Integrated optical switch based on SOI-technology

Timo Aalto, Päivi Heimala, Pekka Katila

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Abstract

An integrated optical thermo-optic switch has been designed using silicon-on-insulator (SOI) waveguide technology. The switch consists of two cascaded waveguide couplers with thermo-optic heaters on the waveguide arms connecting the two couplers. A detailed modelling of the optical and thermal operation of the switch has been made. A single-mode ridge waveguide structure with large cross-section was designed. The fibre-waveguide mode coupling loss was calculated to be 0.6 dB. According to the thermal modelling, a 3 K temperature change is enough to switch the output state of the device. The switching time is expected to be 0.2 ms and the electrical power consumption 120 mW.
Original languageEnglish
Pages (from-to)123-126
JournalPhysica Scripta: Topical Issues
VolumeT79
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

Fingerprint

Optical Switch
Silicon-on-insulator
Waveguide
switches
insulators
waveguides
Switch
silicon
Coupler
couplers
Optics
optics
Thermal Modeling
Mode Coupling
Ridge
Single Mode
heaters
coupled modes
Power Consumption
ridges

Cite this

@article{173290f53a97473d88aa55bf104d0078,
title = "Integrated optical switch based on SOI-technology",
abstract = "An integrated optical thermo-optic switch has been designed using silicon-on-insulator (SOI) waveguide technology. The switch consists of two cascaded waveguide couplers with thermo-optic heaters on the waveguide arms connecting the two couplers. A detailed modelling of the optical and thermal operation of the switch has been made. A single-mode ridge waveguide structure with large cross-section was designed. The fibre-waveguide mode coupling loss was calculated to be 0.6 dB. According to the thermal modelling, a 3 K temperature change is enough to switch the output state of the device. The switching time is expected to be 0.2 ms and the electrical power consumption 120 mW.",
author = "Timo Aalto and P{\"a}ivi Heimala and Pekka Katila",
note = "Project code: E6SU00345",
year = "1999",
doi = "10.1238/Physica.Topical.079a00123",
language = "English",
volume = "T79",
pages = "123--126",
journal = "Physica Scripta",
issn = "0031-8949",
publisher = "Institute of Physics IOP",

}

Integrated optical switch based on SOI-technology. / Aalto, Timo; Heimala, Päivi; Katila, Pekka.

In: Physica Scripta: Topical Issues, Vol. T79, 1999, p. 123-126.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Integrated optical switch based on SOI-technology

AU - Aalto, Timo

AU - Heimala, Päivi

AU - Katila, Pekka

N1 - Project code: E6SU00345

PY - 1999

Y1 - 1999

N2 - An integrated optical thermo-optic switch has been designed using silicon-on-insulator (SOI) waveguide technology. The switch consists of two cascaded waveguide couplers with thermo-optic heaters on the waveguide arms connecting the two couplers. A detailed modelling of the optical and thermal operation of the switch has been made. A single-mode ridge waveguide structure with large cross-section was designed. The fibre-waveguide mode coupling loss was calculated to be 0.6 dB. According to the thermal modelling, a 3 K temperature change is enough to switch the output state of the device. The switching time is expected to be 0.2 ms and the electrical power consumption 120 mW.

AB - An integrated optical thermo-optic switch has been designed using silicon-on-insulator (SOI) waveguide technology. The switch consists of two cascaded waveguide couplers with thermo-optic heaters on the waveguide arms connecting the two couplers. A detailed modelling of the optical and thermal operation of the switch has been made. A single-mode ridge waveguide structure with large cross-section was designed. The fibre-waveguide mode coupling loss was calculated to be 0.6 dB. According to the thermal modelling, a 3 K temperature change is enough to switch the output state of the device. The switching time is expected to be 0.2 ms and the electrical power consumption 120 mW.

U2 - 10.1238/Physica.Topical.079a00123

DO - 10.1238/Physica.Topical.079a00123

M3 - Article

VL - T79

SP - 123

EP - 126

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

ER -