Integrating III-V, Si, and polymer waveguides for optical interconnects

RAPIDO

Timo Aalto, Mikko Harjanne, Bert Jan Offrein, Charles Caër, Christian Neumeyr, Antonio Malacarne, Mircea Guina, Robert N. Sheehan, Frank H. Peters, Petri Melanen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

2 Citations (Scopus)

Abstract

We present a vision for the hybrid integration of advanced transceivers at 1.3 μm wavelength, and the progress done towards this vision in the EU-funded RAPIDO project. The final goal of the project is to make five demonstrators that show the feasibility of the proposed concepts to make optical interconnects and packet-switched optical networks that are scalable to Pb/s systems in data centers and high performance computing. Simplest transceivers are to be made by combining directly modulated InP VCSELs with 12 μm SOI multiplexers to launch, for example, 200 Gbps data into a single polymer waveguide with 4 channels to connect processors on a single line card. For more advanced transceivers we develop novel dilute nitride amplifiers and modulators that are expected to be more power-efficient and temperatureinsensitive than InP devices. These edge-emitting III-V chips are flip-chip bonded on 3 μm SOI chips that also have polarization and temperature independent multiplexers and low-loss coupling to the 12 μm SOI interposers, enabling to launch up to 640 Gbps data into a standard single mode (SM) fiber. In this paper we present a number of experimental results, including low-loss multiplexers on SOI, zero-birefringence Si waveguides, micron-scale mirrors and bends with 0.1 dB loss, direct modulation of VCSELs up to 40 Gbps, ±0.25μm length control for dilute nitride SOA, strong band edge shifts in dilute nitride EAMs and SM polymer waveguides with 0.4 dB/cm loss.

Original languageEnglish
Title of host publicationOptical Interconnects XVI
PublisherInternational Society for Optics and Photonics SPIE
ISBN (Electronic)9781628419887
DOIs
Publication statusPublished - 1 Jan 2016
MoE publication typeA4 Article in a conference publication
EventOptical Interconnects XVI - San Francisco, United States
Duration: 15 Feb 201617 Feb 2016

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume9753
ISSN (Print)0277-786X

Conference

ConferenceOptical Interconnects XVI
CountryUnited States
CitySan Francisco
Period15/02/1617/02/16

Fingerprint

Polymer Waveguide
Optical Interconnects
optical interconnects
Optical interconnects
SOI (semiconductors)
Nitrides
Polymers
transmitter receivers
Waveguides
multiplexing
Transceivers
waveguides
nitrides
Vertical-cavity Surface-emitting Laser (VCSEL)
chips
Surface emitting lasers
polymers
Chip
Flip chip
embedded atom method

Keywords

  • electro absorption modulator
  • hybrid integration
  • optical interconnect
  • optical interposer
  • optoelectronics
  • polymer photonics
  • semiconductor optical amplifier
  • Silicon photonics
  • VCSEL
  • wavelength multiplexers

Cite this

Aalto, T., Harjanne, M., Offrein, B. J., Caër, C., Neumeyr, C., Malacarne, A., ... Melanen, P. (2016). Integrating III-V, Si, and polymer waveguides for optical interconnects: RAPIDO. In Optical Interconnects XVI [97530D] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 9753 https://doi.org/10.1117/12.2214786
Aalto, Timo ; Harjanne, Mikko ; Offrein, Bert Jan ; Caër, Charles ; Neumeyr, Christian ; Malacarne, Antonio ; Guina, Mircea ; Sheehan, Robert N. ; Peters, Frank H. ; Melanen, Petri. / Integrating III-V, Si, and polymer waveguides for optical interconnects : RAPIDO. Optical Interconnects XVI. International Society for Optics and Photonics SPIE, 2016. (Proceedings of SPIE, Vol. 9753).
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abstract = "We present a vision for the hybrid integration of advanced transceivers at 1.3 μm wavelength, and the progress done towards this vision in the EU-funded RAPIDO project. The final goal of the project is to make five demonstrators that show the feasibility of the proposed concepts to make optical interconnects and packet-switched optical networks that are scalable to Pb/s systems in data centers and high performance computing. Simplest transceivers are to be made by combining directly modulated InP VCSELs with 12 μm SOI multiplexers to launch, for example, 200 Gbps data into a single polymer waveguide with 4 channels to connect processors on a single line card. For more advanced transceivers we develop novel dilute nitride amplifiers and modulators that are expected to be more power-efficient and temperatureinsensitive than InP devices. These edge-emitting III-V chips are flip-chip bonded on 3 μm SOI chips that also have polarization and temperature independent multiplexers and low-loss coupling to the 12 μm SOI interposers, enabling to launch up to 640 Gbps data into a standard single mode (SM) fiber. In this paper we present a number of experimental results, including low-loss multiplexers on SOI, zero-birefringence Si waveguides, micron-scale mirrors and bends with 0.1 dB loss, direct modulation of VCSELs up to 40 Gbps, ±0.25μm length control for dilute nitride SOA, strong band edge shifts in dilute nitride EAMs and SM polymer waveguides with 0.4 dB/cm loss.",
keywords = "electro absorption modulator, hybrid integration, optical interconnect, optical interposer, optoelectronics, polymer photonics, semiconductor optical amplifier, Silicon photonics, VCSEL, wavelength multiplexers",
author = "Timo Aalto and Mikko Harjanne and Offrein, {Bert Jan} and Charles Ca{\"e}r and Christian Neumeyr and Antonio Malacarne and Mircea Guina and Sheehan, {Robert N.} and Peters, {Frank H.} and Petri Melanen",
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Aalto, T, Harjanne, M, Offrein, BJ, Caër, C, Neumeyr, C, Malacarne, A, Guina, M, Sheehan, RN, Peters, FH & Melanen, P 2016, Integrating III-V, Si, and polymer waveguides for optical interconnects: RAPIDO. in Optical Interconnects XVI., 97530D, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 9753, Optical Interconnects XVI, San Francisco, United States, 15/02/16. https://doi.org/10.1117/12.2214786

Integrating III-V, Si, and polymer waveguides for optical interconnects : RAPIDO. / Aalto, Timo; Harjanne, Mikko; Offrein, Bert Jan; Caër, Charles; Neumeyr, Christian; Malacarne, Antonio; Guina, Mircea; Sheehan, Robert N.; Peters, Frank H.; Melanen, Petri.

Optical Interconnects XVI. International Society for Optics and Photonics SPIE, 2016. 97530D (Proceedings of SPIE, Vol. 9753).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AU - Offrein, Bert Jan

AU - Caër, Charles

AU - Neumeyr, Christian

AU - Malacarne, Antonio

AU - Guina, Mircea

AU - Sheehan, Robert N.

AU - Peters, Frank H.

AU - Melanen, Petri

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N2 - We present a vision for the hybrid integration of advanced transceivers at 1.3 μm wavelength, and the progress done towards this vision in the EU-funded RAPIDO project. The final goal of the project is to make five demonstrators that show the feasibility of the proposed concepts to make optical interconnects and packet-switched optical networks that are scalable to Pb/s systems in data centers and high performance computing. Simplest transceivers are to be made by combining directly modulated InP VCSELs with 12 μm SOI multiplexers to launch, for example, 200 Gbps data into a single polymer waveguide with 4 channels to connect processors on a single line card. For more advanced transceivers we develop novel dilute nitride amplifiers and modulators that are expected to be more power-efficient and temperatureinsensitive than InP devices. These edge-emitting III-V chips are flip-chip bonded on 3 μm SOI chips that also have polarization and temperature independent multiplexers and low-loss coupling to the 12 μm SOI interposers, enabling to launch up to 640 Gbps data into a standard single mode (SM) fiber. In this paper we present a number of experimental results, including low-loss multiplexers on SOI, zero-birefringence Si waveguides, micron-scale mirrors and bends with 0.1 dB loss, direct modulation of VCSELs up to 40 Gbps, ±0.25μm length control for dilute nitride SOA, strong band edge shifts in dilute nitride EAMs and SM polymer waveguides with 0.4 dB/cm loss.

AB - We present a vision for the hybrid integration of advanced transceivers at 1.3 μm wavelength, and the progress done towards this vision in the EU-funded RAPIDO project. The final goal of the project is to make five demonstrators that show the feasibility of the proposed concepts to make optical interconnects and packet-switched optical networks that are scalable to Pb/s systems in data centers and high performance computing. Simplest transceivers are to be made by combining directly modulated InP VCSELs with 12 μm SOI multiplexers to launch, for example, 200 Gbps data into a single polymer waveguide with 4 channels to connect processors on a single line card. For more advanced transceivers we develop novel dilute nitride amplifiers and modulators that are expected to be more power-efficient and temperatureinsensitive than InP devices. These edge-emitting III-V chips are flip-chip bonded on 3 μm SOI chips that also have polarization and temperature independent multiplexers and low-loss coupling to the 12 μm SOI interposers, enabling to launch up to 640 Gbps data into a standard single mode (SM) fiber. In this paper we present a number of experimental results, including low-loss multiplexers on SOI, zero-birefringence Si waveguides, micron-scale mirrors and bends with 0.1 dB loss, direct modulation of VCSELs up to 40 Gbps, ±0.25μm length control for dilute nitride SOA, strong band edge shifts in dilute nitride EAMs and SM polymer waveguides with 0.4 dB/cm loss.

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KW - hybrid integration

KW - optical interconnect

KW - optical interposer

KW - optoelectronics

KW - polymer photonics

KW - semiconductor optical amplifier

KW - Silicon photonics

KW - VCSEL

KW - wavelength multiplexers

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ER -

Aalto T, Harjanne M, Offrein BJ, Caër C, Neumeyr C, Malacarne A et al. Integrating III-V, Si, and polymer waveguides for optical interconnects: RAPIDO. In Optical Interconnects XVI. International Society for Optics and Photonics SPIE. 2016. 97530D. (Proceedings of SPIE, Vol. 9753). https://doi.org/10.1117/12.2214786