Integrated SiGe Detectors for Si Photonic Sensor Platforms

Grégory Pandraud; Silvana Milosavljevic; Amir Sammak; Matteo Cherchi; Aleksandar Jovic; Pasqualina Sarro

doi:10.3390/proceedings1040559

Integrated SiGe Detectors for Si Photonic Sensor Platforms

Grégory Pandraud
, Silvana Milosavljevic
, Amir Sammak
, Matteo Cherchi
, Aleksandar Jovic
, Pasqualina Sarro

Delft University of Technology

Research output: Contribution to journal › Article in a proceedings journal › Scientific › peer-review

Abstract

In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical Coherence Tomography.

Original language	English
Number of pages	5
Journal	Proceedings
Volume	1
Issue number	4
DOIs	https://doi.org/10.3390/proceedings1040559
Publication status	Published - 11 Aug 2017
MoE publication type	A4 Article in a conference publication
Event	Eurosensors 2017 - Paris, France Duration: 3 Sept 2017 → 6 Sept 2017

Keywords

Si photonics
SiGe detectors
optical coherence tomography
OtaNano

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10.3390/proceedings1040559Licence: CC BY

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title = "Integrated SiGe Detectors for Si Photonic Sensor Platforms",

abstract = "In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical Coherence Tomography.",

keywords = "Si photonics, SiGe detectors, optical coherence tomography, OtaNano",

author = "Gr{\'e}gory Pandraud and Silvana Milosavljevic and Amir Sammak and Matteo Cherchi and Aleksandar Jovic and Pasqualina Sarro",

year = "2017",

month = aug,

day = "11",

doi = "10.3390/proceedings1040559",

language = "English",

volume = "1",

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TY - JOUR

T1 - Integrated SiGe Detectors for Si Photonic Sensor Platforms

AU - Pandraud, Grégory

AU - Milosavljevic, Silvana

AU - Sammak, Amir

AU - Cherchi, Matteo

AU - Jovic, Aleksandar

AU - Sarro, Pasqualina

PY - 2017/8/11

Y1 - 2017/8/11

N2 - In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical Coherence Tomography.

AB - In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical Coherence Tomography.

KW - Si photonics

KW - SiGe detectors

KW - optical coherence tomography

KW - OtaNano

U2 - 10.3390/proceedings1040559

DO - 10.3390/proceedings1040559

M3 - Article in a proceedings journal

SN - 2504-3900

VL - 1

JO - Proceedings

JF - Proceedings

IS - 4

T2 - Eurosensors 2017

Y2 - 3 September 2017 through 6 September 2017

ER -

Integrated SiGe Detectors for Si Photonic Sensor Platforms

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