Integrated SiGe Detectors for Si Photonic Sensor Platforms

Grégory Pandraud, Silvana Milosavljevic, Amir Sammak, Matteo Cherchi, Aleksandar Jovic, Pasqualina Sarro

    Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

    Abstract

    In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical Coherence Tomography.
    Original languageEnglish
    Number of pages5
    JournalProceedings
    Volume1
    Issue number4
    DOIs
    Publication statusPublished - 11 Aug 2017
    MoE publication typeA4 Article in a conference publication
    EventEurosensors 2017 - Paris, France
    Duration: 3 Sep 20176 Sep 2017

    Keywords

    • Si photonics
    • SiGe detectors
    • optical coherence tomography
    • OtaNano

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    Pandraud, G., Milosavljevic, S., Sammak, A., Cherchi, M., Jovic, A., & Sarro, P. (2017). Integrated SiGe Detectors for Si Photonic Sensor Platforms. Proceedings, 1(4). https://doi.org/10.3390/proceedings1040559