linked polymers are investigated as insulator materials. For a top gate configuration the key parameter is the choice of insulator material (and solvent) while for the bottom gate configuration, device performance is largely dependent on interfacial properties, which may be controlled for example by surface treatment. This study shows that care must be taken in designing and applying the gate insulator layer of a FET.",

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T1 - Insulators and device geometry in polymer field effect transistors

AU - Sandberg, Henrik

AU - Bäcklund, Tomas G.

AU - Österbacka, Ronald

AU - Shkunov, Maxim N.

AU - Sparrowe, David

AU - McCulloch, Iain

AU - Stubb, Henrik

PY - 2005/6/1

Y1 - 2005/6/1

N2 - In order to increase the stability and practicality of polymer field effect transistor (FET) devices, different manufacturing parameters are investigated, including choice of material, processing solvent, and device geometry. It is found that the performance of the devices is closely related to the choice of gate insulator material, the applied sample configuration and the order of layer deposition. Thermally cross-linked polymers are investigated as insulator materials. For a top gate configuration the key parameter is the choice of insulator material (and solvent) while for the bottom gate configuration, device performance is largely dependent on interfacial properties, which may be controlled for example by surface treatment. This study shows that care must be taken in designing and applying the gate insulator layer of a FET.

AB - In order to increase the stability and practicality of polymer field effect transistor (FET) devices, different manufacturing parameters are investigated, including choice of material, processing solvent, and device geometry. It is found that the performance of the devices is closely related to the choice of gate insulator material, the applied sample configuration and the order of layer deposition. Thermally cross-linked polymers are investigated as insulator materials. For a top gate configuration the key parameter is the choice of insulator material (and solvent) while for the bottom gate configuration, device performance is largely dependent on interfacial properties, which may be controlled for example by surface treatment. This study shows that care must be taken in designing and applying the gate insulator layer of a FET.

KW - address,corresponding author,electronic products based on,emerged recently,field effect transistor,insulator,organic,other organic materials have,polyalkylthiophene,polyhydroxystyrene,polymers and,polyvinylphenol,vtt information tech-

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DO - 10.1016/j.orgel.2005.04.001

M3 - Article

SN - 1566-1199

VL - 6

SP - 142

EP - 146

JO - Organic Electronics

JF - Organic Electronics

IS - 3

ER -

Insulators and device geometry in polymer field effect transistors

Abstract

UN SDGs

Keywords

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