Integrated SiGe Detectors for Si Photonic Sensor Platforms

Grégory Pandraud, Silvana Milosavljevic, Amir Sammak, Matteo Cherchi, Aleksandar Jovic, Pasqualina Sarro

    Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review


    In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical Coherence Tomography.
    Original languageEnglish
    Number of pages5
    Issue number4
    Publication statusPublished - 11 Aug 2017
    MoE publication typeA4 Article in a conference publication
    EventEurosensors 2017 - Paris, France
    Duration: 3 Sept 20176 Sept 2017


    • Si photonics
    • SiGe detectors
    • optical coherence tomography
    • OtaNano


    Dive into the research topics of 'Integrated SiGe Detectors for Si Photonic Sensor Platforms'. Together they form a unique fingerprint.

    Cite this